• Journal of Welding and Joining
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• v.23 no.2
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• pp.52-58
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• 2005

This study was carried out to investigate the effect of bonding temperature and heating rate on transient liquid phase diffusion bonding of Ni-base superalloy. The heating rate was varied by $0.1^{\circ}C$/sec, $1^{\circ}C$/sec, $10^{\circ}C$/sec to the bonding temperatures $1100^{\circ}C,\;1150^{\circ}C,\;1200^{\circ}C$ under vacuum. As bonding temperature increased, maximum dissolution width of base metal increased, but a dissolution finishing time decreased. The eutectic width of insert metal in the bonded interlayer decreased linearly in proportion to the square root of holding time during isothermal solidification stage. The bonding temperature was raised, isothermal solidification rate slightly increased. As the heating rate decreased and the bonding temperature increased, the completion time of dissolution after reaching bonding temperature decreased. When the heating rate was very slow, the solidification proceeded before reaching bonding temperature and the time required for the completion of isothermal solidification became reduced.

• Journal of Welding and Joining
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• v.18 no.4
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• pp.96-103
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• 2000

This study investigated the effects of bonding temperature and bonding atmosphere on high temperature mechanical properties of transient liquid phase(TLP) bonded joints of heat resistant alloy using MBF-50 insert metal. Specimens were bonded at 1,423~1,468K for 600s. Microconstituents of {TEX}$Cr_{7}(C,B)_{3}${/TEX}were formed in the bonded region when the bonding temperature was low. The amount of microcostituents in the bonded layer decreased with increasing the bonding temperature, and the microconstituents in the bonded layer disappeared at the bonding temperature above 1,468K. The tensile strength of the joints at elevated temperatures increased with the increase the bonding temperature and was the same level as one of the base metal in the bonding temperature over 1,453K. Microstructure and alloying element distributions of the bonded region bonded in Ar and $N_2$atmosphere were similar to those of the bonded in vacuum. The creep rupture strength and rupture lives of joints were almost identical to those of base metal.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.41-47
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• 2022

Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

• Journal of Welding and Joining
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• v.22 no.1
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• pp.77-82
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• 2004

The effect of bonding condition on tensile properties of joints diffusion bonded spheroidal graphite cast iron, FCD60 to Cr-Mo steel, SCM 440 was investigated. Diffusion bonding was performed with various temperatures, holding times, pressures and atmospheres. All tensile specimens were fractured at the bonding interface. The tensile strength and elongation was increased with increasing bonding temperature. Especially, tensile strength of joints bonded at 1123K was higher than that of a raw material, FCD60, and tensile strength of joints bonded at 1173K was equal to that of a raw material, SCM440, but elongation of all joints was lower than those of raw materials. There was little the effect of holding time on the tensile properties. In comparison with bonding atmosphere, the difference of tensile strength was not observed, but elongation of joint bonded at vacuum(6.7mPa and 67mPa) was higher than that of Ar gas. Higher the degee of vacuum, elongation increased. Tensile properties of diffusion bonds depended on microstructures of cast iron at the interface and void ratio. Microstructures of cast iron at interface changed with temperature, because decarburizing and interdiffusion at the interface occurs and transformation of austenite-1 ferrite + graphite occurs on the cooling process. The void ratio decreased with increasing temperature, especially, effected on the elongation.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.21-27
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• 2010

The effect of COG bonding parameters, especially the bonding temperature, on the bonding quality and reliability was investigated in this paper. We measured the bubble area formed in the ACF resin during the bonding process and tried to investigate the relationship between bubble area and bonding peel strength. 85/85 test which exposes a sample to a 85% humidity and $85^{\circ}C$ temperature condition was also carried out. The bubble area was dramatically increased under ~$10^{\circ}C$ lower than recommended bonding temperature. The bubble area formed at the edge of IC chip was larger than the other parts of IC chip. But the peel strength was not associated with the bubble area. High temperature and humid condition made the bubble area larger, but we could not find clear trend of change in the peel strength.

• Geomechanics and Engineering
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• v.18 no.2
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• pp.133-140
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• 2019

Strain-rate and temperature have significant effects on the one-dimensional (1D) compression behavior of soils. This paper focuses on the bonding degradation effect of soil structure on the time and temperature dependent behavior of soft structured clay. The strain-rate and temperature dependency of preconsolidation pressure are investigated in double logarithm plane and a thermal viscoplastic model considering the combined effect of strain-rate and temperature is developed to describe the mechanical behavior of unstructured clay. By incorporating the bonding degradation, the model is extended that can be suitable for structured clay. The extended model is used to simulate CRS (Constant Rate of Strain) tests conducted on structural Berthierville clay with different strain-rates and temperatures. The comparisons between predicted and experimental results show that the extended model can reasonably describe the effect of bonding degradation on the stain-rate and temperature dependent behavior of soft structural clay under 1D condition. Although the model is proposed for 1D analysis, it can be a good base for developing a more general 3D model.

• Journal of Welding and Joining
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• v.32 no.1
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• pp.66-70
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• 2014

In Ti active brazing of YSZ to STS 430 using Ag-Cu Filler Metal, the effect of Ti contents on the shear bonding strength were investigated together with the effect of brazing temperature and holding time. The addition of Ti in Ag-Cu Filler Metal increased the bonding strength up to 4.68% Ti, followed by the decrease with further addition. This seems to be caused by formation of TixOy at the reaction layer. Brazing temperature was optimized at $960^{\circ}C$ among a given temperature ranges. The addion of Sn to Ag-Cu filler metal brought the decrease of its melting temperature its melting temperature without a significant decrease of bonging strength.

• ETRI Journal
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• v.37 no.5
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• pp.951-960
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• 2015

For a conventional power metal-oxide-semiconductor field-effect transistor (MOSFET), there is a trade-off between specific on-state resistance and breakdown voltage. To overcome this trade-off, a super-junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature-sensing structures-diode and resistive. In this paper, a diode-type temperature-sensing structure for a TMOSFET is designed for a brushless direct current motor with on-resistance of $96m{\Omega}{\cdot}mm^2$. The temperature distribution for an ultra-low on-resistance power MOSFET has been analyzed for various bonding schemes. The multi-bonding and stripe bonding cases show a maximum temperature that is lower than that for the single-bonding case. It is shown that the metal resistance at the source area is non-negligible and should therefore be considered depending on the application for current driving capability.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.70-78
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• 1983

This paper discusses the application of Si-Borosilicate glass sealing to a new sealing method which utilizes a large electrostatic field to pormote bound formation at relatively low temperature. Bonding mechanism and the effect of bonding time bonding temperature glass thickness and surface roughness on the bond strength were investigated. Application of a de voltage across bonded specimen gradually produced a layer of glass adjacent silicon which was depleted of mobile ions. As a consequence a n increasingly larger fraction of the applied voltage appeared across the depleted region and very large electric field resulted This field accompanyed by large electrostatic force acted as driving force the of strong bond. And stronger bond was formed with increasing bonding time and temperature. A low temperature preoxidation is advantageous for the Si surface having a rougher surface finish that 1 microinch.