• Title/Summary/Keyword: C₃F/sub 8/

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The Properties on Ceramic/glass Composites of SiO2-B2O3-R(CaO, BaO, ZnO, Bi2O3 Borosilicate Glass System for Low Temperature Ceramics (저온 소결 세라믹스용 SiO2-B2O3-R(CaO, BaO, ZnO, Bi2O3 붕규산염계 세라믹/유리 복합체의 특성)

  • Kim, Kwan-Soo;Yoon, Sang-Ok;Shim, Sang-Heung;Park, Jong-Guk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.1
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    • pp.19-24
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    • 2007
  • The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.

The Effect of BaF2 Particle Size for Zirconium Recycling by Precipitation from Waste Acid and Ba2ZrF8 Vacuum Distillation Property (폐 산세 용액으로부터 공침 반응에 의한 지르코늄 회수 시 BaF2 입도 영향 및 Ba2ZrF8의 진공증류 특성)

  • Choi, Jeong Hun;Nersisyan, Hayk;Han, Seul Ki;Kim, Young Min;Park, Cheol-Ho;Kahng, Jong Won;Na, Ki Hyun;Kim, Jeong hun;Lee, Jong Hyeon
    • Resources Recycling
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    • v.26 no.6
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    • pp.29-37
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    • 2017
  • Nuclear fuel cladding tube is fabricated by pilgering and annealing process. In order to remove impurity and oxygen layer on the surface, pickling process is carried out. When Zirconium(Zr) is dissolved and saturated in acid solution during the pickling process, all the waste acid including Zr is disposed. Therefore, $BaF_2$ is added into the waste acid to extract Zr and $Ba_2ZrF_8$ is subsequently formed. To recycle Zr by electrowinning process, $Ba_2ZrF_8$ is used as electrolyte, but it has high melting point ($1053^{\circ}C$). $ZrF_4$ should be added into $Ba_2ZrF_8$ to decrease the melting point. In this paper, it was investigated that $Ba_2ZrF_8$ was separated to $BaF_2$ and $ZrF_4$ by vacuum distillation. Firstly, $BaF_2$ with different particle size ($1{\mu}m$, $35{\mu}m$, $110{\mu}m$) was added into the waste acid and the respective precipitation property was estimated. $BaF_2$ obtained by vacuum distillation was shattered by ball-milling with different time. The precipitation efficiency was compared with $1{\mu}m$ of ${BaF_2}^{\prime}s$ one, which was not used as precipitation agent.

Effect of Calcination Temperature on the Sintering Behaviors and Microwave Dielectric Properties of (Zn0.8Mg0.2)TiO3 System (하소온도가 (Zn0.8Mg0.2)TiO3계의 소결거동과 마이크로파 유전특성에 미치는 영향)

  • 심우성;방재철
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1205-1209
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    • 2003
  • We investigated the effects of calcination temperatures on the sintering behaviors and microwave dielectric Properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ system. Highly densified samples were obtained at the sintering temperatures below 100$0^{\circ}C$ with additions of 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$. From the examination of the existing phases and microstructures before and after sintering of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ system which is calcined at the various temperatures ranging from 80$0^{\circ}C$ to 100$0^{\circ}C$, it was found that higher Q${\times}$ $f_{o}$ values were obtained when unreacted phases in calcined body were reduced. When calcined at 100$0^{\circ}C$ and sintered at 90$0^{\circ}C$, it consists of hexagonal as. a main phase with uniform microstructure and exhibits Q${\times}$ $f_{o}$ value of 42,000 GHz and dielectric constant of 22. 22. 22.

Enthalpy Changes of Adsorption of Tetrafluorocarbon (CF4) and Hexafluoroethane (C2F6) on Activated Carbon

  • Shin, Jiyoung;Suh, Sung-Sup;Choi, Moon Kyu
    • Clean Technology
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    • v.20 no.1
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    • pp.22-27
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    • 2014
  • Under low pressures of $CF_4$ and $C_2F_6$ up to 20.7 kPa, the equilibrium adsorbed quantity on activated carbon was experimentally examined using the volumetric method at various temperatures between 293.15 K and 333.15 K. To give the best fit to the experimental data curve, the two step model (i.e., Langmuir model for the first layer adsorption and then Freundlich physisorption) is suggested. The method of initial slope yielded the enthalpy of adsorption for the first step while we could apply the Clausius-Clapeyron equation to find the heat of adsorption of the second step. They are 25.9 kJ/mol and 11.8 kJ/mol, respectively, with $CF_4$, and 38.7 and 38.2 kJ/mol with $C_2F_6$.

