• Title/Summary/Keyword: Bulk Carrier

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Experimental investigation of frictional resistance reduction with air layer on the hull bottom of a ship

  • Jang, Jinho;Choi, Soon Ho;Ahn, Sung-Mok;Kim, Booki;Seo, Jong Soo
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.6 no.2
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    • pp.363-379
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    • 2014
  • In an effort to cope with recent high oil price and global warming, developments of air lubricated ships have been pursued to reduce greenhouse gas emissions and to save fuel costs by reducing the frictional resistance. In this study, reduction in the frictional resistance by air lubrication with air layers generated on the lower surface of a flat plate was investigated experimentally in the large water tunnel of SSMB. The generated air layers were observed, and changes in the local frictional drag were measured at various flow rates of injected air. The results indicated that air lubrication with air layers might be useful in reducing the frictional resistance at specific conditions of air injection. Accordingly, resistance and self-propulsion tests for a 66K DWT bulk carrier were carried out in the towing tank of SSMB to estimate the expected net power savings.

Modeling of Active Layer and Injection-locking Characteristics in Polarized and Unpolarized Fabry-Perot Laser Diodes (편광 또는 무편광 패브리-페롯 레이저 다이오드의 활성층 및 주입 잠금 동작 특성 모델링)

  • Chung, Youngchul;Yi, Jong Chang;Cho, Ho Sung
    • Korean Journal of Optics and Photonics
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    • v.23 no.1
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    • pp.42-51
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    • 2012
  • In this paper, injection-locking characteristics versus active layer structures in Fabry-Perot laser diodes (FP-LD) are compared. TE and TM gain spectra and peak gains versus carrier density in polarized and unpolarized multiple quantum well structures and in an unpolarized bulk structure are calculated. The calculated gain parameters are applied to a time-domain large-signal model to simulate the injection-locking characteristics. The results show that RIN in unpolarized FD-LDs is about 3 dB lower than that in a polarized FP-LD and that the eye characteristics of the unpolarized FP-LD are much better than those of the polarized FP-LD.

New Design and Synthesis of Donor-Acceptor units by Introducing Boron Based to Non-Boron based Semiconductor for high Voc OPV

  • Ryu, Ka Yeon;Cho, Kyuwan;Kim, Won-Suk;Kim, Kyungkon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.432.2-432.2
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    • 2016
  • A new A-D-A type (Acceptor-Donor-Acceptor) conjugated based on pyridine-borane complex (Donor), non-boron fluorine (Donor) and 2,5-bis(alkyl)-3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP) (Acceptor) were designed and synthesized via Pd-catalyzed Suzuki cross-coupling reaction. The synthesized boron based complex exhibited high electron affinity, which indicates deep HOMO energy levels and good visible absorption led to their use as donors in BHJ (bulk heterojunction) solar cells. Inverted devices were fabricated, reaching open-circuit voltage as high as 0.91eV. To probe structure-property relationship and search for design principle, we have synthesized pyridine-boron based electron donating small molecules. In this study, we report a new synthetic approach, molecular structure, charge carrier mobility and morphology of blended film and their correlation with the photovoltaic J-V characteristics in details.

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Schottky Barrier Free Contacts in Graphene/MoS2 Field-Effect-Transistor

  • Qiu, Dongri;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.209.2-209.2
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    • 2015
  • Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

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Effects of Operational Condition and Sea States on Wave-Induced Bending Moments of Large Merchant Vessels (운항조건 및 해상상태가 대형 화물선의 파랑 중 굽힘모멘트에 미치는 영향)

  • 김동문;백점기
    • Journal of the Society of Naval Architects of Korea
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    • v.40 no.5
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    • pp.60-67
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    • 2003
  • For risk or reliability assessment of ship structures against particular hazardous situations such as total loss or sinking due to hull girder collapse, the short-term based response analysis rather than the long-term response analysis is required to determine wave-induced bending moments when the ship encounters a storm of specific duration and with a specified small encounter probability. In the present study, the effects of operational condition and sea states on wave-induced bending moments of large merchant vessels are investigated. A series of the short-term response analyses for a hypothetical VLCC and a Capesize bulk carrier (CSBC) are carried out with varying operational condition and sea states which include ship speed, significant wave height and wave persistence time, using the linear-strip theory based program ABS/SHIPMOTION and the MIT sea-keeping tables. The computed results are also compared with the IACS design formula predictions. The results and insights developed from the present study are summarized.

