• Journal of the Korean institute of surface engineering
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• v.44 no.1
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• pp.13-20
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• 2011

This study investigated the high temperature oxidation behavior of Fe-22%Cr-5.8%Al alloy and the oxidation kinetics of the alloy were discussed. Bulk samples were prepared by VAM (vacuum arc melting) and hot forging. High temperature oxidation testes were isothermally conducted up to 100 hours in 79%$N_2$+21%$O_2$ environment at three different temperatures ($900^{\circ}C$, $1000^{\circ}C$, $1100^{\circ}C$). The weight gain was measured after oxidation according to oxidation time (2, 4, 6, 8, 10, 15, 20, 25, 30, 60, 80, 100 hours). The weight gain significantly increased with increasing oxidation temperature. As the temperature increased, the oxidized samples showed sequential formation of $Al_2O_3$, Cr-rich oxide, Fe-rich oxide. The activation energy of high temperature oxidation was obtained as 306.63 KJ/mol. $Al_2O_3$ were developed on the surface in the early stage of oxidation, representing protective role of oxidation. However, Fe-based and Cr-based oxides leaded to breakaway of oxide layer, thus resulted in the significant increase of additional oxidation.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.204-207
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• 2004

In this work, we present the electrochemical properties of Al bipolar plate, which can be re-searched for the application of PEMFC system. Bulk resistance of the plate was measured with a four-point probe method. The electrical conductivity of noble metal coated Al plate was 4.40 x 10$^4$ S/cm. On the other hand, the electrical interfacial resistance of the noble metal coated Al plate valued at 0.15 mΩ-$\textrm{cm}^2$ and that of graphite was 0.26 mΩ-$\textrm{cm}^2$ under the holding pressure of 140 N/$\textrm{cm}^2$ at the applied current of 5 A. And the performance of Al bipolar plate for PEMFC was evaluated at various conditions. The single cell performance was more than 0.43 W/$\textrm{cm}^2$ (0.47 Wig) for noble metal coated Al bipolar plate at 5$0^{\circ}C$ under atmospheric pressure in external humidified hydrogen and oxygen condition. As the present results, we could show the results that the noble metal coated Al bipolar plates were favorable in the aspect of electrical properties compared with those of the commercialized resin-impregnated graphite plates.

• Journal of the Korean Chemical Society
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• v.55 no.1
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• pp.81-85
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• 2011

$V_{0.9}Sb_{0.1}O_x$ systems, bulk and deposited on different supports (five types of $\gamma$-aluminas, $\alpha$-alumina, silica-alumina, silica gel, magnesium oxide), have been tested in the oxidative dehydrogenation (ODH) of iso-butane. Catalytic performance of VSb oxides has shown to be highly dependent on the support and the nature of the support decreasing in a series: $\gamma$-$Al_2O_3$ > $\alpha$-$Al_2O_3$ > Si-Al-O > $SiO_2$ $\approx$ MgO $\gg$ unsupported. Variation of the V-Sb-O-loading in the studied range of coverage (0.5-2 theoretical monolayer) only slightly influences the catalysts' activity and selectivity. The best catalytic performance of $\gamma$-alumina-supported $V_{0.9}Sb_{0.1}O_x$ systems can be explained by the optimal surface interaction between support and supported components resulting in the formation of well-spread amorphous active $VO_x$-component with vanadium in a high oxidation state.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Polymer(Korea)
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• v.33 no.3
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• pp.191-197
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• 2009

We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

• Imaging Science in Dentistry
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• v.51 no.3
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• pp.261-269
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• 2021