Low Temperature Sintering and Microwave Dielectric Properties of Ca[Ti1-x(Ni1/3Nb2/3)x]O3 Ceramics (Ca[Ti1-x(Ni1/3Nb2/3)x]O3 세라믹스의 저온소결 및 마이크로파 유전특성)

  • Lee, Young-Gyu;Kim, Hyo-Tae;Nam, Joong-Hee;Kim, Jong-hee;Paik, Ungyu
    • Journal of the Korean Ceramic Society
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    • v.43 no.1 s.284
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    • pp.55-61
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    • 2006
  • The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.

Low Temperature Sintering and Dielectric Properties of BiNbO4 and ZnNb2O6 Ceramics with Zinc Borosilicate Glass

  • Kim, Kwan-Soo;Kim, Shin;Yoon, Sang-Ok;Park, Jong-Guk
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.5
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    • pp.201-205
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    • 2007
  • Low temperature sintering behavior and microwave dielectric properties of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}zinc$ borosilicate glass(ZBS) systems were investigated with a view to applying the composition to LTCC technology. The addition of $10{\sim}30$ wt% ZBS in both systems ensured successful sintering below $900^{\circ}C$. For the $BiNbO_{4^-}ZBS$ system, the sintering was completed when 15 wt% ZBS was added whereas 25 wt% ZBS was necessary for the $ZnNb_2O_{6^-}zinc$ system. Secondary phase was not observed in the $BiNbO_{4^-}ZBS$ system but a small amount of $ZnNb_2O_6$ with the willemite structure as the secondary phase was observed in the $ZnNb_2O_{6^-}ZBS$ system. In terms of dielectric properties, the application of the $BiNbO_{4^-}$ and the $ZnNb_2O_{6^-}ZBS$ systems sintered at $900^{\circ}C$ to LTCC were shown to be appropriate; $BiNbO_{4^-}15$ wt% ZBS($\varepsilon_r=25,\;Q{\times}f\;value=3,700GHz,\;\tau_f=-32ppm/^{\circ}C$) and $ZnNb_2O_{6^-}25$ wt% ZBS($\varepsilon_r=15.8,\;Q{\times}f\;value=5,400GHz,\;\tau_f=-98ppm/^{\circ}C$).

Synthesis and Characterization of Two New Fluoroplumbate(II) Complexes: Tetrabutylammonium Fluorodihaloplumbate, (But)4N[PbX2F] (X = Cl, I)

  • Javanshir, Zahra;Mehrani, Kheyrollah;Ghammamy, Shahriare;Saghatforoush, LotfAli;Seyedsadjadi, Seyedabolfazl;Hassanijoshaghani, Ali;Tavakol, Hossein
    • Bulletin of the Korean Chemical Society
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    • v.29 no.8
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    • pp.1464-1466
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    • 2008
  • Tetrabutylammonium Fluorodichloroplumbate(II), N$(C_4H_9)_4$[$PbCl_2F$], TBAFDiCP and Tetrabutylammonium Fluorodiiodoplumbate(II), [$(C_4H_9)_4$N][$PbI_2F$], TBAFDiIP are the first examples of fluoroplumbate salts that have been prepared from the reaction of $(C_4H_9)_4$NF with $PbCl_2$ and $PbI_2$ respectively using either $CH_3CN$ solvent. These new compound characterized by elemental analysis, IR, UV/Visible, $^1H$ NMR, and $^{19}F$ NMR techniques.

