• Polymer(Korea)
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• v.25 no.5
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• pp.642-648
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• 2001

An attempt was made to synthesize an ammonia adsorbent by the photo-induced grafting of styrene (St) onto polypropylene (PP) nonwoven using benzoin ethyl ether (BEE) as a photosensitizer with urea and trimethylol propane triacrylate in methanol medium. As styrene concentration was increased, the graft yield was increased. It was also found that the graft yield increased with reaction time. The polypropylene grafted with styrene (PP-g-St) was sulfonated by chlorosulfonic acid in dichloroethane and complexed with several metal ion, such as $cO^{+2}$, $nI^{+2}$, $cU^{+2}$, $Zn^{+2}$. The amount of ammonia gas adsorbed by these sample was dependent on the degree of sulfonation, adsorption time, and ammonia gas pressure. The adsorption capacity of ammonia gas by the sulfonated PP-g-St(SPP-g-St) nonwoven with 4. 25 mmol $H^+$/g was 6.61 mmol/g. Metal ion complexed SPP-g-St nonwovens had higher adsorption capacity than SPP-g-St nonwoven and the $Co^{+2}$ complexed SPP-g-St showed 9.90 mmol $NH_3$/g, which was much higher than that of active carbon or silica gel.

• Journal of the Korean Chemical Society
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• v.57 no.3
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• pp.341-351
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• 2013

Zn(II), Cd(II) and Hg(II) complexes with a general composition[$M(L)_2(X)_2$], where L=4-aminopyridine (4AP) and $X=NO_2{^-}$ were prepared under microwave irradiation. The metal complexes were characterized by elemental analyses, molar conductance, IR, Far-IR, electronic, NMR ($^1H$, $^{13}C$), XPS spectral and thermal studies. The spectroscopic studies reveal the composition, different modes of bonding, electronic transition, different chemical environment of C and H atoms and the electronic state of the metal atoms. On the basis of the characterization data, tetrahedral geometry is suggested for all the complexes. The free ligand (4-aminopyridine) and their metal complexes were screened against phytopathogenic fungi and bacteria in vitro and the activities were compared.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.456-456
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• 2013

We report the modifications in the electronic structureof ZnO thin films induced by swift heavy ion (SHI) irradiated ZnO thin films by using near edge X-ray absorption fine structure (NEXAFS) spectroscopy at O K-edge was performed at BL10D XAS-KIST beamline at Pohang Accelerator Lab (PAL). ZnO films of 250 nm thickness oriented in [200] plane deposited by RF magnetron sputtering using equal $Ar:O_2$ atmosphere and air annealed at $500^{\circ}C$ for 6 hours for stability were irradiated with 120 MeV Au and 100 MeV O beams separately with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$. High Resolution X-ray diffraction and NEXAFS analysis indicates significant changes in the electronic structure and the SHI effect is different for Ag and O-beams. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization. The NEXAFS results will be presented in detail.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.4 no.4
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• pp.345-352
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• 2006

The cemented and paraffin wastes form which are incorporated the concentrated wastes, the cemented waste form which is incorporated the spent ion-exchange resins, and the miscellaneous waste(decontamination paper) were irradiated up to $10^{+8}$ rads at $5.43{\times}10^{+5}$ rads/hr with Co-60(72,023.9 Ci) as an external irradiation source. As a result, the radiolysis gases such as $H_2,\;CH_4,\;N_2,\;C_2H_6,\;O_2,\;CO\;and\;CO_2$, were measured in all the wastes. The major gas which was generated in all the wastes was hydrogen($H_2$). The volume of the generated gases showed a difference from $0.029{\sim}0.788\;cm^3.atm/1.1g$ according to the type of wastes, and more was generated in the cemented waste form incorporated a spent ion-exchange resin than in the other wastes. More hydrogen($H_2$) gas was generated in the decontamination paper waste than in the other wastes, and the G($H_2$) value was 0.12.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.43-46
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• 2000

