• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 추계학술대회 논문집
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• pp.337-340
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• 2008

When high surge voltage invaded into the ground rod contacted with ground water, the ionization phenomena are happened in the water. Although some researchers have surveyed the ionization phenomena in soil, they have just analyzed the variation of the ground resistance. The most important role of the ground rod is to elect human beings from potential rise and to dissipate energy to the earth safely. In this wort we presented the method evaluating the potential reduction and energy dispersion. Also we analyzed theses factors as a function of charging voltages at the water resistivity of $50\;{\Omega}{\cdot}m$ using the Matlab Program. As a result the ground rod potential was reduced to 38 kV by ionization just below breakdown voltage. The energy more than half of the total injected energy was dispersed through the grounding electrode caused due to ionization.

• 한국초전도ㆍ저온공학회논문지
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• 제14권1호
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• pp.25-29
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• 2012

The novel type of cable under consideration is cooled by gaseous Helium at elevated pressure. Helium is known for having poor electric breakdown strength; therefore the dielectric capabilities of this type of cable must be tested under conditions similar to the envisaged operation. In order to study the dielectric performance we have designed and built a novel high pressure cryostat rated at 2.17 MPa which has been used for testing model cables of lengths of up to 1 m. The cryostat is an open system where the gas is not re-circulated. This allows maintaining a high purity of the gas. The target temperature range is between 40 K and 70 K. This substantially increases the critical current density of the HTS compared to 77 K, which is the typical temperature of cables cooled by liquid nitrogen. The cryostat presented allows for adjusting the temperature and keeping it constant for the time necessary to run a complete dielectric characterization test. We give a detailed description of the cryostat. Measurements of partial discharge inception voltages as well as the temperature distribution along the model cables as a function of time are presented.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.12-16
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• 2009

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper, we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450 V power MOSFET by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5{\times}10^{14}cm^{-3}$, size of $600{\um}m^2$ with $4.5\;{\Omega}$, and off-state leakage current below $50{\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods are meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• Journal of Plant Biology
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• 제29권1호
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• pp.1-10
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• 1986

Intra- and inter-specific protoplast fusion of tobacco (Nicotiana tabacum cv. Virginia 115) and pea (Pisum sativum cv. Sparkle) were carried out in highly inhomogeneous alternating electric fields. Under the electric field of alternating current (AC, sine wave), 600 V/cm and 800 kHz for tobacco protoplast, and 600 V/cm and 700 kHz for pea protoplasts, the protoplasts were aggregated in pearl chains. Intra-specific protoplast fusions were most effectively induced within the aggregates of tobacco and pea, respectively, by the additional application of a single high field pulse of direct current (DC, square wave) at 1 kV/cm for 50 $mutextrm{s}$. Inter-specific fusions between protoplasts of the two plants were most effectively induced in the electric field of 600 V/cm and 700 kHz, and square wave pulse at 1 kV/cm for 50 $mutextrm{s}$. The duration of the pulse over the electrical breakdown voltages was simulated from 1 to 100 $mutextrm{s}$ in both tobacco and pea protoplast. The yield of the electrofusion products was significantly high (above 60%), compared with that (20%) of the standard fusion method by polyethylene glycol (PEG) 4,000, and the viability of electrofused protoplasts was above 70%, but that of PEG-fused protoplasts 8~16%, when determined by Evan's blue staining method.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.387-392
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• 2018

Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

• 조명전기설비학회논문지
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• 제25권8호
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• pp.30-38
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• 2011

This paper proposes a new intelligent diagnosis equipment for the partial discharge, which keeps deteriorating the insulating materials inside electric machineries, ultimately leading to electrical breakdown. In order to simulate experimentally the partial discharge inside the electric machinery, the tip-to-plate, the sphere-to-plate, the sphere-to-sphere and the plate-to-plate electrodes are used respectively, of which the gaps are 1[mm], 3[mm] or 5[mm] and the applied voltages are 3[kV], 5[kV] or 7[kV]. Ceramic coupler sensor and FIR digital filter are used to measure the partial discharge and the artificial neural network is used for the deterioration diagnosis of the electric machinery. The microprocessor of PD diagnosis equipment is DSP (TMS320C6713) with FPGA (Cyclone II). The results of the real-time and on-line experiments performed with the developed equipment are also explained.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.669-673
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• 2011

The charged particle type display is a kind of the reflectivity type display and shows an image by absorption and reflection of external light source, which has keep an image without additional electric power because of bistability. In this paper, we made a device whose cell gap is $56\;{\mu}m$ and also analyzed driving and memory characteristics by applied driving voltages. As a result, we found that the driving voltage and memory effect depend on q/m(charge to mass ratio) of charged particle. In this case of breakdown voltage, the devices showed degradation of reflectivity and memory effect due to irregular movement of overcharged particles. In addition, contrast ratio of the device varies with memory effect. Thus, we consider that device needs uniform q/m for improvement of electric and optical properties and memory effect.

• Transactions on Electrical and Electronic Materials
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• 제18권3호
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• pp.151-154
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• 2017

In this article, we investigated the various influencing factors that degraded the lifetime of suspension insulators in 154 kV transmission lines, and showed the possible solutions to avoid such breakdowns. With respect to achieve safety, reliability and aesthetical considerations, the characteristics of transmission and distribution network power cables should be improved. Suspension insulators are particularly important to study, as they have developed to be the main component of transmission lines due to their ability to withstand the electrical conductivity of high-voltage power transmission. Suspension insulators are mostly made from glass, rubber and ceramic material due to their high resistivity. In Korea, porcelain suspension insulators are typically used in the transmission line system, as they are cheaper and more flexible compared to other types of insulators. This is effective from preventing very high and steep lightening impulse voltages from causing the breakdown of suspension insulators used in power lines. Other influential factors affect the lifetime of suspension insulators that we studied include temperature, water moisture, contamination, mechanical vibration and electrical stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.505-506
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• 2006

PD(partial discharge) occurred from variable PD sources in air may be the cause of breakdown in high voltage equipment which affect huge outage in power system. Identification and localization of PD sources is very important for engineer to cope with huge accident beforhand. PD phenomena can be detected by acoustic emission sensor or electromagnetic sensor like antenna. This paper has investigated the identification method using PCA(principal component analysis) for the PD signals from variable PD sources, for which the electric field distribution and PD inception voltages were simulated by using commercial FEM program. PD signals was detected by ultra wideband antenna. Their own features were extracted as the frequency coefficients transformed with FFT(fast fourier transform) and used to obtain independent pincipal components of each PD signals.

• Journal of Semiconductor Engineering
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• 제3권2호
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• pp.161-167
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• 2022

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.