• Journal of the Korean Ceramic Society
• /
• v.37 no.12
• /
• pp.1150-1158
• /
• 2000

반도성 SrTiO$_3$분말을 이용하여 상압에서 제조된 소결체의 소결 분위기에 따른 소결체 입계의 결함 화학 및 전기적 특성을 고찰하였다. 소결 분위기를 질소-수소, 질소, 공기로 변화시킴에 따라서 입계에서 O/(Sr+Ti)의 비는 1.6로부터 2.1로 증가하였으며, 또한 입계의 과잉 음전하층에서 전하 밀도는 1C/$ extrm{cm}^2$로부터 1.26C/$\textrm{cm}^2$로 증가하였다. 소결체의 문턱 전압, 입계 저항 그리고 입계 전위 장벽은 소결 분위기를 질소-수소로부터 공기로 변화시킴에 따라 6.40-1000 V/cm, 2.70-3050 kΩ 그리고 0.08-10.9 eV로 각각 증가하였다.

• Proceedings of the KSR Conference
• /
• 2008.06a
• /
• pp.1887-1891
• /
• 2008

In this paper, we dealt with a partial discharge (PD) measurement method that has been accepted as an effective and non-destructive technique to estimate insulation performance of low-voltage induction motors. The PD measurement system consists of a coupling network, a low noise amplifier, and associated electronics. A shielded box was used to reduce environmental noise. Frequency characteristic of the coupling network was estimated by a sinusoidal signal input, and the low cut-off frequency of the coupling network was 1 MHz (-3 dB). Also, we carried out a calibration test for the PD measurement system. Sensitivity of the system was of 84 m$V_{max}$/pC between stator winding and enclosure. In application test on a low-voltage three phase induction motor (5 HP), we could detect 88 pC at AC 800 $V_{max}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.388-388
• /
• 2013

현대 사회에서 고집적 및 고성능의 전자소자의 필요성은 지속적으로 요구되고 있으며, 투명하거나 플렉서블한 특성의 필요성에 따라 이에 대한 기술개발이 이루어지고 있다. 특히, 이러한 특성을 만족하면서 대면적화 및 저온 공정의 특성을 지니는 유기물 반도체가 주목받고 있고, 이를 이용하여 OLED (Organic Light Emitting Diode), OTFT (Organic Thin Film Transistor)와 같은 다양한 유기물 반도체 소자가 개발되고 있다. 대표적인 예로는이 있다. 유기물 반도체 소자의 특성을 이용한 메모리 소자 또한 연구 및 개발이 지속되고 있으며, 유연성과 낮은 공정가격 등의 특성을 가지는 나노 입자들이 기존 Floating Gate의 대체물로 각광받고 있다. 본 논문에서는 MIS (Metal/Insulator/Semiconductor) 구조를 제작하고, Insulator 내부에Core/Shell 구조를 가지는 CdSe/ZnS 나노 입자를 부착하여 메모리 소자의 특성 확인 및 단위 면적당 개수에 따른 특성 변화를 확인하고자 하였다. 합성된 PVP (Poly 4-Vinyl Phenol)를 Insulator 층으로 사용하였으며 단위 면적당 나노 입자의 개수를 조절하여 제작된 MIS 소자를 Capacitance versus Voltage (C-V) 측정을 통하여 변화특성을 확인하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.6
• /
• pp.24-33
• /
• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

• Proceedings of the KIEE Conference
• /
• 2001.07e
• /
• pp.35-39
• /
• 2001

The purpose of this paper is improvement the piezoelectric of Polyvinylidene fluoride(PVDF) organic thin films is fabricated by vapor deposition method. The piezoelectric of PVDF organic thin films attributed to dipole orientation in crystalline region. Also, the piezoelectric characteristic reduced that dipole moments orientation in crystalline region interfered with impurity carriers. Therefore, PVDF organic thin films fabricated with high substrate temperature condition for crystallinity improvement. The crystallinity of PVDF organic thin films fabricated by this condition increase from 47 to 67.8%. The ion density of PVDF organic thin films fabricated by substrate temperature variation from $30^{\circ}C$ to $105^{\circ}C$ decreased from $1.62{\times}10^{16}cm^3$ to $6.75{\times}10^{11}cm^3$ when temperature and frequency were $100^{\circ}C$, 10Hz, respectively. The $d_{33}$ and piezo-voltage coefficient of PVDF organic thin films increased from 20pPC/N to 33pC/N and $162.9{\times}10^{-3}V{\cdot}m/N$ to $283.2{\times}10^{-3}V{\cdot}m/N$, respectively. For the sake of the applications of piezoelectric sensor, we analyzed the output voltage characteristic as a function of the distance between an oscillator of 28kHz and PVDF organic thin film transducer. From this, we found that the output voltage is inversely proportional to the distance. At this time, the period was about $35.798{\mu}s$ and equal the oscillator frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.566-569
• /
• 2001

