• 전기학회논문지
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• 제62권7호
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• pp.980-986
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• 2013

In this paper, the discharge characteristics of ac-type cylindrical discharge devices with diameters (D) in the $50{\sim}400{\mu}m$ range have been investigated numerically. The cylindrical devices have much lower breakdown voltages compared to the coplanar electrode structures. The breakdown voltage of the cylindrical structures increases with the decrease of diameters in $50{\sim}100{\mu}m$ range. In $100{\sim}200{\mu}m$ range, however, the breakdown voltage decreases slightly with the decrease of diameters. Also, as the diameter gets smaller, the electron heating efficiency is greatly improved.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.667-674
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• 2005

In this paper the gate overlap length of the LDMOST is optimized for obtaining longer device lifetime. The LDMOSI device with drift region is fabricated using the $0.25\;{\mu}m$ CMOS Process. The gate overlap lengths on drift region are $0.1\;{\mu}m,\;0.4\;{\mu}m\;0.8\;{\mu}m\;and\;1.1\;{\mu}m$, respectively. The breakdown voltages, on-resistances and hot-carrier degradations of the fabricated LDMOST devices are characterized. The LDMOST device with gate overlap length of $0.4\;{\mu}m$ showed the longest on-resistance lifetime, 0.02 years and breakdown voltage of 22 V and on-resistance of $23\;m\Omega{\cdot}mm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.40-42
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• 1989

In this paper, the theoritical breakdown characteristics of $N_2$and $SF_{6}$ in uniform field are studied by streamer criterion and the effective ionisation coefficients. Evaluation of the breakdown voltage for $N_2$and $SF_{6}$ has been done over following ranges: $N_2$: 100.0 $\leq$pd$\leq$10000.0(Torr cm) $SF_{6}$: 100.0$\leq$pd$\leq$6000.0(Torr cm) Computed values are compared with those of experiment. The results show a good agreement between the computed and the experimental values.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.63-66
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• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• 전자공학회논문지D
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• 제36D권4호
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• pp.70-76
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• 1999

Punchthroush 원통형 접합의 항복전압에 대한 해석적 모델을 에피층의 두께와 nonpunchthrough 원통형 접합의 항복시 임계공핍영역폭이 함수로 제안하였다. 이 해석적 모델에서의 모든 거리변수와 전계 및 전위식을 정규화된 형태로 사용하므로써 항복전압을 소자의 물리적 parameter에 관계없이 쉽게 결정할 수 있게 하였다. 제안된 모델의 계산결과를 2차원 소자 Simulation Program인 MEDICI를 사용하여 얻은 결과와 비교하여 매우 잘 일치함을 보였다.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.94-98
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• 2002

The Partial breakdown (PBD) and complete breakdown (BD) voltage characteristics in a composite insulation system of glass fiber reinforced plastics (GFRP) and liquid nitrogen are investigated to find the PBB and BD characteristics in solenoid type high temperature superconducting (HTS) coils at quench. The electrode system used is made from a coaxial spiral coil-to-cylindrical electrode with an insulation barrier and spacers, and is immersed in liquid nitrogen. A heater is mounted inside the coil electrode to generate boiling which occurs on quenched superconducting coils. The experimental results show that: (1) breakdown voltages are affected severely by the risetime of the applied voltage and the PBD inception voltage, (2) two kinds of BD mechanisms are found depending on the shape of the spacer, length of cooling channel and heater power.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1431-1433
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• 1996

Effective ionization coefficients for (100), (110) and (111) oriented gallium arsenide are extracted from the ionization coefficients far electrons and holes. Analytical formulas for the breakdown voltage of the GaAs Schottky rectifiers are derived by employing the ionization coefficients. The breakdown voltages obtained from our analytical model agree fairly well with the numerical results as well as the experimental ones reported in the range of $10^{14}\;cm^{-3}$ - $5{\times}10^{17}\;cm^{-3}$ doping concentrations.

• 전기의세계
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• 제28권4호
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• pp.39-46
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• 1979

The effective ionization coefficient in $SF_{6}$/$N_{2}$ mixtures was attempted to derive from the pure gases. Measurements of static breakdown voltage were made under the uniform field at pressures up to 4 bar in order to compare with the results obtained from this assumption. The relative performance of $SF_{6}$/$N_{2}$ mixtures to pure $SF_{6}$ was also investigated. The effect of surface roughness on discharge thresholds in $SF_{6}$/$N_{2}$ mixtures was calculated employing the simplified model and mesurements of breakdown voltages for a gap with an artificial protrustion were also made. The experimental results show that the effective ionization coefficient in gas mixtures can not be reliably estimated from the values measured for the pure gases. Therefore, basic parameters for $SF_{6}$/$N_{2}$ mixtures must be measured by investigation of the mixtures themselves. The relative performance of mixtures to pure $SF_{6}$ could be considered with the values of pR.

• 전기전자학회논문지
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• 제17권2호
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• pp.129-134
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• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.284-286
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• 1994

This paper describes the dielectric characteristics of $SF_6$ gas in non-uniform electric filed under lightning under lightning impulse and oscillating impulse voltages. The breakdown voltage-time characteristics and the breakdown voltage-pressure characteristics are measured over a pressure range extending from 0.1 to 0.5 [MPa] fur the coaxial electrode with a needle protrusion. The curvature radius of needle protrusion is 0.3[mm]. Also, the growth of the predischarge is simultaneously observed. As a result the polarity effect is pronounced, and the breakdowns voltage under the oscillating impulse voltage are higher than those under the lightning impulse voltage. It is found that the breakdown mechanism md predischarge phenomena ate closely related with the polarity and waveforms of the testing voltage.