• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.8
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• pp.126-132
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• 2010

This paper presents dielectric characteristics of $N_2$ gas under impulse voltages in a quasi-uniform electric field gap. The experiments were carried out at the test gap applied by the 1.2/50[${\mu}s$] lightning impulse voltage, 180/2500[${\mu}s$] switching impulse voltage, 500[ns]/1[MHz] very fast transient overvoltage(VFTO). The gap separation of sphere-to-plane electrodes was 14[mm] and the electric field utilization factor was about 71.2[%]. The gas pressure ranges from 0.2 to 0.6[MPa]. As a result, the electrical breakdowns are occurred by streamer discharge. Breakdown voltages are linearly increased with the gas pressure and the highest breakdown voltage is appeared under the VFTOs having fast rising time. Breakdown voltages under the positive impulse voltages were higher than those under the negative ones, and also the time to breakdown in the positive polarity is longer than that in the negative polarity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2234-2237
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• 2008

Approximate equations for cylindrical breakdown voltages of planar pn junctions are proposed and verified. The equations show good agreement with the Baliga's results for $r_{j}/Wpp{\leqq}0.3$ and with numerical results for $r_{j}/Wpp{\geqq}0.3$ within 1% error. Sensitivity of the breakdown voltage with respect to the doping concentrations is successfully derived using the approximate equations. The sensitivity formula can be utilized in the area of tolerance design of power semiconductor devices.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.117-122
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• 2004

In order to help understand the growth mechanisms of demetallization due to self healing on a metallized polypropylene film (MPPF), several types of defects affecting the breakdown of capacitor dielectrics were made. The breakdown voltages with dielectric thickness were measured at self healing and the demetallized area was evaluated for all of the self healing events. The shapes and growth processes of the demetallized spots on the dielectrics were investigated. As a result, self healing mainly occurred at pin tips, wrinkle sides, and junctions of the wrinkles, and the breakdown voltages strongly depended on the thickness of the dielectrics. In addition, the demetallized area due to self healing was governed by the breakdown voltage and it has been mainly grown by some factors; the applied voltage; the consequent self healing events taking place at the circumference of the original self healing spots; the conductive paths formed by two or more self healing spots and by the consequent self healing spots.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1436-1437
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• 2007

This paper presents the experimental results of the dielectric characteristics with temperature changes under highly non-uniform electric field in $SF_6$ gas. The impulse preliminary breakdown developments were investigated by the measurement of predischarge current and breakdown voltage. As a result, the first stremer corona is initiated at the tip of needle electrode, and bridges the test gap. Also the first stremer corona onset and breakdown voltages the negative polarity was much higher than that in the positive polarity in same temperature. In addition, the varition of temperature have a little effect on the positive polarity. On the other hand, in some cases negative polarity corona onset and breakdown voltages increased with increasing a high temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.122-128
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• 1994

Studies on treeing phenomena have depended on the visual measurement using optical microscope. In the visual measurement, it is difficult to analyze the treeing in real time because voltages are applied discontinuously and impossible to calculate the deterioated area by treeing. Only tree type and length are studied. In this paper, image processing is introduced and voltages are applied continuously. The tree length and area are calculated in real time from tree inception to breakdown. Growing characteristics about tree types are compared for the normalized breakdown time.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.05a
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• pp.57-60
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• 2005

This paper describes the experimental results of the pre-breakdown phenomena in $SF_6/CO_2$ mixtures under non-uniform electric fields caused by positive and negative lightning negative voltages. $SF_6/CO_2$ mixtures have an advantage of an environmental aspect and cost reduction, and safety aspects. In order to analyze the pre-breakdown processes in $SF_6/CO_2$ mixtures stressed by impulse voltages, pre-breakdown current and luminous signals were measured by a shunt and a photo-multiplier tube, respectively. Dielectric strengthes of $SF_6/CO_2$ mixtures were investigated. Additionally, characteristics of discharge channels were observed by high speed cameras and the physical properties were discussed. The pre-breakdown propagates with a stepwise process. The in to breakdown from the corona onset point in positive polarity was shorter than that in negative polarity. The time intervals of positive leaders are shorter than those of negative leaders, and the path of positive leader channel is zigzag.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.2
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• pp.85-90
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• 1998

This paper describes the breakdown characteristics of GIS by the free conducting particles under alternating voltage. If the conducting particles are present within the GIS, they can cause decrease in breakdown voltages. Various materials and sizes of free conducting particles were used to study the liftoff electric field and breakdown voltage. The measured lift-off electric fields were compared with the calculated ones for copper, steel and aluminium wire-type conducting particles. As an experimental result, it is shown that the breakdown voltages of the GIS chamber with conducting particles were lower than those without conducting particles, and were markedly dependent on the particle material and the particle sizes. Free conducting particles are important factor in particle-triggered breakdown of the GIS.he GIS.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.533-540
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• 2000

Lightning impulse $(1.2/44[\mus])$ and damped oscillating impulse $(Osc./44[\mus])$ : 0.83[MHz]) breakdown characteristics in sulphur-hexafluoride/nitrogen (SF6-N2) mixtures were investigated. The predischarge currents were observed to clarify the breakdown mechanism. th experiments were carried out under nonuniform electric fields disturbed by a needle-shaped protrusion whose length and diameter are 10[mm] and 1[mm] at total gas pressure up to 0.5[MPa] with nitrogen concentrations varying from 5 to 20[%] in the mixture. The electrical breakdowns of SF6-N2 mixtures for both the positive and negative polarities develop with steplike pulses in leader mechanism and the breakdown voltage -time (V-t) characteristics were affected by the space charge. The voltage-time curves for the negative oscillating impulse voltage were extended over the longer time range. The minimum breakdown voltages for the negative lightning and oscillating impulse voltage were higher than those for the positive ones. in particular the positive breakdown voltages were independent of the gas pressure.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.599-606
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• 2001

In this paper, the ac breakdown characteristics of pure Ar, Kr and $N_2$ gas with gas pressure range of 58.8-137.3[kPa] under uniform and non-uniform fields were investigated, and the measured values were compared with those In Ar/$N_2$ and Kr/$N_2$ gas mixtures with pressure varying. Summarizing the experimental results, the breakdown voltages of Pure $N_2$gas, under uniform and non-uniform fields, were increased about 4.8 and 1.1 times than those of pure Ar gas, and about 4.4 and 1.2 times than those of pure Kr gas, and the ac breakdown voltage increased with the pressure increasing. The breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of Pure $N_2$ gas. In case of Ar(85%)/$N_2$ (15%) and Ar(70%)/$N_2$ (30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$ (15%) and Kr(70%)/$N_2$ (30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times. Corona inception voltage of Kr(70%)/$N_2$(30%) gas mixtures under non-uniform fields were increased about 1.28 times than those of Ar(70%)/$N_2$ (30%) gas mixtures. In case of practical incandescent lamps, luminous and lifetime of Kr(70%)/$N_2$ (30%) gas mixtures were increased about 1.15 and 1.21 times than those of Ar(70%)/$N_2$ (30%) gas mixtures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.345-348
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• 2017

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.