In this paper, we investigated the electrical characteristics through DC power at manufacturing the MIS capacitor insulator AIN thin film based on reactive sputtering method. In case of deposition temperature 250$^{\circ}C$, pressure 5mTorr, total flow rate 8sccm(Ar:4sccm N2:4sccm), AIN thin film was deposited with changing DC power. As DC power increses, resistivity is observed a little increase. When AIN thin film is deposited at 100W, the result shows leakage current 10$\^$-8/A/$\textrm{cm}^2$ at 0.1MV/cm. Otherwise, In case of depositing at 150W and 200W, the result shows that the characteristic of leakage current is under 10$\^$-9//$\textrm{cm}^2$ at 0.1MV/cm. In C-V characteristic with DC power, deep depletion phenomenon is observed at inversion region in 100W and 150W. In 200W, that phenomenon, however, was showed to decrease. It shows that the hysterisis increases with being increasing DC power.

• Journal of the Semiconductor & Display Technology
• /
• v.7 no.2
• /
• pp.13-17
• /
• 2008

In this paper, in order to get the characteristics of the lithium secondary cell, such as charge and discharge characteristic, temperature characteristic, self-discharge characteristic and the capacity recovery rate etc, we build a thermal model that estimate the impedance of battery by experiment & simulation. In this one-dimensional model, Seven governing equations are made to solve seven variables c, $c_s,\;\Phi_1,\;\Phi_2,\;i_2$, j and T. The thermal model parameters used in this model have been adjusted according to the experimental data measured in the laboratory. The result(Voc, Impedance) of this research can be used in BMS(Battery Management System), so an efficient method of using battery is developed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.6
• /
• pp.371-374
• /
• 2015

This paper suggests a high performance lateral super barrier rectifier (Lateral SBR) device which has the advantages of both Schottky diode and pn junction, that is, low forward voltage and low leakage current, respectively. Advantage of the proposed lateral SBR is that it can be easily implemented and integrated in current BCD platform. As a result of simulation using TCAD, BVdss = 48 V, $V_F=0.38V$ @ $I_F=35mA$, T_j = $150^{\circ}C$ were obtained with very low leakage current characteristic of 3.25 uA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.218-220
• /
• 1996

A composite films were prepared by using Polyphenylenediamine(PPD) synthesized in our lab. and crystalline V$_2$O$_{5}$ in various mixture ratio for using positive active material of polymer film battery. The thermal stability of prepared composite film was carried out by using TGA. Electrical conductivity of composite film were also measured by using four-probe method in dry box. The thermal stability of prepared composite film is more than 35$0^{\circ}C$. The electrical conductivity of composite film increased and showed the highest value(about 23 S/cm) when doped at 0.4% LiCiO$_4$solution.n.

• Communications for Statistical Applications and Methods
• /
• v.18 no.3
• /
• pp.377-389
• /
• 2011

A higher quality level is generally perceived by customers as improved performance by assigning a correspondingly higher satisfaction score. The third generation index $C_{pmk}$ is more powerful than two useful indices $C_p$ and $C_{pk}$ that have been widely used in six sigma industries to assess process performance. In actual manufacturing industries, process capability analysis often entails characterizing or assessing processes or products based on more than one engineering specification or quality characteristic. Since these characteristics are related, it is a risky undertaking to represent the variation of even a univariate characteristic by a single index. Therefore, the desirability of using vector-valued process capability index(PCI) arises quite naturally. In this paper, we consider more powerful vector-valued process capability index $C_{pmk}$ = ($C_{pmkx}$, $C_{pmky}$)$^t$ that consider the univariate process capability index $C_{pmk}$. First, we examine the process capability index $C_{pmk}$ and plug-in estimator $\hat{C}_{pmk}$. In addition, we derive its asymptotic distribution and variance-covariance matrix $V_{pmk}$ for the vector valued process capability index $C_{pmk}$. Under the assumption of bivariate normal distribution, we study asymptotic confidence regions of our vector-valued process capability index $C_{pmk}$ = ($C_{pmkx}$, $C_{pmky}$)$^t$.