• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.11
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• pp.12-17
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• 2009

This paper presents a tag emulator for a UHF band RFID system. The tag emulator supports the 1800-6C and EPC global class 1 generation 2 standards. The transmitted signal from a reader is generated using the PIE coding and ASK modulation methods. Signals of a tag are from the FM0 coding and ASK modulation methods. The ARM7 processor carries out the overall control of the system and signal analysis of incoming data. The verification of the tag emulator employs the application platform implemented in C++. Users can define parameter values for protocol during the application run. The tag emulator presented in this paper allows evaluating various design alternatives of the target RFID system in real applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.95-98
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• 2002

전력선 통신 blocking filter용 자심 재료를 개발하기 위해서 MnO 24 mol%, ZnO 25 mol% and $Fe_{2}O_{3}$ 51 mol% 의 기본조성에 $MoO_{3}$, $SiO_{2}$, CaO를 첨가하여 $1350^{\circ}C$에서 대기압 상수 A를 7.8롤 고정하고 소결하여 미세구조를 제어하였으며 기본 조성에 $MoO_{3}$ 400 ppm, $SiO_{2}$ 100 ppm and CaO 200 ppm을 첨가한 경우 평균 입경 $25{\mu}m$ 의 균일한 결정립으로 구성된 미세구조를 얻었고 기공의 감소에 의한 치밀화로 $4.98g/cm^{2}$의 고밀도화가 이루어 졌다. 또한 소결체의 균일한 미세구조와 고밀도화로 인해서 8221(${25^{\circ}C}$, 1 KHz) 의 가장 높은 투자율 특성을 나타냈다. 시편의 온도가 증가함에 따라 투자율이 증가되어 ${110^{\circ}C}$에서 13904의 거대 투자융이 측정되었고, 코일의 인가주파수가 1 KHz에서 1 MHz까지 증가됨에 따라 최고 ${102^{\circ}C}$까지 시편 온도가 상승하였다. 가장 높은 투자율 특성을 나타낸 ferrite 코어를 사용하여 단상 및 3상용 블로킹 필터의 감쇄율을 측정한 결과 현재 국내의 전력선 통신용 주파수 대역으로 규정되어 있는 10 KHz ~ 450 KHz 대역에서 각각 -46.46 dB와 -73.9 dB의 최고 값을 얻었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.1 s.116
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• pp.7-14
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• 2007

In this paper, the scan characteristics of phased array antenna consisted of rectangular open-ended waveguide with a triangular grid are investigated. An infinite array structure is analyzed by numerically solving the integral equation for the electric field over the waveguide aperture using waveguide mode function and Floquet mode function. Next, SEP(Scan Element Pattern) and SI(Scan Impedance) characteristics are simulated by CST's MWS(Microwave Studio) and Ansoft's HFSS(High Frequency Structure Simulator) for the finite and infinite array structures. Also, validity of these approaches is verified by comparing the calculated and simulated results with the measured ones for an $8{\times}8$ subarray. Within 10.5 % fractional bandwidth in the X-band, the fabricated subarray showed the flat gain characteristic in the scan range of ${\pm}45^{\circ}C$ in the E-plane(azimuth) and ${\pm}20^{\circ}C$ in the H-plane(elevation), and also showed the return loss characteristic of less than -10 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1591-1597
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• 2003

In this paper, Active Resonator Oscillator using active inductor and active capacitor with HEMTs(agilent ATF­34143) is designed and fabricated. Active inductor with ­25$\Omega$ and 2.4nH in 5.5GHz frequency band and Active capacitor with ­14$\Omega$ and 0.35pF is designed. Active Resonator Oscillator for LO in ISM band(5.8GHz) is designed with active inductor and active capacitor. Active Resonator Oscillator has been simulated by Agilent ADS 2002C. Active Resonator oscillator implemented on the substrate which has the relative dielectric constant of 3.38, the height of 0.508mm, and metal thickness of 0.018mm. This Active Resonator Oscillator shows the oscillation frequency of 5.68GHz with the output power of ­3.6㏈m and phase noise of ­81㏈c/Hz at the offset frequency of 100KHz.

