• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.331-338
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• 2005

The rapid advances in high power light sources and arrays as encountered in incandescent lamps have induced dramatic increases in die heat flux and power consumption at all levels of high power LED packaging. The lifetime of such devices and device arrays is determined by their temperature and thermal transients controlled by the powering and cooling, because they are usually operated under rough environmental conditions. The reliability of packaged electronics strongly depends on the die attach quality, because any void or a small delamination may cause instant temperature increase in the die, leading sooner or later to failure in the operation. Die attach materials have a key role in the thermal management of high power LED packages by providing the low thermal resistance between the heat generating LED chips and the heat dissipating heat slug. In this paper, thermal transient characteristics of die attach in high power LED package have been studied based on the thermal transient analysis using the evaluation of the structure function of the heat flow path. With high power LED packages fabricated by die attach materials such as Ag paste, solder paste and Au/Sn eutectic bonding, we have demonstrated characteristics such as cross-section analysis, shear test and visual inspection after shear test of die attach and how to detect die attach failures and to measure thermal resistance values of die attach in high power LED package. From the structure function oi the thermal transient characteristics, we could know the result that die attach quality of Au/Sn eutectic bonding presented the thermal resistance of about 3.5K/W. It was much better than those of Ag paste and solder paste presented the thermal resistance of about 11.5${\~}$14.2K/W and 4.4${\~}$4.6K/W, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.6
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• pp.2624-2630
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• 2013

In LED chip packaging, die bonding is a very important process which fixes the LED chip on the lead flame to provide enough strength for the next process. During the process, inspection processes are very important to detect exact locations of dispensed epoxy dots and to determine bonding status of dies whether they are lies at exact positions with sufficient bonding strength. In this study, a useful machine vision based inspection system is proposed for the LED die bonder. In the proposed system, 2 cameras are used for epoxy dot position detection and 2 cameras are sued for die attaching status determination. New vision processing algorithm is proposed, and its efficiency is verified through required field experiments. Measured position error is less than $X:-29{\mu}m$, $Y:-32{\mu}m$ and rotation error:$3^{\circ}$ using proposed vision algorithm. It is concluded that the proposed machine vision based inspection system can be successfully implemented on the developed die bonding system.

• Korean Journal of Materials Research
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• v.26 no.7
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• pp.388-392
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• 2016

A cold roll-bonding process was applied to fabricate an AA1050/AA6061/AA1050 laminate complex sheet. Two AA1050 and one AA6061 sheets of 2 mm thickness, 40 mm width and 300 mm length were stacked up after surface treatment that included degreasing and wire brushing; material was then reduced to a thickness of 3 mm by one-pass cold rolling. The laminate sheet bonded by the rolling was further reduced to 1.2 mm in thickness by conventional rolling. The rolling was performed at ambient temperature without lubricant using a 2-high mill with a roll diameter of 210 mm. The rolling speed was 5.0 m/sec. The AA1050/AA6061/AA1050 laminate complex sheet fabricated by roll bonding was then hardened by natural aging T4) and artificial aging (T6) treatments. The microstructures of the as-roll bonded and the age hardened Al complex sheets were revealed by optical microscope observation; the mechanical properties were investigated by tensile testing and hardness testing. The strength of the as-roll bonded complex sheet was found to increase by 2.9 times compared to that value of the starting material. In addition, the hardness of the complex sheets increased with cold rolling for AA1050 and age-hardening treatment for AA6061, respectively. After heat treatment, both AA1050 and AA6061 showed typical recrystallization structures in which the grains were equiaxed; however, the grain size was smaller in AA6061 than in AA1050.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.154-159
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• 2016

A roll-bonding process was applied to fabricate an AA1050/AZ91/AA1050 laminate complex sheet. Two AA1050 and one AZ91 magnesium sheets of 2 mm thickness, 30 mm width and 200 mm length were stacked up after surface treatment that included degreasing and wire brushing; material was then reduced to a thickness of 3 mm by one-pass cold rolling. The laminate sheet bonded by the rolling was further reduced to 2 mm in thickness by conventional rolling. The rolling was performed at 623K without lubricant using a 2-high mill with a roll diameter of 210 mm. The rolling speed was 15.9 m/min. The AA1050/AZ91/AA1050 laminate complex sheet fabricated by roll bonding was then annealed at 373~573K for 0.5h. The microstructure of the complex sheets was revealed by electron back scatter diffraction (EBSD) measurement; the mechanical properties were investigated by tensile testing and hardness testing. The strength of the complex sheet was found to increase by 11 % and the tensile elongation decreased by 7%, compared to those values of the starting material. In addition, the hardness of the AZ91 Mg region was slightly higher than those of the AA1050 regions. Both AA1050 and AZ91 showed a typical deformation structure in which the grains were elongated in the rolling direction; however, the mis-orientation distribution of grain boundaries varied greatly between the two materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.183-184
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• 2007

