• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.86-92
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• 2009

We fabricated the charged particle type display using opposite-charged two toner particles. The particles were composed of polymer, colorant($TiO_2$, carbon black) and external additives(nano-sized silica and so on). In fabrication process we controlled the putting layers of this toner particles on the inner panel. To get the effect of number of layers ($1{\sim}3$), we measured the threshold, driving and breakdown voltages, reflectivity, viewing angle, and color characteristics using RT-300 anisotropic scattering system. We ascertained that these voltages are increased with increasing of layers of particles. Cell gap between electrodes must be enlarged with increment of layers and the size of particles. The lumping phenomena of particles at near of the rib observed by optical system with same CIE values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.350-350
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• 2010

Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from $6\;{\mu}m$ to $10\;{\mu}m$) and the channel width (from $0.9\;{\mu}m$ to $1.2\;{\mu}m$), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.840-845
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• 2017

In this paper, in order to investigate the lifetime of oil-paper insulation, specimens were artificially aged with thermal and electrical multiple stresses. Accelerated ageing factors and equivalent operating years for each aging temperatures were derived from results of tensile strengths for the aged paper specimens. Also, the evaluation for the multi-stress aged specimens were carried out through the measurement of impulse breakdown voltage at high temperature of $85^{\circ}C$. The lifetimes of the oil-paper insulations were calculated with the value of 66.7 for 1.0 mm thickness specimens and 69.7 for 1.25 mm thickness specimens throughout the analysis of impulse BD voltages using equivalent operating years, which means that dielectric strengths would not be severely decreased until the mechanical lifetime limit. Therefore, for the lifetime evaluation of the oil-paper insulation, thermal aging would be considered as a dominant factor whereas electrical degradation would be less effective.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1448-1450
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• 1994

The breakdown voltages of punchthrough-mode diodes with cylindrical junction are analytically calculated, The proposed method, which is based on th Gauss's law, estimates the lateral expansion of the depletion region as well as the electric field and the charge distribution. The proposed method is given in terms of epitaxial layer width, the epitaxial layer doping concentration, and curvature radius of the junction edge. The calculation results agree well with the MEDICI simulation results for various device parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.334-337
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• 1997

This paper describes dielectric characteristics of SF$_{6}$ gas stressed by the non-oscillating and oscillating impulse voltages in inhomogeneous fields disturbed by metallic protrusion. The breakdown voltage-time (V-t) characteristics and breakdown voltage-gas pressure (V-p) characteristics and their characteristics are statistically investigated with positive and negative very fast transient overvoltages. The experiments were carried out using a needle-to-plane gap geometry in the gas pressure ranges from 0.1 to 0.5 MPa. The gap separation gas 22 mm, and the needle-shaped protrusions were made of stainless steel 10 mm in length and 1.0 mm in diameter.r.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.7
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• pp.373-379
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• 2006

The low-voltage induction motors have been widely driven by IGBT PWM inverters, ever since it was used to apply variable speed drives. Recently, the insulation failures of the stator windings become critical problems due to the high ratio of dv/dt in IGBT PWM inverters. In this paper, the detailed insulation tests on the IGBT PWM inverter fed induction motor are carried out. Five different types of insulation techniques are used to ti induction motors. The change of the insulation characteristics such as partial discharge, AC current, capacitance, and dissipation factor are compared. respectively In addition, insulation breakdown tests using the high voltage pulse are performed, and corresponding breakdown voltages are analyzed.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2299-2301
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• 1999

In this work, experimental investigation was carried out for the breakdown characteristics of $SF_6$, $N_2$ and their mixtures under the uniform and non-uniform electric field, by use of HVAC and standard impulse testing voltages, as a function of different gas pressures from 1 atm to 5 atm. The results show that the dielectric strength of the $SF_6$ mixed in $N_2$ was significantly increased at its portion of 10%, which might imply that the optimum mixture of $SF_6$ for the HV switch gear could be proposed to be 10%.

• Journal of the Korea Society of Computer and Information
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• v.4 no.4
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• pp.133-139
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• 1999

Degradation diagnosis of XLPE insulated URD cables was accomplished through out new method, which was to be analyzed by non-electrical experiments and synthesized by degradation points. To supplement this method, It was also carried out using several electrical analyses. Tan$\delta$ had commonly a different tendency by means of temperature and frequency and also appeared higher at the outer part rather than inner part of insulator. PD-q increased generally in proportion to the applied voltage and showed regular patterns in relation to the thickness of insulator Breakdown voltages were measured and breakdown lifetimes were predicted appling for Weibull distribution function.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.10a
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• pp.253-255
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• 2008

This paper gives a basic data of the surface discharge characteristics for epoxy resin in Dry-Air. Used electrodes are needle to plane, sphere to plane and KS M3015 electrodes. With the changing electrodes in same condition, we can obtain different creeping lengthes, breakdown voltages and dielectric strengths, respectively. Dielectric strengths of Needle to plane electrodes are more higher than the others. Breakdown voltage and dielectric strength increase as the thickness of epoxy resin and creeping strength increase.