• 한국세라믹학회지
• /
• 제41권1호
• /
• pp.1-8
• /
• 2004

The microstructural features and mechanical behavior of directionally solidified $(Y_2O_3)ZrO_2/Al_2O_3$ eutectic fibers after extended beat treatment in oxidizing environment were investigated. The fiber was grown continuously by an Edge-defined Film-fed Growth (EFG) technique. The microstructure was characterized using X-Ray Diffraction (XRD) and Scanning Electron Microscopy(SEM). The microstructure of the fiber in the as-fabricated state consists of highly oriented colonv and fine lamellar microstructure along the fiber axis. Tensile strength of the $(Y_2O_3)ZrO_2/Al_2O_3$ eutectic fiber remained unchanged with heat treatment at temperatures between $1200^{\circ}C$ and $1500^{\circ}C$ up to 300h. The weibulls modulus remained fairly constant after extended thermal exposure. The fracture toughness and crack propagation behavior were investigated. The fracture toughness ($K_{1C}$) of the $(Y_2O_3)ZrO_2/Al_2O_3$ eutectic fiber in the as-fabricated state were measured to be 3.6 ${\pm}$ 0.5 MPa${\cdot}m^{1/2}$ by an indentation technique and 2.2 ${\pm}$ 0.2 MPa${\cdot}m^{1/2}$ by assuming elliptical flaw of a semi-infinite solid, respectively. The $(Y_2O_3)ZrO_2/Al_2O_3$ eutectic fiber showed a radial (Palmqvist) crack type and exhibited an orthotropic crack growth behavior under 100 g load.

• 한국진공학회지
• /
• 제4권1호
• /
• pp.40-45
• /
• 1995

직경 2인치의 YBa2Cu3O7-y 타겟을 사용하여 높은 스퍼터링 기체 압력 하에서 off-axis DC-마그네트론 스퍼터링 방법으로 MgO(100) 단결정 기판 위에 YBa2Cu3O7-y 박막을 c축 방향으로 in-냐셔 성장시킬 때 기판의 접지 여부와 인가전류의 양이 박막 성장에 미치는 여향을 연구하였다. 그 결과 접지 여부는 박막의 초전도 변환온도, 전기수송 특성, 결정 구조적 특성에는 영향을 거의 주지 않는 반면 표면상태에는 상당한 영향을 미치며, 인가전류의 양은 초전도 특성에 많은 영향을 미침을 발견하였다. 기판온도 $670^{\circ}C$, 스퍼터링 기체압력 300mTorr, 아르곤 대 산소 분압비 5:1의 조건에서 인가전류의 최적량은 300-500 mA이었으며 평균 박막 성장속도는 $0.11-0.14AA$/s로 매우 낮았다. 기판의 접지 효과와 낮은 성장속도의 원인에 대해 고찰해 본다.

• 한국항해항만학회:학술대회논문집
• /
• 한국항해항만학회 2000년도 추계학술대회논문집
• /
• pp.97-100
• /
• 2000

Si$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

• Korean Chemical Engineering Research
• /
• 제44권3호
• /
• pp.243-247
• /
• 2006

Anodic alumina(Anodisc)를 지지체로 사용하여 MFI 제올라이트 박막을 제조하였다. 먼저 화학결합을 이용하여 지지체에다 silicalite-1 종자 결정(c-축 길이 $1.2{\mu}m$)을 결합시켰고, 제올라이트 단층막으로 덮인 지지체 위에 이차성장 수열합성법을 사용하여 결정들이 a-축과 b-축으로만 배향된 제올라이트 박막을 형성하였다. 제조된 박막은 주사형 전자현미경으로 관찰하였고, X-ray 회절로 분석하였다.

• 한국전기전자재료학회논문지
• /
• 제14권10호
• /
• pp.855-860
• /
• 2001

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

• 한국전기전자재료학회논문지
• /
• 제23권5호
• /
• pp.424-428
• /
• 2010

This paper describes the design and analysis of AlN piezoelectric micro energy harvester. The harvester was designed to convert ambient vibration energy to electrical power as a AlN piezoelectric material compatible with CMOS (complementary metal oxide semiconductor) process. To cut off the leakage current, AlN was used as the insulating layer. Also, Mo was used for the excellent c-axis crystal growth as the bottom electrode. The AlN harvester which it has the low operating frequency was designed by using the ANSYS FEA (finite element analysis). From the simulation results, the resonance frequency of designed model is about 360 Hz and analyzed the bending mode, displacement and expectation output.

• 한국세라믹학회지
• /
• 제27권2호
• /
• pp.249-255
• /
• 1990

High Tc Supperconducting thin films were fabricated by rf magnetron sputtering method. We have successfully controlled the compositions of films by adding sintered CuO pellets on YBa2Cu3O7-x single target. High Tc thin films with large grian size and good crystal habit were obtained by rapid thermal annealing process. The films deposited on SrTiO3(100) single crystal substrate indicated the existence of c-axis prefered orientation confirmed by XRD and SEM analysis. The Tc, zero's of sharp resistive transition for rapid annealed films deposited on polycrystalline YSZ substrate and on SrTiO3(100) single crystal substrate were 79K and 88K, respectively.

• 한국세라믹학회지
• /
• 제43권4호
• /
• pp.230-234
• /
• 2006

Metal-Induced Crystallization (MIC) of amorphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after Aluminum-Induced Crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
• /
• pp.1095-1096
• /
• 2006

When $Y_2O_3$ was added to Ti-excess $BaTiO_3$ ((Ba+Y)/Ti =1), the area occupied by $Y^{3+}$ ion was confirmed by its microstructure development, electrical conductivity behavior and lattice constant. Grain growth inhibition was observed when the content of donor dopant exceeded a critical value ($x{\approx}.0.01$) in $BaTiO_3+x(0.5Y_2O_3+TiO_2)$ system. A donor-doped behavior was observed at various Y contents ($0.2\sim3.0$ mol% Y) when $Y_2O_3$ was added to $TiO_2$-excess $BaTiO_3$. As Y content was increased, (002) and (200) peaks shifted to higher angles and the lattice constant (a and c axis) decreased gradually.

• Journal of information and communication convergence engineering
• /
• 제5권3호
• /
• pp.219-222
• /
• 2007

Highly conductive and transparent aluminum doped ZnO thin films (AZO) films have been prepared by r.f. magnetron sputtering processes on poly carbonate (PC) and onto glass as reference. In addition, the electrical, optical properties of the films prepared at various sputtering powers were investigated. The XRD measurements revealed that all of the obtained films were polycrystalline with the hexagonal structure and had a preferred orientation with the c-axis perpendicular to the substrate. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with the resistivity as low as $9.7{\times}10^{-4}\;{\Omega}-cm$ and transmittance over 90% have been obtained by suitably controlling the r.f. power.