• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

• 대한전자공학회논문지SD
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• 제46권6호
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• pp.1-5
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• 2009

6H-SiC 전자 및 정공의 이온화계수로부터 유효이온화계수를 추출하여 6H-SiC PN 다이오드의 항복전압과 온-저항을 위한 해석적 표현식을 유도하였다. 해석적 모형으로부터 구한 항복전압을 $10^{15}{\sim}10^{18}\;cm^{-3}$의 도핑 농도 범위에서 실험 결과와 비교하여 10% 이내의 오차로 일치하였고, 농도 함수의 온-저항의 해석적 결과도 $5{\times}10^{15}{\sim}10^{16}\;cm^{-3}$의 범위에서 이미 발표된 수치적 결과와 매우 잘 일치하였다.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.603-609
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• 2008

Photoluminescence (PL) of neutron-irradiated GaN films and nanowires is investigated in this study. The GaN films and nanowires were irradiated by neutron beams in air at room temperature, and the neutron-irradiated films and nanowires were annealed in an atmosphere of $NH_3$ at temperatures ranging from 500 to $1100^{\circ}C$. The line-shapes of the PL spectra taken from the neutron-irradiated GaN films and nanowires were changed differently with increasing annealing temperature. In this study, light-emitting centers created in the neutron-irradiated GaN films and nanowires are examined and their origins are discussed. In addition, it is suggested here that the neutron-transmutation-doping is a simple and useful means of homogeneous impurity doping into nanowires with control of the doping concentration.

• Environmental Engineering Research
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• 제20권4호
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• pp.329-335
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• 2015

The effects of ion-doping on $TiO_2$ nanotubes were investigated to obtain the optimal catalyst for the effective decomposition of Rhodamine B (RB) through UV photocatalytic oxidation process. Changing the calcination temperature, which changed the weight fractions of the anatase phase, the average crystallite sizes, the BET surface area, and the energy band gap of the catalyst, affected the photocatalytic activity of the catalyst. The ionic radius, valence state, and configuration of the dopant also affected the photocatalytic activity. The photocatalytic activities of the catalysts on RB removal increased when $Ag^+$, $Al^{3+}$ and $Zn^{2+}$ were doped into the $TiO_2$ nanotubes, whereas such activities decreased as a result of $Mn^{2+}$ or $Ni^{2+}$ doping. In the presence of $Zn^{2+}$-doped $TiO_2$ nanotubes calcined at $550^{\circ}C$, the removal efficiency of RB within 50 min was 98.7%.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Journal of Ceramic Processing Research
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• 제23권5호
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• pp.566-569
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• 2022

In this paper, we have successfully prepared Al-doped Ni-rich LiNi0.91Co0.06Mn0.03O2 cathodes. The structural properties andelectrochemical performances are studied according to Al cationic doping. It can be confirmed that the crystallinity and cationdisordering of Ni-rich LiNi0.91Co0.06Mn0.03O2 were improved by Al doping. Based on such excellent structural quality, theelectrochemical performance of Al doping LiNi0.91Co0.06Mn0.03O2 was superior to that of pristine LiNi0.91Co0.06Mn0.03O2. The Aldoping Ni-rich NCM has an initial discharge capacity of 209.2 mAh g-1. In addition, it shows superior rate capability byshowing capacity retention of 58.5% under a high rate of 6.0 C. Therefore, it can be judged that Al doping LiNi0.91Co0.06Mn0.03O2can be applied to next-generation cathode for long-distance and fast-charging electric vehicles.

• 분석과학
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• 제8권3호
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• pp.229-236
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• 1995

생체시료에 존재하는 유리 아미노산의 분석을 위하여 pH 7.2의 완충용액 조건하에서 Amino Quant $C_{18}$ 컬럼에 diode array detector(DAD) 검출기가 부착된 HPLC에 의한 다단계 기울기 용리법이 사용되었다. 한국인 정신분열증 환자와 정상 한국인의 혈장시료내의 유리 아미노산은 3-mercaptopropionic acid 존재하에서 o-phthalaldehyde와 유도체 반응을 시켰다. 내부표준법에 의한 생체시료에서의 아미노산의 정량분석은 상대표준편차가 2~6%로서 재현성 있는 결과를 보여 주었다. 또한 한국인의 생체시료 중 아미노산의 함량은 외국인의 것과는 다른 결과를 얻었으며 정상인과 비정상인의 평균 tyrosine량은 큰 차이가 있었다.

• Journal of Magnetics
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• 제10권1호
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• pp.10-13
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• 2005

We have studied effects of the partial substitution of $La^{3+}$ for $A^{2+}$ on the magnetic properties of double perovskites $A_2FeMoO_6$ (A=Ca, Sr and Ba). Polycrystalline $A_{2-x}La_xFeMoO_6(0{\leq}x{\leq}0.2)$ samples have been prepared by the conventional solid-state reaction in a stream of 5% $H_2$/Ar gas. The x-ray data indicate that A=Ca is monoclinic with the space group P$2_1$/n, A=Sr is tetragonal with the space group I4/mmm, and A=Ba is cubic with the space group Fm3m. The substitution of $La^{3+}$ for $A^{2+}$ results in a cell volume increase for A=Ca and a cell volume reduction for A=Ba. The decrease of saturation magnetization with increasing x arises from the reduction of magnetic moment associated with the electron doping and the disorder at the Fe and Mo sites. The partial substitution of magnetic $La^{3+}$ for $A^{2+}$ considerably enhances the Curie temperature $T_c$ from 316 K for x = 0 to 334 K for x = 0.2. This enhancement of $T_c$ with $La^{3+}$ doping originates from electron doping effects in addition to ionic size ones.

• 한국세라믹학회지
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• 제49권6호
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• pp.659-662
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• 2012

Yttrium (Y) and niobium (Nb) doped spherical $Li_4Ti_5O_{12}$ were synthesized to improve the energy density and electrochemical properties of anode material. The synthesized crystal was $Li_4Ti_5O_{12}$, the particle size was less than $1{\mu}m$ and the morphology was spherical and well dispersed. The Y and Nb optimal doping amounts were 1 mol% and 0.5 mol%, respectively. The initial capacity of the dopant discharge and charge capacity were respectively 149mAh/g and 143 mAh/g and were significantly improved compared to the undoped condition at 129 mAh/g. Also, the capacity retention of 0.2 C/5 C was 74% for each was improved to 94% and 89%. It was consequently found that Y and Nb doping into the $Li_4Ti_5O_{12}$ matrix reduces the polarization and resistance of the solid electrolyte interface (SEI) layer during the electrochemical reaction.

• 멤브레인
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• 제16권4호
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• pp.276-285
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• 2006

술폰화 폴리아릴에테르벤즈이미다졸 공중합체를 $K_2CO_3$를 이용한 직접중합법으로 합성하고 인산도핑을 하여 고온운전 연료전지용 고분자전해질 막을 제조하였다. 최적의 전해질 막 제조를 위하여 술폰화도 $0{\sim}60%$ 및 도핑을 $0.7{\sim}5.7$의 범위에서 다양한 조성의 전해질 막 제조실험이 수행되었으며, 원자현미경분석 및 열중량분석, 수소 이온 전도도측정 등을 통해 전해질 막의 기본특성들을 평가하였다. 수소 이온 전도도는 도핑율에 따라 증가하는 것으로 나타났으며, $130^{\circ}C$의 비 가습환경에서 측정된 수소 이온 전도도는 도핑을 5.7의 전해질 막에서 최대 $7.3{\times}10^{-2}S/cm$의 값을 나타내었다.