Study on the Development of Welding Information System for CIMS in Shipbuilding (조선 CIMS를 위한 용접정보 시스템 개발에 관한 연구)

  • 강병윤;박주용;엄동석
    • Journal of Welding and Joining
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    • v.14 no.6
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    • pp.119-130
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    • 1996
  • Welding is one of the important technologies in shipbuilding industry. Automation and productivity promotion of welding contribute to the cost saving of ship production. The quality and productivity of welding are dependent on the quality and suitability of technical information supplied by engineering parts. This paper describes the research results of welding information system for ship. The system can be used for the development of CIMS for shipbuilding. For this work, the welding information related to the ship Production were analyzed in detail. Object-oriented technique is applied to represent the complex and various welding information. To process the extend amount of the welding information of ship, database system was constructed. A pilot system for the bulk carrier ship was developed and can be used with ease by programming of event-driven method and implementaion of graphical user interlace.

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A Robust Ship Scheduling Based on Mean-Variance Optimization Model (평균-분산 최적화 모형을 이용한 로버스트 선박운항 일정계획)

  • Park, Nareh;Kim, Si-Hwa
    • Journal of the Korean Operations Research and Management Science Society
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    • v.41 no.2
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    • pp.129-139
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    • 2016
  • This paper presented a robust ship scheduling model using the quadratic programming problem. Given a set of available carriers under control and a set of cargoes to be transported from origin to destination, a robust ship scheduling that can minimize the mean-variance objective function with the required level of profit can be modeled. Computational experiments concerning relevant maritime transportation problems are performed on randomly generated configurations of tanker scheduling in bulk trade. In the first stage, the optimal transportation problem to achieve maximum revenue is solved through the traditional set-packing model that includes all feasible schedules for each carrier. In the second stage, the robust ship scheduling problem is formulated as mentioned in the quadratic programming. Single index model is used to efficiently calculate the variance-covariance matrix of objective function. Significant results are reported to validate that the proposed model can be utilized in the decision problem of ship scheduling after considering robustness and the required level of profit.

Manufacturing Process Effect on Fatigue Properties for Copper Thin Film (구리박막의 피로특성에 관한 제조공정의 영향)

  • An, Joong-Hyok;Park, Jun-Hyub;Kim, Yun-Jae
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.1783-1786
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    • 2007
  • The copper film coated by Sn is often used in various applications such as LCD, Mobile Phone and etc. Especially, when the film is used as tape carrier package(TCP) of LCD panel, the film is repeatedly applied by mechanical or(and) thermal stress and then is often failed. Therefore, to guarantee the reliability of the electrical devices using the film, the tensile and fatigue characteristics of the film are important. In this study, to obtain the tensile and fatigue characteristics of the film, the specimen was fabricated by etching process to make a smooth specimen of 2000 ${\mu}m$ width, 8000 ${\mu}m$ length and 15.26 ${\mu}m$ thickness. The 2 kinds of specimen were fabricated by other manufacturing process. These specimens had values of Young's modulus(80.2GPa) lower than literature values(108${\sim}$145GPa) for bulk values, but had high values of the yield and ultimate strength as 317MPa and 437MPa, respectively. And fatigue test of load-control with 20Hz frequency was performed.

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Pile-up of phosphorus emitters using thermal oxidation (열산화법에 의한 phosphorus 에미터 pile-up)

  • Boo, Hyun Pil;Kang, Min Gu;Lee, KyungDong;Lee, Jong-Han;Tark, Sung Ju;Kim, Young Do;Park, Sungeun;Kim, Dongwhan
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.122.1-122.1
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    • 2011
  • Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

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Sputtering Deposition of $CuInSe_{2}$ and $CuInZnSe_{2}$ Thin Films using Mixture Binary Chalcogenide Powders

  • Wibowo, Rachmat Adhi;Guk, Jun-Pyo;Kim, Gyu-Ho
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.257-260
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    • 2007
  • In this study, $CuInSe_{2}$ (CISe) and $CuInZnSe_{2}$ (CIZSe) thin films were prepared on Corning 1737 glass by radio frequency (RF) magnetron sputtering from binary chalcogenide mixed powder targets. The targets were initially prepared by mixing appropriate weights of CuSe, InSe powder and various ZnSe contents. From the film bulk analysis result, it is observed that Zn concentration in the films increases proportionally with the addition of ZnSe in the sputtering targets. Under optimized conditions, CISe and CIZSe thin films grow as a chalcopyrite structure with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^{4}$ $cm^{-1}$. An increasing of optical band gap from 1.0 eV (CISe) to 1.25 eV (CIZSe) is found to be proportional with an increasing of Zn concentration as expected. All films have a p-type semiconductor characteristic with a carrier concentration in the order of 1014 $cm^{-3}$, a mobility about $10^{1}$ $cm^{2{\cdot}-1}{\cdot}s^{-1}$ and a resistivity at the range of $10^{2}-10^{6}$ W${\cdot}$m.

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