• Journal of Magnetics
• /
• v.21 no.1
• /
• pp.35-39
• /
• 2016

$Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.21 no.2
• /
• pp.276-282
• /
• 2012

This study looked for Mode status of each for fatigue crack growth behavior about the repeat load of mode I and the static load of mode II. The experiment was performed in the state of the repetition frequency of the sine wave 10Hz, the stress ratio 0.1, maximum load 300kg.f, a static load 0, 100, 200, 300kg.f, As the experimental results, in mode of static load, while the load value increases, the crack growth rate is slower as the energy of a crack mixing grows. Mode I and the power mode II get an influence each other in the direction of crack propagation path, but as they eventually get closer to the breaking point of the crack growth, it is dominated by the mode I.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.06a
• /
• pp.165-167
• /
• 1998

Nd:YAG crystals were grown by Horizontal Bridgman method. The effects of sliding rate (growth rate) of Molydbenum container, growth atmosphere and concentration of Neodymium ions on crystal qualities were investigated. The size of the crystals grown was up to 150-200 mm in length, 70 mm in width and 25-35 mm in thickness. Crystals grown under the optimum conditions were violet, transparent and could not be observed any macroscopic defects. Under the polarizing microscopoc observations with crossed polar, striations, {211} facets and inclusions were detected. With the grown crystals, prototypes of laser rods for 1.06$\mu$m laser application were manufactured and then characterized. As a result, we can get high quality of Nd:YAG laser rods with <111> and <110> axis, 63 mm in length and6.3 mm in diameter.

• Progress in Superconductivity and Cryogenics
• /
• v.19 no.3
• /
• pp.33-39
• /
• 2017

This study presents that the orientation and the geometry of seed affect on the growth behavior of melt processed single grain REBCO bulk superconductor and its magnetic properties. The effects of seed geometry have been investigated for thin $30mm{\times}30mm$ rectangular powder compacts. Single grain REBCO bulk superconductors have been grown successfully by a top seed melt growth method for 8-mm thick vertical thin REBCO slab. Asymmetric structures have been developed at the front surface and at the rear surface of the specimen. Higher magnetic properties have been obtained for the specimen that c-axis is normal to the specimen surface. The relationships between microstructure, grain growth and magnetic properties have been discussed.

• Journal of Yeungnam Medical Science
• /
• v.37 no.2
• /
• pp.73-78
• /
• 2020

Cancer incidence has been increasing steadily and is the leading cause of mortality worldwide. Gastric cancer is still most common malignancy in Korea. Cancer initiation and progression are multistep processes involving various growth factors and their ligands. Among these growth factors, we have studied hepatocyte growth factor (HGF), which is associated with cell proliferation and invasion, leading to cancer and metastasis, especially in gastric cancer. We explored the intercellular communication between HGF and other surface membrane receptors in gastric cancer cell lines. Using complimentary deoxyribonucleic acid microarray technology, we found new genes associated with HGF in the stomach cancer cell lines, NUGC-3 and MKN-28, and identified their function within the HGF pathway. The HGF/N-methyl-N'-nitroso-guanidine human osteosarcoma transforming gene (c-MET) axis interacts with several molecules including E-cadherin, urokinase plasminogen activator, KiSS-1, Jun B, and lipocalin-2. This pathway may affect cell invasion and metastasis or cell apoptosis and is therefore associated with tumorigenesis and metastasis in gastric cancer.

• Journal of the Korean Vacuum Society
• /
• v.12 no.4
• /
• pp.214-217
• /
• 2003

In this study, we prepared ZnO thin film on $SiO_2$/Si substrate by FTS (Facing Targets Sputtering) apparatus which can reduce damage on the thin film because the bombardment of high-energy Particles such as ${\gamma}$-electron can be restrained. And, properties of thin filnl grown with ZnO buffer-layer which can be suppress initial growth layer was investigated. The crystalline and the c-axis preferred orientation of ZnO thin film was also investigated by XRD. As a result, we noticed that the ZnO thin film has a good crystallographic characteristic at thickness of ZnO buffer layer 10, 20 nm and working pressure 1 mTorr.

• Korean Journal of Crystallography
• /
• v.14 no.2
• /
• pp.93-104
• /
• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.26 no.2
• /
• pp.58-61
• /
• 2016

Bulk GaN crystals were grown by the basic ammonothermal method. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. The growth conditions are at temperatures from $500{\sim}600^{\circ}C$ and pressures from 2~3 kbar. The growth rate for the c-axis was increased with increasing the operating pressure. Average dislocation density was measured $1{\times}10^5/cm^2$ by the cathodoluminescence measurement. The full-width at half-maximum of the X-ray diffraction rocking curve for (002) reflection was approximately 270 arcsec for Ga face and 80 arcsec for N face.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.2
• /
• pp.51-55
• /
• 2015

The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.

• Korean Journal of Materials Research
• /
• v.17 no.6
• /
• pp.303-307
• /
• 2007

ZnO thin films were prepared by pulsed laser deposition on amorphous fused silica substrates at different ambient $O_2$ pressures varying from 0.5 to 500 mTorr, to observe the effect of ambient gas on their crystalline structure, morphology and optical properties. Results of X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence studies showed that crystallinity, surface features and optical properties of the films significantly depended on the oxygen background pressure during growth. A low oxygen pressure (0.5 mTorr) seems to be suitable for the growth of highly c-axis oriented and smoother films possessing a superior luminescent property. The films grown at the higher $O_2$ pressures (50-500 mTorr) were found to have many defects probably due to an excessive incorporation of oxygen into ZnO lattice. We speculate that the film crystallinity could be affected by the kinetics of atomic arrangement during deposition at the higher oxygen pressures.