• Proceedings of the KSR Conference
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• 2006.11a
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• pp.239-252
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• 2006

The existing track structure for urban Maglev system is designed for the Maglev vehicles of HSST in Japan and UTM in Korea. The tracks hvaing cross beams for supporting rails are located on bridge girders and have several draw backs. Linimo in Nagoya, Japan, the first commercial urban Maglev line, has separated tracks from a bridge to overcome the previous track structure. However, the Linimo just put the existing track on bridge deck. This study suggests a improved track structure for urban Maglev system and compares the behavior of the new and existing track through static structural analyses. In the improved track, the power collector of a Maglew vehicle is installed parallel to the bridge deck surface, and, thus, the bottom width of the track structure is not limited by the vehicle's width. Therefore, the live load is distributed more effectively by the wide bottom of the track. Also, steel plates instead of steel cross beams are used to support rails, and, thus, the rail's deflection is improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.238.2-238.2
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• 2014

Bottom emission type의 유기발광다이오드는 ITO glass와 Al 사이에 유기물 층이 샌드위치 구조로 존재하며, 발광층에서 발생된 빛은 방사 방향으로 퍼져나간다. 이때 bottom으로 이동하는 빛은 굴절률이 서로 다른 박막을 통과하면서 초기 발생된 빛 중 20%만이 air로 빠져나온다. 특히 glass와 air사이의 굴절률이 달라 발생되는 전반사에 의해 손실되는 빛의 양은 35%에 달한다. 따라서 본 연구에서는 glass와 air사이의 전반사를 줄이고 효과적으로 발광량을 추출하기 위해 열경화성 고분자를 사용하여 nano-structure를 제작하였다. 열경화성 고분자의 nano-structure를 제작하는데 있어 영향을 주는 온도, 압력 요인을 확인하였고, 투과율 99.6%, 직경 250 nm의 고밀도 nano-structure를 제작하였으며, 유기발광다이오드의 전기 광학적 특성에 미치는 효과를 살펴보았다.

• Journal of Korean Society of Environmental Engineers
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• v.32 no.7
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• pp.682-689
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• 2010

The purpose of this study was to determine any detrimental effects on surrounding environments by using bottom ash, waste tire, and mixture as a fill material to raise the ground level. Three different initial pHs (4, 6, 8) were applied to bottom ash and initial pH of 4 was used to waste tire and mixture. Among 7 heavy metals, Pb and Zn were exceeded drinking water standards but their concentrations decreased below drinking water standards within 1 PVE. Among 5 anions, sulfate exceeded 10 times of drinking water standards and further higher partition coefficients resulted in increased PVE of 8.21. For the mixture of bottom ash and waste tire, its concentrations of heavy metals and anions were decreased due to the dilution effect and lowered PVE from 8.21 (BA) to 5.89.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.208-210
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• 2008

We have developed a LCD Panel that form storage capacitance for pixels between pixel electrode of bottom glass and common electrode of top glass. This method could make higher transmission and higher production yield than before by removing storage electrode line and capacitance on the bottom glass by simplifying bottom pixel structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.281-285
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• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.10
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• pp.905-915
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• 2011

The free flexural vibration of a hanged clamped-free cylindrical shell partially submerged in water with gap from bottom is investigated. The fluid is assumed to be inviscid and irrotational. The cylindrical shell is modeled by using the Rayleigh-Ritz method based on the Sanders shell theory. The kinetic energy of the fluid is derived by solving the boundary-value problem related to the fluid motion. The natural vibration characteristics of the partially submerged cylindrical shell are discussed with respect to the added virtual mass approach. In this study, experiments were carried out to confirm theoretical results. It was found that theoretical prediction is in good agreement with experimental results.

• Current Optics and Photonics
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• v.7 no.2
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• pp.200-206
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• 2023

Near-infrared (NIR) sensing technology using CMOS image sensors is used in many applications, including automobiles, biological inspection, surveillance, and mobile devices. An intuitive way to improve NIR sensitivity is to thicken the light absorption layer (silicon). However, thickened silicon lacks NIR sensitivity and has other disadvantages, such as diminished optical performance (e.g. crosstalk) and difficulty in processing. In this paper, a pixel structure for NIR sensing using a stacked CMOS image sensor is introduced. There are two photodetection layers, a conventional layer and a bottom photodiode, in the stacked CMOS image sensor. The bottom photodiode is used as the NIR absorption layer. Therefore, the suggested pixel structure does not change the thickness of the conventional photodiode. To verify the suggested pixel structure, sensitivity was simulated using an optical simulator. As a result, the sensitivity was improved by a maximum of 130% and 160% at wavelengths of 850 nm and 940 nm, respectively, with a pixel size of 1.2 ㎛. Therefore, the proposed pixel structure is useful for NIR sensing without thickening the silicon.

• Magazine of the Korean Society of Agricultural Engineers
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• v.31 no.4
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• pp.58-71
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• 1989

This study aims to develop a computerized program for analysis of the ground-supported cylindrical shell structure with step varied section and to find out its mechanical characteri- stics through application of the developed program to the analysis of a ensiled farm silo as a model structure. The thickness of wall and bottom-plate of farm silo is assumed to be step-varied and its detailed structural dimensions are presented in Tab. 1 and 2. Several numerical case studies show that sectional stresses of the sample structures are largely reduced by adopting "varied section" design technique. And, other major results ob- tained from this study are summarize4 as follows ; 1. The variation of wall-thickness has a great influence on bending stresses of wall. Ho- wever, the larger the relative thickness of bottom-plate is, the smaller the influence is. 2. The magnitude of thickness of projecting toe of bottom-plate has negligible effect on sectional stresses 3. The conventional design methodology, which assumes the bottom edge of wall as clam- ped on ground, is proved to be discarded through the numerical analysis. 4. It is found that the "varied section" design technique should get similar effects as in the case of thick bott6m-plate having uniform thickness. 5. The variation of wall-thickness has a considerable effect on the bending stresses of bo- ttom-plate. Especially, this phenomenon is very remarkable in its projecting toe. In some cases. the negative bending moment may be acted on.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.44-48
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• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2939-2945
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• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.