$H_4Nb_6/O_{17}$/CdS nanocomposites which intercalated CdS particles, less than 0.8nm thickness, in the interlayer of $H_4Nb_6/O_{17}$ were prepared by the successive ion exchange reactions of $H_4Nb_6/O_{17}$ with $Cd^{2+}$ and $C_3H_7NH_3_+$, followed by the reaction with $H_2S$ gas. $H_4Nb_6/O_{17}$/CdS photocatalytically reduced $NO_3$￣ to $NO_2$￣ and $NH_3$in the presence of sacrificial hole acceptor such as methanol under visible light irradiation (wavelength>400nm), although unsupported CdS showed no noticeable photocatalytic activity for $NO_3$￣ reduction. The catalytic activity of $H_4Nb_6/O_{17}$/CdS greatly enhanced with co-doping of Pt particles in the interlayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.62-65
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• 2005

We studied the nematic liquid crystal (NLC) alignment capability by the Ultraviolet (UV) alignment method on a-C:H thin-films, and investigated electro-optical performances of the UV aligned twisted nematic (TN)-liquid crystal display (LCD) with the UV exposure on a-C:H thin film surface. A good LC alignment by UV irradiation on a-C:H thin-film surfaces was achieved. Monodomain alignment of the UV aligned TN-LCD can be observed. The good electro-optical (EO) characteristics of the UV aligned TN-LCD was observed with oblique UV exposure on the a-C:H thin film surface for 1min.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.97-102
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• 2006

Anodic alumina with self-organized and ordered nano hole arrays can be a good candidate of an irradiation mask to modify the properties of nano-scale region. In order to try using porous anodic alumina as a mask for ion-beam patterning, ion beam transmittance of anodic alumina was tested. 4 Um thick self-standing AAO templates anodized from Al bulk foil with two different aspect ratio, 200:1 and 100:1, were aligned about incident ion beam with finely controllable goniometer. At the best alignment, the transmittance of the AAO with aspect ratio of 200:1 and 100:1 were $10^{-8}\;and\;10^{-4}$, respectively. However transmittance of the thin film AAO with low aspect ratio, 5:1, were remarkably improved to 0.67. The ion beam transmittance of self-standing porous alumina with a thickness larger than $4{\mu}m$ is extremely low owing to high aspect ratio of nano hole and charging effect, even at a precise beam alignment to the direction of nano hole. $SiO_2$ nano dot array was formed by ion irradiation into thin film AAO on $SiO_2$ film. This was confirmed by scanning electron microscopy that the $SiO_2$ nano dot array is similar to AAO hole array.

• Journal of the Korean institute of surface engineering
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• v.38 no.2
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• pp.65-68
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• 2005

The effect of crystal orientation and microstructure on the mechanical properties of $TaN_x$ was investigated. $TaN_x$ films were grown on $SiO_2$ substrates by ultrahigh vacuum unbalanced magnetron sputter deposition in mixed $Ar/N_2$ discharges at 20 mTorr (2.67 Pa) and at $350^{\circ}C$. Unlike the Ti-N system, in which TiN is the terminal phase, a large number of N-rich phases in the Ta-N system could lead to layers which had nano-sized lamella structure of coherent cubic and hexagonal phases, with a correct choice of nitrogen fraction in the sputtering mixture and ion irradiation energy during growth. The preferred orientations and the micro-structure of $TaN_x$ layers were controlled by varing incident ion energy $E_i\;(=30eV\~50eV)$ and nitrogen fractions $f_{N2}\;(=0.1\~0.15)$. $TaN_x$ layers were grown on (0002)-Ti underlayer as a crystallographic template in order to relieve the stress on the films. The structure of the $TaN_x$ film transformed from Bl-NaCl $\delta-TaN_x$ to lamellar structured Bl-NaCl $\delta-TaN_x$ + hexagonal $\varepsilon-TaN_x$ or Bl-NaCl $\delta-TaN_x$ + hexagonal $\gamma-TaN_x$ with increasing the ion energy at the same nitrogen fraction $f_{N2}$. The hardness of the films also increased by the structural change. At the nitrogen fraction of $0.1\~0.125$, the structure of the $TaN_x$ films was changed from $\delta-TaN_x\;+\;\varepsilon-TaN_x\;to\;\delta-TaN_x\;+\;\gamma-TaN_x$ with increasing the ion energy. However, at the nitrogen fraction of 0.15 the film structure did not change from $\delta-TaN_x\;+\;\varepsilon-TaN_x$ over the whole range of the applied ion energy. The hardness increased significantly from 21.1 GPa to 45.5 GPa with increasing the ion energy.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.158-158
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• 2003

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.518-521
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• 2003

Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_{n}$O$_{x}$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of 1~9 $\times$ 10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.grown.