• 한국세라믹학회지
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• 제29권7호
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• pp.511-516
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• 1992

In this study, SiC powder and Si powder were used as the raw materials. Mixture was prepared with addition of Al2O3 and Fe2O3 at 0.1~0.5wt% respectively. After this step, the mixture was pressed and nitrided for 30 hrs at 140$0^{\circ}C$ under NH3-N2 atmosphere. Mechanical properties of sintered specimens were investigated from measurement of porosity, bulk density and three point bending test. nitration reaction extent was observed at the change of mass before and after reaction, and the microstructure and the change of $\alpha$-Si3N4 and $\beta$-Si3N4 were observed by XRD and SEM. In the current work, the results are as follows 1. When Fe2O3 added, the nitridation increased with the content of Fe2O3, and the bending strength was increased from 0.1 wt% to 0.3 wt%, and decreased to 0.5 wt%. 2. When Al2O3 added, the nitridation and the bending strength increased little by little with the content of Al2O3 3. The bending strength of the specimen added with Fe2O3 were higher than that with Al2O3. Because the specimens contained Fe2O3 had much more the whisker type crystal of Si3N4 contributing to strength than contained Al2O3.

• 대한기계학회논문집A
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• 제36권6호
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• pp.591-598
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• 2012

본 연구에서는 CNC선반을 사용하여 다양한 공구재질과 절삭속도에서 벌크금속유리(BMG)의 절삭 특성을 평가하였다. 선반가공시 Zr-기 BMG의 표면거칠기와 칩 형상을 관찰하여 가공조건에 따른 절삭력과 공구툴 마모 등 절삭 특성을 비교 검토하였다. 직경 8 mm $Zr_{50}Cu_{40}Al_{10}$ BMG시험편의 절삭에는 네 종류의 절삭공구를 사용하였다. 가공후 BMG 시험편의 표면거칠기를 측정하였고, 표면거칠기에 미치는 공구 회전속도의 영향을 조사하였다. 회전속도가 빠를수록 낮은 표면거칠기를 나타내었고, 공구 재질의 영향도 크게 나타났다. 칩 형상의 관찰 결과, 산화를 일으키지 않은 BMG 칩은 단열 전단띠 발생과 함께 나선형상의 형태를 나타내지만, 산화를 일으킨 칩은 국부적으로 용융과 함께 칩들이 뭉치는 현상을 나타내었다. BMG시험편을 가공하는 동안 발생한 절삭력은 TiN-WC에서 가장 큰 값을 나타내고, PCD가 그 다음, Cermet툴에서 가장 작은 값을 나타내었다.

• 한국분말재료학회지
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• 제11권4호
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• pp.308-313
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• 2004

An experimental study on the combustion of superfine aluminum powders (average particle diameter, a$_{s}$: ∼0.1 ${\mu}{\textrm}{m}$) in air is reported. The formation of aluminum nitride during the combustion of aluminum in air and the influence of the combustion scenario on the structures and compositions of the final products are in the focus of this study. The experiments were conducted in an air (pressure: 1 atm). Superfine aluminum powders were produced by the wire electrical explosion method. Such superfine aluminum powder is stable in air but once ignited it can burn in a self-sustaining way due to its low bulk: density (∼0.1 g/㎤) and a low thermal conductivity. During combustion, the temperature and radiation were measured and the actual burning process was recorded by a video camera. Scanning electron microscopy (SEM), X-ray diffraction (XRD) and chemical analysis were performed on the both initial powders and final products. It was found that the powders, ignited by local heating, burned in a two-stage self-propagating regime. The products of the first stage consisted of unreacted aluminum (-70 mass %) and amorphous oxides with traces of AlN. After the second stage the AlN content exceeded 50 mass % and the residual Al content decreased to ∼10 mass %. A qualitative discussion is given on the kinetic limitation for AlN oxidation due to rapid condensation and encapsulation of gaseous AlN.N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.226-227
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• 2009

FBAR(Film Bulk Acoustic Resonator)는 높은 민감도와 실리콘기판을 활용한 집적화의 가능화 때문에 최근 부각되고 있는 바이오센서이다. 특히 AlN 압전층을 이용한 FBAR는 배향특성이 우수하고 높은 음향속도를 가지는 장점을 가지고 있다. 본 논문에서는 AlN의 Full Width at Half Maximum(FWHM)값이 $0.23^{\circ}$인 우수한 (002) 방향의 FBAR를 제작한 후 상부 전극위에 Anti-CEA와 CEA를 흡착하여 공진주파수의 변화를 조사하였다. 그 결과 Anti-CEA 흡착 후와 CEA 흡착 후 공진주파수의 변화는 각각 832.875KHz, 941.748KHz이였으며, 각각 3496 $Hz{\cdot}cm^2/ng$, 3482 $Hz{\cdot}cm^2/ng$의 높은 민감도를 확인하였다.

• 센서학회지
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• 제23권3호
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• pp.207-210
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• 2014

$TiO_2$ oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/$TiO_2$ gas sensor is mainly used to detect $H_2$, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/$TiO_2$ in room temperature through Al-doping. Pd/$TiO_2$ was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/$TiO_2$ by thermal diffusion and enhanced hydrogen sensing response. $TiO_2$ nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in $TiO_2$ was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/$TiO_2$ bulk. The gas sensing test was performed with $O_2$, $N_2$ and $H_2$ gas ambient. Pd/Al-doped $TiO_2$ did not response $O_2$ and $N_2$ gas in vacuum except $H_2$. Finally, the normalized resistance ratio ($R_{H2on}/R_{H2off}$) of Pd/Al-doped $TiO_2$ increases about 80% compared to Pd/$TiO_2$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권3호
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• pp.217-221
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• 2004

[ $CO_2$ ]laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 ${\mu}m.min^{-1}$ were obtained for pulse energies of 7.5-30 mJ over diameters of 50·500 ${\mu}m$ with a Q-switched pulse width of ${\sim}30$ nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 ${\mu}m/min$) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/AlN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate subsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.

• 한국결정성장학회지
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• 제28권1호
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• pp.51-56
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• 2018

PVT법으로 성장된 AlN 단결정의 표면 평탄화 최적화 하기 위하여 기계적 연마 후 $SiO_2$ slurry를 이용한 CMP 공정을 진행하였고 이에 따른 표면 형상, slurry 변화에 따른 가공 특성을 분석하였다. Slurry의 pH가 표면 연마 과정에 미치는 영향을 알아보기 위해 $SiO_2$ slurry의 pH를 조절하였으며, 제타전위측정기를 통해 각각의 pH에 따른 zeta potential의 영향과 MRR(material removal rate) 결과를 비교하였으며, 최종적으로 원자간력 현미경(atomic force microscope)을 이용한 표면 거칠기 RMS(0.2 nm)를 얻을 수 있었다.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• Journal of applied mathematics & informatics
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• 제8권3호
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• pp.943-957
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• 2001

In this paper, we propose an efficient encryption algorithm, without exchanging session keys of a symmetric cryptosystem. The proposed scheme, called as the FAKE(Fast Asymmetric Key Encryption), first scrambles an entire input message and then encrypts small parts of the scrambled message using an asymmetric key encryption scheme. We use the all-or-nothing transform based on the hash function as a scrambling function, which was proposed by Shin, et al. Furthermore, the proposed scheme can additionally provide a digital signature service with only small overhead.

• Advances in nano research
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• 제2권3호
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• pp.157-172
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• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.