• Journal of Navigation and Port Research
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• v.30 no.5 s.111
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• pp.331-334
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• 2006

In this paper, we designed and fabricated the lowpass filter with the wide stopband characteristics using microp- strip line. Adding the $\lambda_g/4$ open stub at the input and output ports, we developed the L-C ladder type lowpass filter using the open stub which has wide stopband characteristics. In order to reduce the entire size qf this filter, the high impedance microstrip lines were made with the meander structure. The lowpass filter was fabricated with the cutoff frequency 2.3 GHz and its measured frequency responses agree well with the simulation results.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.4
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• pp.9-21
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• 2008

In this paper, we propose a GNSS-based RF receiver, A high precision localization architecture, and a high sensitivity localization architecture in order to solve the satellite navigation system's problem mentioned above. The GNSS-based RF receiver model should have the structure to simultaneously receive both the conventional GPS and navigation information data of future-usable Galileo. As a result, it is constructed as the multi-band which can receive at the same time Ll band (1575.42MHz) of GPS and El band (1575.42MHz), E5A band (1207.1MHz), and E4B band (1176.45MHz) of Galileo This high precision localization architecture proposes a delay lock loop with the structure of Early_early code, Early_late code, Prompt code, Late_early code, and Late_late code other than Early code, Prompt code, and Late code which a previous delay lock loop structure has. As we suggest the delay lock loop structure of 1/4chips spacing, we successfully deal with the synchronization problem with the C/A code derived from inaccuracy of the signal received from the satellite navigation system. The synchronization problem with the C/A code causes an acquisition delay time problem of the vehicle navigation system and leads to performance reduction of the receiver. In addition, as this high sensitivity localization architecture is designed as an asymmetry structure using 20 correlators, maximizes reception amplification factor, and minimizes noise, it improves a reception rate. Satellite navigation system repeatedly transmits the same C/A code 20 times. Consequently, we propose a structure which can use all of the same C/A code. Since this has an adaptive structure and can limit(offer) the number of the correlator according to the nearby environment, it can reduce unnecessary delay time of the system. With the use of this structure, we can lower the acquisition delay time and guarantee the continuity of tracking.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.7-11
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• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.3
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• pp.123-127
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• 2001

The prediction method of the parameter C/sub gs/ of CMOS transistor is proposed by calculating the mobil charge in inversion layer of COMS transistor. This parameter C/sub gs/ decided on the cutoff frequency in MOS transistor in RF range and coupled input and output. This parameter C/sub gs/ in RF range is very important parameter in small signal circuit model. This proposed method is contributed to developing software of extracting parameter value in equivalent circuit model. The method provide the important information to construct a RF nonlinear model for multifinger gate MOSFET. This method will be very valuable to develop a large signal MOSFET model for nonlinear RF IC design.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.6
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• pp.51-57
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• 1997

Low-voltage, low-power gm-C filter utilizing newly dveloped operational transconductance amplifier (OTA) is described in this paper. The OTA has only two MOS transistors in saturation region between $V_{DD}$ and GND, and thus low voltage operation is possible. To improve the linearity, the OTA is made differential. Common mode feedback, essential in differential circuit, requires no additional implemented in $0.8\mu\textrm{m}$ CMOS process, and the center frequency can be controlled from 15MHz with 3.0V single power supply.

• Journal of Satellite, Information and Communications
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• v.2 no.2
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• pp.64-68
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• 2007

This paper describes the development of RF front.end equipment of a wide band high precision satellite navigation receiver to be able to receive the currently available GPS navigation signal and the GALILEO navigation signal to be developed in Europe in the near future. The wide band satellite navigation receiver with high precision performance is composed of L - band antenna, RF/IF converters for multi - band navigation signals, and high performance baseband processor. The L - band satellite navigation antenna is able to be received the signals in the range from 1.1 GHz to 1.6 GHz and from the navigation satellite positioned near the horizon. The navigation signal of GALILEO navigation satellite consists of L1, E5, and E6 band with signal bandwidth more than 20 MHz which is wider than GPS signal. Due to the wide band navigation signal, the IF frequency and signal processing speed should be increased. The RF/IF converter has been designed with the single stage downconversion structure, and the IF frequency of 140 MHz has been derived from considering the maximum signal bandwidth and the sampling frequency of 112 MHz to be used in ADC circuit. The final output of RF/IF converter is a digital IF signal which is generated from signal processing of the AD converter from the IF signal. The developed RF front - end has the C/N0 performance over 40dB - Hz for the - 130dBm input signal power and includes the automatic gain control circuits to provide the dynamic range over 40dB.