Purpose: The aim of this study was to evaluate the radiopacities of various types of restorative materials with different thicknesses compared with enamel, dentin, and aluminum. Materials and Methods: Four bulk-fill resins, 2 hybrid ceramics, 2 micro-hybrid resin composites, 6 glass ionomer-based materials, 2 zinc phosphate cements, and an amalgam were used in the study. Twelve disk-shaped specimens were prepared from each of 17 restorative materials with thicknesses of 1 mm, 2 mm, and 4 mm (n=4). All the restorative material specimens with the same thickness, an aluminum (Al) step wedge, and enamel and dentin specimens were positioned on a phosphor storage plate and exposed using a dental X-ray unit. The mean gray values were measured on digital images and converted to equivalent Al thicknesses. Statistical analyses were performed using 2-way analysis of variance and the Bonferroni post hoc test(P<0.05). Results: Radiopacity was significantly affected by both the thickness and the material type (P<0.05). GCP Glass Fill had the lowest radiopacity value for samples of 1 mm thickness, while Vita Enamic had the lowest radiopacity value for 2-mm-thick and 4-mm-thick samples. The materials with the highest radiopacity values after the amalgam were zinc phosphate cements. Conclusion: Significant differences were observed in the radiopacities of restorative materials with different thicknesses. Radiopacity was affected by both the material type and thickness.

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.771-782
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• 1989

Synthesis of $\beta$-Sialon powder was attempted with carbothermal reduction of porous glass. The porous glass was prepared by heat and hydrothermal treatments of 9.32 Li2O.46.5B2O3.37.2SiO2.6.98Al2O3 glass. Carbon pyrolyzed from propane gas was deposited on the porous glass, thereafter activated carbon was added as reducing agents. The synthesized $\beta$-Sialon powder was pressureless sintered at 175$0^{\circ}C$ for 1hr in N2 atmosphere. The characterization of the $\beta$-Sialon powder was performed with XRD, BET, SEM and particle size analysis. The sinterability and mechanical properties of the sintered bodies were investigated in terms of bulk density, M.O.R., fracture toughness, morphology of microstructure and etc. The reduction effect of deposited carbon was better than that of activated carbon mechanically added. The formation of SiC was precominant over that of Si2ON2 and $\beta$-Sialon owing to low partial pressure of N2 inside the pore, wehreas on the surface of porous glass the formation of Si2ON2 and $\beta$-Sialon were predominant. Thereafter, SiC reduced unreacted glass to be $\beta$-Sialon. Single phase of $\beta$-Sialon(Z=1.92) was obtained from PGA porous glass having the largest pore radius by the simultaneous reduction and nitridation method at 145$0^{\circ}C$ for 5hrs. The bulk density, M.O.R., and KIC of the sitered body are 3.17g/cc, 434.4MPa and 4.1MPa.m1/2, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.703-706
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• 2002

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1865-1867
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• 2005

Film bulk acoustic resonator (FBAR) devices which adopt an air-gap type (metai/AlN/metal/air/substrate) configuration are fabricated by a novel process. The newly fabricated resonator doesn't employ any supporting layer below it. FBAR devices with the air-gap type are also fabricated using the conventional method. The frequency response characteristics of all the devices fabricated are measured and compared, in terms of the kinds of top and bottom electrode materials. The results show that the better device performance of FBAR devices can be achieved by employing the proposed process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.69-69
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• 2001

We report a study of the nitriding of the martensitic grade of stainless steel AKSK 420 in a low-pressure rl discharge using pure nitrogen. Much studied samples of the austenitic grade AISI 304 were treated at the same time to provide a comparison. With a treatment time of 4.0 h at $400^{\circ}C$, the nitrogen-rich layer on MSK 420 is 20pm thick and has a hardness about 4.3 times higher than that of the untreated material. The layer thickness is much greater than that obtained on AISI 304 under identical treatment conditions, reflecting the different Cr content of the two alloys. The alloy AlISI 420 is more susceptible than AISI 304 to the formation of CrN and ferrite, and this has a deleterious effect on the hardnes, gain. Below the temperature at which CrN forms, the treated layer retains its martensitic structure, but with a larger lattice parameter than the bulk, a phase that we term expanded martensite, by analogy with the situation with austenitic stainless steel. The fact that the treated layer retains a martensitic structure is interesting in view of previous evidence that nitrogen is an austenite stabilizer.