• Title/Summary/Keyword: Bottom substrate

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Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET (나노급 CMOSFET을 위한 SOI기판에 도핑된 B1l을 이용한 니켈-실리사이드의 열안정성 개선)

  • Jung, Soon-Yen;Oh, Soon-Young;Lee, Won-Jae;Zhang, Ying-Ying;Zhong, Zhun;Li, Shi-Guang;Kim, Yeong-Cheol;Lee, Ga-Won;Wang, Jin-Suk;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.11
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    • pp.1000-1004
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    • 2006
  • In this paper, thermal stability of Ni-silicide formed on the SOI substrate with $B_{11}$ has been characterized. The sheet resistance of Ni-silicide on un-doped SOI and $B_{11}$ implanted bulk substrate was increased after the post-silicidation annealing at $700^{\circ}C$ for 30 min. However, in case of $B_{11}$ implanted SOI substrate, the sheet resistance showed stable characteristics after the post-silicidation annealing up to $700^{\circ}C$ for 30 min. The main reason of the excellent property of $B_{11}$ sample is believed to be the retardation of Ni diffusion by the boron and bottom oxide layer of SOI. Therefore, retardation of Ni diffusion is highly desirable lot high performance Ni silicide technology.

A Study on Robust Design of PCB for Package on Package by Numerical Analysis with Unit and Substrate Level to Reduce Warpage (수치해석을 이용한 Package on Package용 PCB의 Warpage 감소를 위한 Unit과 Substrate 레벨의 강건설계 연구)

  • Cho, Seunghyun;Kim, Yun Tae;Ko, Young Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.4
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    • pp.31-39
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    • 2021
  • In this paper, warpage analysis that separates PCB for PoP (Package on Package) into unit and substrate using FEM (Finite Element Method), analysis of the effect of layer thickness on warpage, and SN (Signal-to-Noise) ratio by Taguchi method was carried. According to the analysis result, the contribution of the circuit layer on warpage was very high in the unit PCB, and the contribution of the outer layer was particularly high. On the other hand, the substrate PCB had a high influence of the circuit layer on warpage, but it was relatively low compared to the unit PCB, and the influence of the solder resist was rather increased. Therefore, considering the unit PCB and the substrate PCB at the same time, it is desirable to design the PCB for PoP layer-by-layer structure so that the outer and inner circuit layers are thick, the top solder resist is thin, and the thickness of the bottom solder resist is between 5 ㎛ and 25 ㎛.

Comparison of Basal Physicochemical Changes of Reused Rockwool Substrate in Hydroponic Tomato Cultivation (수경재배 토마토 재사용 암면 배지의 기초 물리화학성 변화 비교)

  • Jae Seong Lee;Jong Hwa Shin
    • Journal of Bio-Environment Control
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    • v.33 no.2
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    • pp.114-119
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    • 2024
  • Rockwool substrate has superior physicochemical characteristics and is often used in crop cultivation. However, rockwool substrate has the disadvantages of high purchase cost and difficulty in disposal. Reuse of substrate can compensate for these disadvantages. Substrate must be disinfected and rehydrated during reuse, and various physicochemical changes during this process must also be considered. This study was to compare the physical properties of two types of rockwool substrates (reused and unused) and to evaluate the reuse potential of rockwool substrate by analyzing the chemical properties of the reused rockwool substrate during the rehydration process. The experiment on substrate physicochemical properties comparison was conducted from March to August 2023 using used rockwool substrates in tomato cultivation and unused rockwool substrates. Drainage time, drainage volume, and substrate weight were measured using load cells installed at the top and bottom of the irrigation monitoring system. The reused rockwool substrate weight and density were higher than those of the unused rockwool substrate, while the average drainage time after irrigation was 1.5 times longer for the reused rockwool than for the unused rockwool. The salinity concentration in different parts of the reused rockwool substrate was found to be lower in the reused rockwool substrate compared to the unused rockwool substrate. The electrical conductivity of the drainage was at its peak at the beginning of the drainage and decreased exponentially as the drainage volume increased. Change in electrical conductivity of the drainage over the irrigation time showed an exponential decay pattern. Through the experiments, the potential reusability of the rock wool substrate was assessed by conducting a comparative analysis of its physicochemical properties.

Fabrication of a Bottom Electrode for a Nano-scale Beam Resonator Using Backside Exposure with a Self-aligned Metal Mask

  • Lee, Yong-Seok;Jang, Yun-Ho;Bang, Yong-Seung;Kim, Jung-Mu;Kim, Jong-Man;Kim, Yong-Kweon
    • Journal of Electrical Engineering and Technology
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    • v.4 no.4
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    • pp.546-551
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    • 2009
  • In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

Fabrication of AIN-based FBAR Devices by Using a Novel Process and Characterization of Their Frequency Response Characteristics in terms of Various Electrode Metals (새로운 공정을 이용한 AIN 체적 탄성파 소자의 제작 및 다양한 금속 전극막에 따른 주파수 응답 특성 분석)

  • Kim, Bo-Hyun;Park, Chang-Kyun;Park, Jin-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.5
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    • pp.915-920
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    • 2007
  • AIN-based film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration such as Mo/AIN/bottom-metal/Si are fabricated by employing a novel process. The proposed resonator structure does not require any supporting layer above the substrate, which leads to the reduction in energy loss of the resonators. For all the FBAR devices, the frequency response characteristics are measured and the device parameters, such as return loss and input impedance, are extracted from the frequency responses, and analyzed in terms of the various metals such as Al. Cu, Mo, W used in the bottom-electrode. The mass-loading effect caused by the used bottom-electrode metals is found to be the main reason for the difference revealed in the measured characteristics of the fabricated FBAH devices. The results obtained in this study also show that the degree of match in lattice constant and thermal expansion coefficient hetween piezoelectric layers and electrode metals is crucial to determine the device performance of FEAR.

