• Korean Journal of Food Science and Technology
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• v.20 no.2
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• pp.200-204
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• 1988

Cryoprotectivity of garlic bulb caused by the freezing point depression was studied to establish the possibility of preserving the garlic at subzero temperature. Freezing point of fresh garlic tissue showed almost consistency, ranged from $-4^{\circ}C\;to\;-5^{\circ}C$ regardless of the cultivation area. However, the freezing point was varied with the postharvest treatment and storage conditions, so that freezing point of fresh garlic was $-3.5^{\circ}C$ before predrying, $-4.5^{\circ}C$ after predrying, $-5.5^{\circ}C$ after 5 months of storage and that of dead tissue was $-2.5^{\circ}C$. Freezing lethality of fresh garlic bulb preserved at -4, -6.5 and $-15.5^{\circ}C$ were 0, 10 and 70%, respectively. From these results, it was concluded that critical lethal temperature might be $-5{\sim}-6^{\circ}C$. The respiration rate of garlic bulb decreased with lowering the storage temperature down to $-4^{\circ}C$. $Q_{10}$ value was 2 at the temperature range of $-4{\sim}-5^{\circ}C$, 3 at $5{\sim}15^{\circ}C$ and 1.2 at $15{\sim}37^{\circ}C$. In conclusion, optimal temperature for garlic storage was $-4^{\circ}C$ when considering the cryoprotectivity of garlic bulb at subzero temperature.

• Proceedings of the Korean Association of Geographic Inforamtion Studies Conference
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• 2000.11a
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• pp.49-53
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• 2000

• Proceedings of the Korean Association of Geographic Inforamtion Studies Conference
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• 2000.11a
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• pp.67-70
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• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.199-200
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• 2009

This paper describes the electrical properties of polycrystalline (poly) 3C-SiC thin films with different nitrogen doping concentrations. The in-situ-doped poly 3C-SiC thin films were deposited by using atmospheric-pressure chemical vapor deposition (APCVD) at $1200^{\circ}C$ with hexamethyldisilane (HMDS: $Si_2$ $(CH_3)_6)$ as a single precursor and 0 ~ 100 sccm of $N_2$ as the dopant source gas. The peaks of the SiC (111) and the Si-C bonding were observed for the poly 3C-SiC thin films grown on $SiO_2/Si$ substrates by using X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FT-IR) analyses, respectively. The resistivity of the poly 3C-SiC thin films decreased from $8.35\;{\Omega}{\cdot}cm$ for $N_2$ of 0 sccm to $0.014\;{\Omega}{\cdot}cm$ with $N_2$ of 100 sccm. The carrier concentration of the poly 3C-SiC films increased with doping from $3.0819\;{\times}\;10^{17}$ to $2.2994\;{\times}\;10^{19}\;cm^{-3}$, and their electronic mobilities increased from 2.433 to $29.299\;cm^2/V{\cdot}S$.

• Journal of Nutrition and Health
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• v.29 no.1
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• pp.122-133
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• 1996

As ciarette smoking adversely affects vitamin C metabolism in humans, smokers need substantially more vitamin C intake than do non-smokers to achieve similar serum vitamin C concentration. To provide the basic information currently available for the determination of vitamin C requirement for Korean smokers, we investigated the differences the serum vitamin C values between smokers(n=53) and non-smokers(n=62) in relation to their intake of the vitamin through diet in 115 male college students, who had not been using vitamin C supplements. Dietary intakes of vitamin C were determined by a 24-hour recall, and serum vitamin C was determined using the 2, 4-dinitrophenylhydrazine method. The mean vitamin C intakes of smokers and non-smokers were consuming less than 75% of the Koeran RDA for vitamin c in their diet. Smokers consumed yellow and green leafy vegetables more often (P=0.02) and fresh fruits less often(P=0.006) than non-smokers. The mean serum vitamin C concentration of smokers consuming the same amounts of vitamine C as non-smokers, 64.3 umol/1, were 20% lower than for non-smokers, 80.1 umol/l(P<0.05). The risk of low serum vitamin C concentration (LoC) among smokers were 3.8% compared with 1.6% in non-smokers, and the odd ratio for LoC risk was 2.43. There were no correlations between dietary and serum vitamin C for smokers and non-smokers. It was concluded that smokers might require at least 20% more vitamin C to reach the same concentration comparable to non-smokers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.493-498
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• 2008

This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.

• Journal of Ginseng Research
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• v.6 no.1
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• pp.11-16
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• 1982

New shoot growth of Panax ginseng root was investigated comparing with burley and soybean from l0$^{\circ}C$ to 30$^{\circ}C$ under dark. Shoot growth ceased by 12days at 30$^{\circ}C$ and optimum temperature appeared to be 15$^{\circ}C$/20$^{\circ}C$ (15hrs/9 hrs) , and 15$^{\circ}C$/15$^{\circ}C$ for ginseng. Shoot growth seems to be Poor below l0$^{\circ}C$. Temperature for maximum growth 20$^{\circ}C$/20$^{\circ}C$ for barley and 20$^{\circ}C$ /25$^{\circ}C$ for soybean. Barley did not germinate above 25$^{\circ}C$/25$^{\circ}C$, but grow better than soybean below 15$^{\circ}C$/25$^{\circ}C$. Fresh weight of 2 weeks suggesting cessation of water uptake at higher temporal use. Ginseng showed greater root ply s shoot of ginseng was linearly increased at 15$^{\circ}C$ but did not increased at 25$^{\circ}C$ after occurence of die-back of new shoot or root rot above 25$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1194-1202
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• 1995

The influences of TiC additions to the α-SiC on microstructural, mechanical, and electrical properties were investigated. Electrical discharge machinability of SiC-TiC composites was also studied. Samples were prepared by adding 30, 45, 60 wt.% TiC particles as a second phase to a SiC matrix. Sintering of SiC-TiC composites was done by hot pressing under a vacuum atmospehre from 1000 to 2000℃ with a pressure of 32 MPa and held for 90 minutes at 2000℃. Samples obtained by hot pressing were fully dense with the relative densities over 99% except 60wt.% TiC samples. Flexural strength and fracture toughness of the samples were increased with the TiC content. In case of SiC samples containing 45 wt.% TiC, the fracture toughness showed 90% increase compared to that of monolithic SiC sample. The crack propagation and crack deflection were observed with a SEM for etched samples after Vicker's indentation. The electrical resistivities of SiC-TiC composites were measured utilizing the four-point probe. The electrical dischage machining of composites was also conducted to evaluate the machinability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Journal of Powder Materials
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• v.21 no.6
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• pp.415-421
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• 2014

W-10vol.%ZrC composites reinforced by micrometric and nanosized ZrC particles were prepared by hot-pressing of 25 MPa for 2 h at $1900^{\circ}C$. The effect of ZrC particle size on microstructure and mechanical properties at room temperature and elevated temperatures was investigated by X-ray diffraction analysis, scanning electron microscope and transmission electron microscope observations and the flexural strength test of the W-ZrC composite. Microstructural analysis of the W-ZrC composite revealed that nanosized ZrC particles were homogeneously dispersed in the W matrix inhibiting W grain growth compared to W specimen with micrometric ZrC particle. As a result, its flexural strength was significantly improved. The flexural strength at room temperature for W-ZrC composite using nanosized ZrC particle being 740 MPa increased by around 2 times than that of specimen using micrometric ZrC particle which was 377 MPa. The maximum strength of 935 MPa was tested at $1200^{\circ}C$ on the W composite specimen containing nanosized ZrC particle.