• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.11
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• pp.41-46
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• 2015

This study was conducted to discover a substitute of $SF_6$ gas. $SF_6$ gas is widely used across the industries. Thanks to superior electrical properties, in particular, it has been commonly used in electrical industry. However, there have been a lot of studies on its serious effect on global warming. As a substitute of this synthetic gas, a mixture of dry air and $N_2/O_2$ was chosen in this study. In case of $N_2/O_2$, dielectric strength differs depending on the mixing ratio. This study examined dielectric breakdown and flashover after adjusting oxygen percentage in the dry air. This test was conducted in a quasi-uniform electric field depending on pressure, oxygen concentration and gas mixtures. The test results found that dielectric voltage and flashover voltage were the highest at a certain oxygen concentration. It is the results of this photoionization and electron attachment of oxygen.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.58-58
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• 2010

Carbon nanotubes (CNTs) have been extensively studied owing to its superior electrical properties, especially high electron mobility, which can be applied to various nano-electronic devices. However, synthesized CNTs have a mixture of metallic and semiconducting tubes so that their separation has been a tremendous obstacle to the practical application in electronic device structures. Among the different separation methods, electrical breakdown process to selectively burn out the metallic tubes has been quite successful though it needs additional process in the fabrication of device structures. Here, we report on the selective but not perfect growth of semiconducting nanotubes via use of diluted ferritin catalyst. SWCNTs were grown on ferritin catalyst, where the concentration of the ferritin solution was changed. In this way, we could fabricate the electrical breakdown free SWCNT thin film transistors on the flexible polyimide (PI) substrate. When we used the ferritin diluted by 1/2000, ~ 60 % of the SWCNT thin film transistors showed a perfect p-type behavior with an on/off current ratio higher than $10^5$ and on-current greater than $10^{-7}$ A. We will also discuss the photo-response of such formed thin film transistors over both visible and UV light.

• Fire Science and Engineering
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• v.23 no.3
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• pp.17-22
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• 2009

Epoxy powder is being in use for insulation materials widely. Especially, in cause of coating insulation can be caused electrical fire and explosion by Joul's heat. This study has been compared and examined around breakdown, arc discharge, and V-t about insulation of Epoxy powder. Also, it has been researched about insulation which is cause of electrical fire and its basic data. According to temperature change, sample KS was stable before the Tg to be about $8{\sim}10%$ decrease in the breakdown test. In case of V-t and arc discharge, it had been kept up suitable characteristic. Also, in case of electrical characteristic, sample KS has excellent capacity.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.11-15
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• 2018

The parts of equipment for semiconductor are protected by anodic aluminum oxide film to prevent corrosion. This study investigated contamination particle and cracking behavior of anodic oxidation in sulfuric acid containing cerium salt. The insulating properties of the sample were evaluated by measuring the breakdown voltage. It was confirmed that the breakdown voltage was about 50% higher when the cerium salt was added, and that the breakdown voltage after the heat treatment was 55% and 35% higher at $300^{\circ}C$ and $400^{\circ}C$, respectively. After heating at $300^{\circ}C$ and $400^{\circ}C$, cracks were observed in non cerium and cerium 3mM, and more cracks occur at $400^{\circ}C$ than at $30^{\circ}C$. The amount of contamination particles generated in the plasma is about 45% less than that of non-cerium specimens.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.413-417
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• 1995

In order to elucidate the electrical and mechanical properties of insulating paper, it is desirable to study the performances of tensile strength, dielectric constant, dielectric strength. In this work, we constructed the characteristics depending on change of fabrication condition, and these specimens were manufactured by hot press method. As a result, tensile strength was about 75MPa and breakdown was above 5 kV/mm at the minimum value.

• Proceedings of the Korean Statistical Society Conference
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• 2003.10a
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• pp.257-262
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• 2003

We introduce a new robust regression estimator, self-tuning regression estimator. Various robust estimators have been developed with discovery for theories and applications since Huber introduced M-estimator at 1960's. We start by announcing various robust estimators and their properties, including their advantages and disadvantages, and furthermore, new estimator overcomes drawbacks of other robust regression estimators, such as ineffective computation on preserving robustness properties.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.761-762
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• 1988

This paper is to investigate dielectric properties, dielectric breakdown strength, varing of interior organization and gelling point temperature as parameter of post-cure conditions of thermo-setting epoxy resin.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.541-546
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• 1990

The current conduction and dielectric breakdown properties of oxide grown on phosphorous-doped polysilicon have been investigated by means of the ramped I-V measurements. The effective barrier heights of polyoxide grown by different silicon deposition and oxidation conditions were calculated from the Fowler-Nordheim tunneling characteristic. The average critical fields were also obtained for each film. From the results, the high temperature oxided polyoxide grown on amorphous silicon film shows superior electrical characteristics comparing to the other films.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.4
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• pp.114-120
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• 2008

XLPE cable is using insulator for Cross Linked Polyethylene(XLPE), because insulation Performance is superior and easy comparatively. Need systematization of accident transaction for electrical equipment accident, It is no disposal standard for defect of manufacture and second to accidents. in this paper deals with the change of XLPE cable insulation. To understand the electrical properties of XLPE insulation. Made of XLPE block sample, Penetration fracture Sample and flashover sample. Ogura needles having tip radius of $10[{\mu}m]$ were inserted into each sample. AC voltage of 1[kV/sec] increased at 60[Hz] were apple to breakdown sample and flashover sample. AC voltages of 12[kV], 17[kV] at 60[Hz] were a lied to XLPE block sample. The electrical properties of specimens were measured were measured from initiation of tree and breakdown to their characteristics were analyzed.