• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.5
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• pp.97-105
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• 2008

The micro capacitors are passive elements necessary to electronic circuits and wireless portable PAN(personal area network) and Mobile Communications device modules in the baseband circuits in combination with another passive and active devices. As capacitance is proportionally increased with dielectric constant and electrode areas, in addition, inversely decreased the thickness of the dielectric material, thus thin film capacitors are generally seen as a preferable means to achieve high performance and thin film capacitors are used in a variety of functional circuit devices. In this paper, propose dielectric material as AIN(Aluminium nitride) to make micro thin film capacitor, and this capacitor has the MIM(metal-insulator-metal) structure. AIN thin films are widespread applied because they had more excellent properties such as chemical stability, high thermal conductivity, electrical isolation and so on. In addition, AIN films show low frequency response for baseband signal ranges, I-V and C-V electrical characterization of a thin film micro capacitor. The above experimental test and estimated results demonstrate that the thin film capacitor has sufficient and efficient functional performance to be the baseband range frequency of general electronics circuit and passive device applications.

• Journal of IKEEE
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• v.26 no.4
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• pp.722-727
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• 2022

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm². It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

• Journal of IKEEE
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• v.28 no.1
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• pp.33-37
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• 2024

In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves small signal gain of 22.75 dB ~ 25.14 dB and noise figure of 1.84 dB ~ 1.94 dB in the desired band of 9 GHz to 10 GHz. Input and output return loss values are -11.36 dB ~ -24.49 dB and -11.11 dB ~ -17.68 dB, respectively. The LNA MMIC can withstand 40 dBm (10 W) input power without performance degradation. The chip dimensions are 3.67 mm × 1.15 mm. The developed GaN-based LNA MMIC is applicable to various X-band applications.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.9C
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• pp.868-875
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• 2003

In this paper, enhanced multiresolution motion estimation(MRME) using reduction of one-pixel shift in wavelet domain is proposed. Conventional multiresolution motion estimation using hierarchical relationship of wavelet coefficient has difficulty for accurate motion estimation due to shift-variant property by decimation process of the wavelet transform. Therefore, to overcome shift-variant property of wavelet coefficient, two level wavelet transform is performed. In order too reduce one-pixel shift on low band signal, S$_4$ band is interpolated by inserting average value. Secondly, one level wavelet transform is applied to the interpolated S$_4$ band. To estimate initial motion vector, block matching algorithm is applied to low band signal S$_{8}$. Multiresolution motion estimation is performed at the rest subbands in low level. According to the experimental results, proposed method showed 1-2dB improvement of PSNR performance at the same bit rate as well as subjective quality compared with the conventional multiresolution motion estimation(MRME) methods and full-search block matching in wavelet domain.

• Journal of Korea Multimedia Society
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• v.12 no.10
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• pp.1407-1417
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• 2009

Today is the Information age which Internet service acts a most important Information Source. So the Power Line Communication has been achieved to offer Internet service for Last-Mile area. And Research is achieved to frequence range from 30MHz to 80MHz for High-speed communication service. But, Power Line is not suitable for communication, So, electric wave is generated from flow of communication information. And the electric wave is interfered with Wireless Communication Service using the same frequence range. In this paper, a Notch Filter for reduce of interference between Power Line Communication and Wireless Communication Service is proposed. The proposed emulator is developed using TMS320C6416T DSP board of Texas Instruments.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.714-717
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• 2011

무선 송수신의 보급이 급속도로 확대됨에 따라 모바일 사용자는 새로운 기기를 구입해야 하는 불편을 따른다. 이에 대안으로 같은 기기로 다양한 기준주파수 보다, 낮은 주파수를 수용할 수 있는 주파수대역의 튜닝이 가능한 DCR(Direct conversion receiver) 의 필요성이 대두 되고 있다. 이에 DCR에 들어가는 저역통과필터는 다양한 기준주파수를 만족하기 위한 대역폭, 이득을 튜닝 하는데 중요한 부분을 차지하게 된다. 본 논문에서는 3차 Elliptic Gm-C Low Pass filter를 자이레이터 방식을 통해 DCR내의 Low Pass filter를 구현 하였다. 공급전압은 3.3V이고 외부에서 인가되는 튜닝전압에 의해 차단 주파수가 변화됨을 알 수 있었다. 그 결과를 통해서 레이아웃 하였으며, 설계된 회로는 COMS $0.18{\mu}m$ 설계 파라미터를 활용하여 Cadence 사의 Specter로 시뮬레이션 하였으며, Virtuso2로 레이아웃 하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.11
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• pp.1074-1077
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• 2013

This paper analyzes the benefit of using directional antennas against eavesdropping attack in millimeter wave (mmWave)-based networks. All devices are equipped with a directional antenna or an omni-directional antenna in a single-hop communications. The probability of a device being detected by an eavesdropper is analyzed based on the exposure region of a device. The relative detection rate is introduced to represent the benefit of using directional antenna. Numerical results show that there exists an optimal number of devices that maximizes the detection probability and it varies according to the parameters such as antenna beamwidth. It shows that the use of directional antenna enables to protect the devices from the detection by an eavesdropper for almost the whole situation in mmWave band communication.

• Resources Recycling
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• v.12 no.6
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• pp.26-31
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• 2003

The power loss characteristics of Mn-Zn ferrite were observed with the sintering temperature. In case of $1150 ^{\circ}C$ sintering, the core loss increased with measuring temperature, and does not have minimum value at the point where the magnetocrystalline anisotropy be 'zero'. This reason mainly due to the change of core loss mechanism with grain size which affects residual loss. The grain size and sintered density slightly increased with equilibrium oxygen partial pressure at$ 1150 ^{\circ}C$ sintering. The resistivity and initial permeability showed no significance with atmosphere, these results due to complex effect of $Fe^{2+}$ concentration and microstructure change. The core loss at $100^{\circ}C$ decreased as the equilibrium oxygen partial pressure increased.e increased.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.1
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• pp.34-40
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• 2004

The PLDRO(Phase-Locked Dielectric Resonator Oscillator) with low phase noise is designed for X-band. The phase of VCDRO(Voltage Controlled Dielectric Resonator Oscillator) is locked to that of a high stable reference oscillator by using a SPD(Sampling Phase Detector) to improve phase noise performance in the loop bandwidth. And, the VCDRO is implemented using a high impedance inverter coupled with dielectric resonator to improve the phase noise performance out of the loop bandwidth. This PLDRO exhibits the harmonic rejection characteristics of 51.67㏈c and requires below 1.95W. The phase noise characteristics are performed as -107.17㏈c/Hz at 10KHz offset frequency and -113.0㏈c/Hz at 100KHz offset frequency, respectively, at ambient. And the output power of 13.0㏈m${\pm}$0.33㏈ is measured over the temperature range of $-20 ∼ +70^{\circ}C$ .

• Journal of Internet Computing and Services
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• v.8 no.4
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• pp.51-59
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• 2007

This paper presents the development of RFID educational system based on using 900MHz air interface between the reader and the active tag. The software of reader and the active tag is developed on embedded environment, and the software of PC controlling the reader is based on window OS operated as the server. The AT89C51ED2 VLSI chip is used for the processor of the reader and the active tag. As the development environment, Keil compiler is used for the reader and the active tag of which the programing language is C. The visual C language of the visual studio on the PC activated as the server is used for development language. To verify the function of the system, PC gets the tag's identification number through the reader and send the data to with the active tag memory a certain contents as "wite" operation. Finally the data written from the active tag's memory is sent to the PC via the reader as "read" operation and compare the received data with one already sent to the tag.