Comparison of structural and electrical properties of PMN-PT/LSCO thin films deposited on different substrates by pulsed laser deposition

  • Jiang, Juan;Chanda, Anupama;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.214-214
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    • 2010
  • The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

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Study on Rate-Limiting Factors with a Heavy Loaded Biofilter

  • Son, Hyun-Keun
    • Journal of Korean Society for Atmospheric Environment
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    • v.23 no.E2
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    • pp.74-81
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    • 2007
  • Feasibility test for a biofilter was performed to treat VOCs. The applied loading rate to the biofilter was calculated between 60 to $3,700\;kg\;COD/m^3$. Trimethyl-pentene and trimethyl-hexene were the two most dominant compounds and they occupy about 85 percent. During the acclimation period, it is desirable for a biofilter to receive relatively lower VOCs concentration and flow rate, until it can adjust to new substrate and operational environment. Temperature at various points inside the biofilter reactor was observed with more than 23 temperature sensors. With steam heating, temperatures of the top sections of the media were greater than those of bottom sections. Without steam heating, intermediate stages generally had higher temperature measurement than those of bottom and top stages. Because the pH values for different biofilter materials vary significantly, measurement of the pH for the mixture of different combinations of biofilter materials is necessary. Based on the types and brands of media, the measured pH ranged from 5.38 to 9.10. The range of measured pH of different mixtures with perlite, compost, saw dust, peat moss, limestone, vermiculite was 7.05 to 8.62.

Au Thin Film Fabrication of <111> Crystal Structure by Effusion Cell Process (Effusion Cell 방식에 의한 <111> 결정구조의 Au 박막의 제작)

  • Pyo Kyung Soo;Kim Kand Dae;Kim Yong Gu;Song Chung Kun
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.383-386
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    • 2004
  • The one of important requisites for fabricating molecular electronic device is the single crystal direction of bottom substrate nowadays. [1,2]. We obtain the optimum SAM result when the Au crystal is <111> structure for Self-Assembled molecular. To get the <111> crystal Au, we generally repeat heating and cooling course after evaporating Au [3]. However, we can fabricate <111> crystal Av thin film except post treatment because we simultaneously evaporate and anneal using Effusion Cell. In this paper, we study on thin film growth of <111> crystal Au as bottom electrode which is essential for Self-Assembled molecular by Effusion Cell and analyze crystal structure, thickness, surface conductivity and so on as each process condition.

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Novel Tunable Peace-Logo Planar Metamaterial Unit-Cell for Millimeter-Wave Applications

  • Khajeh-Khalili, Farzad;Honarvar, Mohammad Amin
    • ETRI Journal
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    • v.40 no.3
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    • pp.389-395
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    • 2018
  • A novel class of planar metamaterial unit-cells consisting of a peace logo pattern is presented. A significant advantage of the proposed peace-logo planar metamaterial (PLPM) unit-cell over existing designs is its tunability, simplicity, and compatibility with microstrip structures. The theoretical analysis is founded on the famous transmission-line theory for the metamaterial concept. Then, the tunable dual-band two-sided PLPM (TSPLPM) unit-cell is designed by printing a similar PLPM pattern at the bottom of the substrate. The influence of the bottom PLPM pattern on the resonance frequencies of the unit-cell was analyzed by performing numerical simulations using CST Microwave Studio 2017 and HFSSv15 simulators. The results of the numerical simulations demonstrated that the proposed TSPLPM has the ability to control the resonance frequencies over 50 GHz-75 GHz for millimeter-wave applications.

A Study on the Design of Dual-Band Equilateral-Triangular Microstrip Antennas (듀얼-밴드 정삼각형 마이크로스트립 안테나 설계에 관한 연구)

  • 문정군;임정섭;장재삼;윤서용;황호순;이문수
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.546-550
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    • 2003
  • For dual-band operation, it can be done by loading two pair of narrow slots in the equilateral-triangular patch, one embedded close to the side edges of the patch and the other inserted at the bottom edge of the patch. The obtained two operating frequencies are of same polarization planes. The frequency ratio of the two operating frequencies is turnabled by varing the positions and lengths of the inserted slots at the bottom edge of the patch. In this paper, A single-feed equilateral-triangular microstrip patch with two pairs of narrow slot for dual-frequency operation is printed on the substrate(TMN-4 Rosers Co.) of the 60 miles. the antenna radiation characteristics are calculated by Ensemble ver. 5.0 software, and compared with the experimental results.

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