Influence of Nd2O3 Addition to 0.3CaTiO3-0.7(Li1/2Nb1/2)TiO3 on their Microwave Dielectric Properties (Nd2O3 첨가가 0.3CaTiO3-0.7(Li1/2Nb1/2)TiO3 세라믹스의 마이크로파 유전특성에 미치는 영향)

  • 김범수;박일환;윤상옥;김경용
    • Journal of the Korean Ceramic Society
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    • v.39 no.1
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    • pp.26-32
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    • 2002
  • The effects of $Nd_2O_3$ addition to $Q{\cdot}f_{0}(GHz)$ ceramics with ${\varepsilon}_r$ of 126, $Q{\cdot}f_{0}(GHz)$ of 2240 and of $68\;ppm/^{\circ}C$ on their microwave properties were investigated. For the addition of 5 wt% $Nd_2O_3$, the dielectric constant (${\varepsilon}_r$) showed maximum value of 131, then decreased with the further addition of $Nd_2O_3$. $Q{\cdot}f_{0}(GHz)$ value was still increased to 3533 with 9 wt% $Nd_2O_3$ addition, it is influenced by densification of grain boundary. With more addition of $Nd_2O_3$ up to 18 wt%, the abnormal grain growth have influence on the decreasing of $Q{\cdot}f_{0}(GHz)$ value. But with the further addition of $Nd_2O_3$ over 25 wt%, the $Q{\cdot}f_{0}(GHz)$ value was again increased by the effect of the second phase ($Nd_2Ti_2O_7$) forming. The temperature coefficient of resonant frequency (${\tau}_f$) was decreased from $+\;68\;ppm/^{\circ}C$ with the addition of $Nd_2O_3$, reached $0\;ppm/^{\circ}C$ at 12 wt% addition, and became negative with the further addition of $Nd_2O_3$. The optimum microwave dielectric properties were obtained for $0.3CaTiO_3-0.7(Li_{1/2}Nd_{1/2})TiO_3$ with 9 wt% $Nd_2O_3$ sintered at $1425^{\circ}C$ for 3 hrs. The dielectric constant (${\varepsilon}_r$), the $Q{\cdot}f_{0}(GHz)$ value, and the temperature coefficient of resonant frequency (${\tau}_f$) were 108, 3533, and $+\;6\;ppm/^{\circ}C$, respectively.

X-ray Absorption and Photoemission Spectroscopy Study of Nd1/2A1/2Mn1-yCryO3(A=Ca, Sr)

  • Kang, J.S.;Kim, J.H.;Han, S.W.;Kim, K.H.;Choi, E.J.;Sekiyama, A.;Kasai, S.;Suga, S.;Kimura, T.
    • Journal of Magnetics
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    • v.8 no.4
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    • pp.142-145
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    • 2003
  • Valence states and electronic structures of Cr-doped $Nd_{1/2}A_{1/2}Mn_{1-y}Cr_{y}O_3$(NAMO; A=Ca, Sr) manganites have been investigated using x-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (PES). All the Cr-doped NAMO systems exhibit the clear metallic Fermi edges in the Mn $e_{g}$ PES spectra near $E_{F}$. The spectral intensity at $E_{F}$ is higher for Cr-doped N $d_{l}$ 2/S $r_{l}$ 2/Mn $O_3$(NSMO) than for Cr-doped N $d_{l}$ 2/C $a_{l}$ 2/Mn $O_3$ (NCMO), reflecting the stronger metallic nature for NSMO than for NCMO. The measured Cr 2p XAS spectra are found to be very similar to that of C $r_2$ $O_3$, indicating that Cr ions in Cr-doped NAMO are in the trivalent C states ( $t^3$$_{2g}$). The Cr 2p XAS data are consistent with the Cr 3d PES spectra located at ∼1.3 eV below $E_{F}$ and having no emission near $E_{F}$.

Dry Etching Characteristics of LiNbO3 Single Crystal for Optical Waveguide Fabrication (광도파로 제작을 위한 단결정 LiNbO3 건식 식각 특성)

  • Park, Woo-Jung;Yang, Woo-Seok;Lee, Han-Young;Yoon, Dae-Ho
    • Journal of the Korean Ceramic Society
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    • v.42 no.4
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    • pp.232-236
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    • 2005
  • The etching characteristics of a $LiNbO_{3}$ optical waveguide structure have been investigated using neutral loop discharge plasma with the mixture of $C_{3}F_{8}$ and Ar and the bias power parameters. The etching rate and profile angle of optical waveguide with etching parameters were evaluated by scanning electron microscopy. Also, the etching RMS roughness was evaluated by atomic force microscopy. From the results of optimum etching conditions are the $C_{3}F_{8}$ gas flow ratio of 0.2 and the bias power of 300 W.