• THE INTERNATIONAL COMMERCE & LAW REVIEW
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• v.58
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• pp.237-263
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• 2013

Traditionally, a L/C (letter of credit) has been known as a relatively low risk method of payment. This is why L/C has been used in international trade. However, L/C has a number of weak points such as high cost, long processing time, and complicated documents. Using an electronic L/C is one way to solve those weak points. In Korea, there are two types of electronic L/C. One is the EDI (Electronic Data Interchange) based L/C and the other one is the XML (Extensible Markup Language) based L/C. The former, established in 1990's, is sent from banks to the beneficiary solely through VAN (Value Added Network, KTNET) operators. On the other hand the latter, started in 2005, is sent from banks to KFTC (Korea Financial Telecommunications & Clearings Institute) for management of the L/C balance, as well as to KTNET. So far, paper L/C and EDI based L/C have been used overwhelmingly instead of XML based L/C in spite of the aforesaid disadvantages. In this paper, the authors examined empirically why the users of electronic L/C were reluctant to use XML based L/C. The results are as follows. First, the users of paper L/C were more dissatisfied than the users of electronic L/C due to many factors such as cost, the time required, and information reuse. Second, the users who have more experience with XML based L/C wanted to adopt integrated management with EDI based L/C more than the users who had not experienced XML based L/C. Third, the users who had used more than one form of L/C wanted to adopt integrated management to EDI and XML based L/C more than the users who had only used one form of L/C. Therefore, the authority for electronic L/C should consider a change of the policy from the XML based electronic L/C oriented to integrated management of the various types of L/C.

• Korean journal of applied entomology
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• v.42 no.1
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• pp.9-13
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• 2003

Cuticular hydrocarbons of antenna, legs and wings from two species of honeybee worker of Apis mellifera L. and Apis cerana F. can be analyzed directly with gas chromatograph and GC/MS without solvent extraction. The saturated hydrocarbons identified in selected part of both species were nC22, nC23, nC25-nC3O, nC32 and nC34 except nC24. Two saturated hydrocarbons, nC26 (23.0-42.6%) and nC28 (16.8-54.8%), were major compounds in both species and others were minor compounds. A. mellifera can be distinguished from A. cerana F. by having higher proportion of nC30, nC32 and nC34 by having lower proportion of nC25 from three selected part of both species.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.352-357
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% TiB$_2$ and using 61vo1.% SiC - 39vo1.% WC powders with the liquid forming additives of 12wt% $Al_2$O$_3$＋Y$_2$O$_3$ by pressureless annealing at 180$0^{\circ}C$ for 4 hours. Reactions between SiC and transition metal TiB$_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), TiB$_2$ and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-TiB$_2$, and SiC(2H), WC and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phase on the SiC-WC composites. $\beta$\$\longrightarrow$$\alpha$-SiC phase transformation was ocurred on the SiC-TiB$_2$, but $\alpha$\$\longrightarrow$$\beta$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the vicker's hardness, the flexural strength and the fracture toughness showed respectively value of 96.2%, 13.34GPa, 310.19Mpa and 5.53Mpaㆍml/2 in SiC-WC composites. The electrical resistivity of the SiC-TiB$_2$ and the SiC-WC composites is all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to 50$0^{\circ}C$. 2.64${\times}$10-2/$^{\circ}C$ of PTCR of SiC-WC was higher than 1.645${\times}$10-3/$^{\circ}C$ of SiC-TiB$_2$ composites.posites.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.33 no.2
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• pp.345-351
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• 2023

As software development progresses and programs become increasingly complex, the cost of reducing and managing software vulnerabilities has also increased. To address this issue, the Rust programming language, which guarantees Memory Safety, has been suggested as an alternative for more error-prone languages such as traditional C/C++. However, Rust also supports the use of libraries written in C/C++ to enhance compatibility with older languages and avoid redundant development, compromising its original guarantees. For example, memory corruption happened in C/C++ can lead to exploits such as buffer overflow, Use-After-Free and null-pointer dereferecing. To tackle this problem, recent studies have been conducted to secure interactino between Rust and C/C++ by isolation. This paper uncovers areas that have not been fully explored in previous studies, following limitation analysis on each. Finally, this paper suggests the future direction of research on safe interaction between Rust and C/C++.

