• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.160-161
• /
• 2006

To Improve the mean-life and the reliability of power cable, we have investigated thermal conductivity of XLPE insulator and semiconducting materials in l54[kV] underground power transmission cable. Specimens were made of sheet form with the nine of specimens for measurement. Thermal conductivity were measured by Nano Flash Diffusivity thermal conductivity measurement temperature ranges of XLPE insulator were from 20[$^{\circ}C$] to 90[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/mm]. In case of semiconducting materials. the measurement temperature ranges of thermal conductivity were from 20[$^{\circ}C$] to 60[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min].

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.773-777
• /
• 2002

In this study, we analyzed the LPG and LNG sensitivity measurement and voltage variation using catalytic type gas sensor characteristics in catalytic combustion type gas detecter sensors. gas detector shall operate as intended when exposed for 24 hours to air having a relative humidity of 0~85 percent at a temperature of $20[{\mu}m]$ and humidity of 45 percent at a temperature of $-10{\sim}40[^{\circ}C]$ the gas detecter sensors are to be subjected to operation for 210 days in an area that has been detemined to be equivalent to a typical residential atmosphere with an air velocity of 50 [cm/sec]. The source of energy for a gas detector sensors employing a supplementary basic circuit is energized from a separate source of supply direct applied voltage 2.1[V], 2.2[V], 2.3[V]. As a result, it was confirmed that the relative humidity and temperature by regression each analysis, compared to the LPG characteristic graph and methane characteristics graph by a relative humidity of 0 ~ 85 [%] at a temperature range of $-10{\sim}40[^{\circ}C]$ show a similar linear pattern on the whore.

• 전기학회논문지
• /
• 제63권10호
• /
• pp.1461-1466
• /
• 2014

GIS(Gas Insulated Switchgear) is important power apparatus which have strong dielectric strength, supply electric power and is a part of the power system. Most substation type is configured as GIS. Recently, because of continuous increasement of GIS demand resulted from high quality & big capacity of electric power, the necessity of the preventive & diagnosis system is being expanded gradually. GIS partial discharge occurred on the UHF band is detected effectively by the method to IEC 60270 that recommend to be able to detect the apparent minimum discharge, 5 pC. Additionally, the UHF sensor should be installed to detect PD signal if Partial discharge signal, 5 pC occur in every part of GIS. Currently PD diagnosis system applying UHF sensor for GIS with various voltage level like 154 kV, 345 kV, 765 kV have been operated. And it is necessary to measure and analyze insulation breakdown phenomenon of inside GIS exactly. In this paper, we proposed Fat-dipole patch UHF sensor that is developed and more sensitive, excellent wide-range characteristic than the exising UHF sensor. And we performed KERI (Korea Electrotechnology Research Institute) reference test, which showed the excellent result for the all tests.

• 한국방사선학회논문지
• /
• 제3권4호
• /
• pp.23-28
• /
• 2009

단색 엑스선은 적은 방사선 피폭으로 대조도가 높은 의료영상을 만들 수 있다. 엑스선 튜브와 다층박막 거울을 결합하면 높은 플루언스의 단색 엑스선을 얻을 수 있다. 몰리브덴(Mo) 타깃을 갖는 엑스선 튜브에서 Mo 특성방사선(17.5keV)을 높은 반사율로 획득하기 위한 W/C 다층박막 거울의 최적화를 수행하였다. 반사율이 최대가 되는 조건에서 두께주기와 두께비를 결정하였다. 최적 설계된 다층박막 거울에 대한 두께주기와 브래그 정렬에 대한 공차를 구하였다. 증착(deposition) 공차 0.2nm와 회전정렬 공차 ${\pm}0.01^{\circ}$에서 이론 반사율의 85% 이상에 해당하는 반사율이 얻어질 수 있다. 다층박막 거울을 이용하면 높은 플루언스의 특성방사선을 얻어 낼 수 있기 때문에 의료영상 획득 장치에 많이 사용될 것이다.

• 전기학회논문지P
• /
• 제57권2호
• /
• pp.140-145
• /
• 2008

The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, ${\beta}-PVF_2$) organic thin films using the vapor deposition method. Vapor deposition was performed under the following conditions: the temperature of evaporator, the applied electric field, and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm, and $2.0{\times}10^{-5}\;Torr$, respectively. The molecular structure of the evaporated organic thin films were evaluated by a FT-IR. The results showed that the characteristic absorption peaks of $\beta$-form crystal increase from 72% to 95.5% with an increase in the substrate temperature. In the analysis of the electric characteristics, the abnormal increases in the relative dielectric constant and the dielectric loss factor in the regions of low frequency and high temperature are known to be caused by inclusion of impurity carriers in the PVDF organic thin films. In order to analyze quantitatively the abnormalities in the conductivity mechanism caused by ionic impurities, the product of the ion density and the mobility that affect the electrical property in polymeric insulators is analyzed. In the case of a specimen produced by varying the substrate temperature from $30^{\circ}C$ to $105^{\circ}C$, the product of mobility and the ion density decreased from $4.626{\times}10^8$ to $8.47{\times}10^7/V{\cdot}cm{\cdot}s$. This result suggests that the higher the substrate temperature is maintained, the better excluded the impurities are, and the more electrically stable material can be obtained.

• 한국전기전자재료학회논문지
• /
• 제14권7호
• /
• pp.567-571
• /
• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• 반도체디스플레이기술학회지
• /
• 제14권1호
• /
• pp.27-30
• /
• 2015

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

• 한국수소및신에너지학회논문집
• /
• 제28권6호
• /
• pp.657-662
• /
• 2017

This paper presents the reversible electrolysis characteristics of a solid oxide fuel cell (SOFC) using a $10{\times}10cm^2$ anode supported planar cell with an active area of $81cm^2$. In this work, current-voltage characteristic test and reversible electrolysis cycle test were carried out sequentially for 2,114 hours at a furnace temperature of $700^{\circ}C$. The current-voltage characteristics for reversible electrolysis mode was measured at a current of ${\pm}26.7A$ under various $H_2O$ utilization conditions. The reversible electrolysis cycle was performed 50 times at a current of ${\pm}32.4A$. As a result, The performance degradation of SOEC mode was larger than that of SOFC mode.

• 한국세라믹학회지
• /
• 제32권11호
• /
• pp.1262-1268
• /
• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• 한국산학기술학회논문지
• /
• 제14권10호
• /
• pp.4672-4678
• /
• 2013

알루미늄 금속이 용해될 시 대기와 접촉한 용탕 표면에서 생성되는 알루미늄 드로스는 알루미늄 생산 공정에서 발생되는 필수적인 부산물이다. 그러나 알루미늄 드로스의 대부분은 매립에 의한 처리가 이루어지고 있어 환경오염의 원인이 되고 있다. 본 연구에서는 알루미늄 드로스를 재자원화 하여 SCR(Selective Catalytic Reduction) 촉매의 담체에 일부 대체하는 연구를 진행하였다. 재활용 된 알루미늄 드로스를 촉매 원료 $WO_3$, $V_2O_5$, $TiO_2$와 혼합하여 $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR촉매를 제조하였다. 제조 된 $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR촉매는 XRD, XRF, BET 분석을 통해 특성평가를 진행 하였으며, 내구성 평가를 통해 $Al_2O_3$ 함량이 증가할수록 V$V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR촉매의 강도가 증가하는 것을 확인 할 수 있었다. MR(Micro-Reactor)을 이용한 촉매 활성평가를 진행하여 촉매의 실사용 온도 $350^{\circ}C{\sim}400^{\circ}C$에서 90%이상의 촉매효율을 나타내었다.