• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.79-80
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• 2005

In this paper, the circuit models of optical to electrical(O/E) characteristics of waveguide photodiode(WGPD) submodule are examined. Test structures of WGPD and WGPD submodule were fabricated and S21 parameter was measured to characterize the O/E conversion property. Valid circuit models were derived by RF circuit simulation and O/E characteristics were modeled to analyze the effects of model parameters on the WGPD submodule performances. Based on the results, it can be concluded that the suggested WGPD submodule model can explain the characteristics of the O/E conversion of WGPD submodule, where the parasitic components originated from ribbon bonding block crucially influence on the performance of WGPD submodule, are able to show more efficient property by making compact bonding structure. We propose an effective WGPD submodule bonding structure and it can ensure the 40Gbps operation of WGPD.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.3
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• pp.123-128
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• 2008

Ti-6Al-4V alloy is a critical strategic metal used in aerospace structure due to the high specific strength, toughness, durability, low density, corrosion resistance. Examples of application of this alloy are airframe structural components, aircraft gas turbine disks and blades. Forming of this alloy is not easy due to its high strength and low formability. However, this alloy shows superplastic properties that allow for large plastic deformation under certain conditions. Combination of superplastic forming and diffusion bonding(SPF/DB) processes of this alloy has been widely used to replace mechanically fastened structures with reduced weight and fabrication costs. In this study, superplastic forming/diffusion bonding technology has been developed for fabricating lightweight sandwich panels with Ti-6Al-4V alloy. The experimental results show the forming of titanium lightweight sandwich structure is successfully performed from 3 and 4 sheets of Ti-6Al-4V.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.206-210
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• 2005

The SOI structure with buried alumina was fabricated by ALD followed by bonding and etchback process. The interface of alumina and silicon was analyzed by CV measurements and cross section was investigated by SEM analysis. The density of interface state of alumina and silicon was 2.5E11/$cm^{2}$-eV after high temperature annealing for wafer bonding. It was confirmed that the surface silicon layer was completely isolated from substrate by cross section SEM and AES depth profile. The device on this alumina SOI structure would have better thermal properties than that on conventional SOI due to higher thermal conductivity of alumina than that of silicon dioxide.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2018.05a
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• pp.107-108
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• 2018

In this study, we applied the fiber sheet made by the stitch bonding method, which is a structure in which transverse yarns and double yarns are crossed by applying the principle of sewing knitting without the use of adhesive, The tensile strength of the reinforced concrete structure was investigated. As a result of the tensile strength test of each specimen, the specimen to which the fiber sheet produced by the stitch bonding method was applied exhibited the highest tensile strength among the three types of specimens, and the fiber sheet produced by the needle punching method exhibited the lowest strength. In addition, the stitch - bonded fiber sheet showed a difference of strength of 0.1N / mm for both length and double - sided strength difference.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.5
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• pp.629-635
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• 2014

This paper describes propagation characteristics obtained by considering semiconducting screen and cross-bonding in underground transmission cables. The semiconducting screen of power cable has effect on propagation characteristics including attenuation, velocity and surge impedance. However, it is very difficult to apply the semiconduction screen for EMTP model because of the number of conductors limitation. Therefore, CIGRE WG 21-05 proposed advanced insulation structure and analysis technique of simplified approach including inner and outer semiconducting screen. In this paper, the various propagation characteristics analyse using this structure and technique for 154kV XLPE $2000mm^2$ cable. The frequency independent model of EMTP CABLE PARAMETER is used for just pattern analysis of propagation characteristics. For exact data analysis, the frequency dependent model of J-marti is used for EMTP modeling. From these result, various propagation characteristics of 154kV XLPE $2000mm^2$ cable according to semi conducting screen consideration, frequency range, cable length and pulse width are analysed. In addition, in this paper, the effects of cross-bonding are also variously discussed according to cross-bonding methods, direct connection and impedance of lead cable.

• Restorative Dentistry and Endodontics
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• v.20 no.2
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• pp.732-743
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• 1995

The purpose of this study was to evaluate the adaptation of light cured dentin bonding agents to tooth structure by measuring contraction gaps on interfaces between cavity wall and composite resin under SEM study. In this study, class V cavities with cementum margin were prepared on the buccal surfaces of 15 extracted human premolar teeth and teeth were randomly assigned 3 groups of 5 teeth each. The cavities were filled with three dentin bonding agents and two composite resins were investigated for this study: three dentin bonding agents; Scotchbond 2, Scotchbond Multi-Purpose. All-Bond 2, two composite resins; Silux Pius, Z-100. Group 1 : Scotchbond 2 + Silux Plus Group 2 : Scotchbond Multi~Purpose + Z-100 Group 3 : All-Bond 2 + Z-100 The restored teeth were stored in 100% relative humidity at $37^{\circ}C$ for 7 days. And then, the roots of the teeth were removed with the tapered fissure bur and the remaining crowns were sectioned occlusogingivally through the center of restorations. Adaptation at tooth-restoration interface was assesed occlusally, gingivally, and axially by scanning electron microscope. The results were as follows : 1. In Group 1, the adaptation to dentinal wall of Scotchbond 2 was poor, but the adaptation to enamel wall of Scotchbond 2 was excellent. 2. In Group 2, the adaptation to occlusal was axial wall and gingival wall of Scotchbond Multi-Purpose was excellent. Especially in axially wall, the dentin bonding agents infiltrated into dentinal tubules and there was excellent adaptation to dentinal wall. 3. In Group 3, the adaptation to occlusal wall and axial wall of All-Bond 2 was excellent. But in gingival wall, there was gap formation between composite resin and dentin bonding agent.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.60-66
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• 2015

The modified amorphous GeTe formed by pulsed laser irradiation in as-grown GeTe has been analyzed in terms of variations of local bonding structure using extended x-ray absorption fine structure (EXAFS). The modified GeTe film has octahedral-like Ge-Te bonding structure that can be effectively induced by irradiation process. The EXAFS data clearly shows that the irradiation can lead to reduction of the average coordination number. Variations in the transition temperature for the irradiated film during crystallization can be described by the presence of octahedral-like local structure.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Applied Microscopy
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• v.44 no.4
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• pp.123-132
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• 2014

Silicene is one of the most interesting two-dimensional materials, because of not only the extraordinary properties similar to graphene, but also easy compatibility with existing silicon-based devices. However, non-existing graphitic-like structure on silicon and unstable free-standing silicene structure leads to difficulty in commercialization of this material. Therefore, substrates are essential for silicene, which affects various properties of silicene and supporting unstable structure. For maintaining outstanding properties of silicene, van der Waals bonding between silicene and substrate is essential because strong interaction, such as silicene with metal, breaks the band structure of silicene. Therefore, we review the stability of silicene on other two-dimensional materials for van der Waals bonding. In addition, the properties of silicene are reviewed for silicene-based heterostructure.