• Journal of Korean Society of Environmental Engineers
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• v.33 no.7
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• pp.511-515
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• 2011

The aim of this study was to investigate the efficiency of temperature, light intensity and pH on the growth rate of Chlorella vulgaris (C. vulgaris). The size of C. vulgaris (FC-16) was $3-8{\mu}m$, having round in shape. The cells of C. vulgaris (FC-16) was cultured in the Jaworski's Medium with deionized water. To evaluate the efficiency of temperature, light intensity and pH on the growth rate of C. vulgaris, six different fractions of temperature ($10^{\circ}C$, $15^{\circ}C$, $20^{\circ}C$, $25^{\circ}C$, $30^{\circ}C$, $35^{\circ}C$), various light intensities ($100-800{\mu}Em^{-2}s^{-1}$) and seven different fractions of pH (3, 4, 5, 6, 7, 7.5, 9) were prepared. The growth rate of C. vulgaris cultivation was approximately 5.2 to 5.5 times faster, the concentration of Chlorophyll a was also 5 to 5.5 times higher, and cell volume per unit area was 14% higher at $25^{\circ}C$ to $30^{\circ}C$ than those at $10^{\circ}C$. Therefore, the optimal temperature for cultivation of C. vulgaris was estimated $25^{\circ}C$ to $30^{\circ}C$. The growth rate of C. vulgaris increased slowly up to 5 days, exploded after 5 days until 15 days, and then stoped after that. The optimum cultivation period of C. vulgaris was estimated as 15 days. The optimum pH for the growth rate of C. vulgaris was determined pH 7 to 7.5.

• Communications for Statistical Applications and Methods
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• v.8 no.3
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• pp.697-709
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• 2001

In this paper we study two vector-valued process capability indices $C_{p}$=($C_{px}$, $C_{py}$ ) and C/aub pm/=( $C_{pmx}$, $C_{pmy}$) considering process capability indices $C_{p}$ and $C_{pm}$ . First, two asymptotic distributions of plug-in estimators $C_{p}$=($C_{px}$, $C_{py}$ ) and $C_{pm}$ =) $C_{pmx}$, $C_{pmy}$) are derived.. With the asymptotic distributions, we propose asymptotic confidence regions for our indices. Next, obtaining the asymptotic distributions of two bootstrap estimators $C_{p}$=($C_{px}$, $C_{py}$ )and $C_{pm}$ =( $C_{pmx}$, $C_{pmy}$) with our bootstrap algorithm, we will provide the consistency of our bootstrap for statistical inference. Also, with the consistency of our bootstrap, we propose bootstrap asymptotic confidence regions for our indices. (no abstract, see full-text)see full-text)e full-text)

• Journal of fish pathology
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• v.11 no.2
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• pp.105-111
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• 1998

Three species of Coitocoecum, C. orthorchis, C. latum and C. glandulosum were found from the marine fish of the Korean southern sea. Among them, C. latum and C. glandulosum were reported for the first time in Korea, and Acanthopagrus schlegeli was recorded as a new host species for C. glandulosum. Two species, C. acanthogobium and C. koreanum, reported by Park (1939) were treated as synomyms of C. orthorchis.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• KSBB Journal
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• v.5 no.4
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• pp.341-345
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• 1990

The composition of triglyceride in the oil of walnut and pine-nut were analysed quantitatively by Tri-analysis column of HPLC. The results were as follows: 1. The compositions of triglyceride of pine-nut oil were $C_{52}=31.55%,\;C_{44}=20.72%,\;C_{54}=17.52%,\;C_{34}=15.24%,\;C_{56}=12.50%$ in order, respectively. 2. The compositions of triglyceride of walnut oil were $C_{44}=38.66%,\;C_{52}=29.47%,\;C_{54}=16.53%,\;C_{34}=11.12%,\;C_{50}=1.51%$ in order, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.732-736
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• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.