A 40 Gb/s transimpedance amplifier IC was designed and fabricated with a InP/InGaAs HBTs technology. In this study, we interconnect 40Gbps trans impedance amplifier IC to a duroid substrate by a flip chip bonding instead of conventional wire bonding for interconnection. For flip chip bonding, we developed fine pitch bump with the $70{\mu}m$ diameter and $150{\mu}m$ pitch using WLP process. To study the effect of WLP, electrical performance was measured and analyzed in wafer and package module using WLP. The Small signal gains in wafer and package module were 7.24 dB and 6.93dB respectively. The difference of small signal gain in wafer and package module was 0.3dB. This small difference of gain is due to the short interconnection length by bump. The characteristics of return loss was under -10dB in both wafer and module. So, WLP process can be used for millimeter wave GaAs MMIC with the fine pitch pad and duroid substrate can be used in flip chip bonding process.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.106-115
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• 1995

To know the bonding phenomena of Ti/Cu brazed joint, a characteristic of microstructures in bonding interlayer of vacuum brazed pure Ti to Cu has been studied in the temperature range from 1088 to 1133K for various bonding times using Ag-28wt%Cu filler metal. Also intermediate phases formed in bonded interlayer and behavior of layer growth have been investigated. The obtained results in this study are as follows: 1) Liquid insert metal width at the each brazing temperature was proportional to the square root of brazing time, and it was considered that the liquid insert metal width was controlled by the diffusion rate process of primary .alpha.-Cu formed at the Ti side. 2) Intermediate phases formed near the Ti interface were .betha.-Ti and intermetallic compounds TiCu, Ti$_{2}$Cu, Ti$_{3}$Cu, and TiCu. 3) .betha.-Ti formed in Ti base metal durig brazing transformed to lamellar structure, .alpha.-Ti + Ti$_{2}$Cu. The structure came from the eutectoil decomposition reaction in cooling. And the width of .betha.-Ti layer was proportional to the square root of brazing time, and it was considered that the growth of .betha.-Ti layer was controlled by interdiffusion rate process in .betha.-Ti. 4) The layer growth of TiCu, Ti$_{3}$Cu$_{4}$ and TiCu, phases formed near the Ti interface was linerface was linearly proportional to the brazing time, and it was considered that the layer growth of these phases was controlled by the chemical reaction rate at the interface.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.31-39
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• 2008

To develop the MEMS cap bonding process without cavity formation, we electroplated Cu/Sn rim structures and measured the bonding characteristics for the Cu/Sn rims of $25{\sim}400{\mu}m$ width. As the effective device-mounting area ratio decreased and the failure strength ratio increased for wider Cu/Sn rim, these two properties were estimated to be optimized for the Cu/Sn rim with 150 ${\mu}m$ width. Complete bonding was accomplished at the whole interfaces of the Cu/Sn packages with the rim widths of 25 ${\mu}m$ and 50 ${\mu}m$. However, voids were observed locally at the interfaces with the rim widths larger than 100 ${\mu}m$. Such voids were formed by local non-contact between the upper and lower rims due to the surface roughness of the electroplated Sn.

• Composites Research
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• v.24 no.5
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• pp.23-28
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• 2011

In this paper, the bonding strengths of co-cured T800 carbon/epoxy composite-aluminum single lap joints with and without additional pressures were investigated using the pressure information induced by the fiber tension during a filament winding process. The specimens of all the tests were fabricated by an autoclave vacuum bag de-gassing molding being controlled forming pressures (absolute pressures of 0.1MPa, 0.3MPa and 0.7MPa including vacuum). A special device which can act uniform additional pressures on the joining part of the single lap joint specimen was designed to measure the bonding strengths of composite-aluminum liners of type III hydrogen pressure vessel fabricated by a filament winding process. After the three different additional pressures (absolute pressures of 0.1MPa, 0.3MPa and 0.7MPa) were applied to the specimens the effect of the additional pressures on the bonding strengths of the co-cured single-lap joints were evaluated.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.58-64
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• 2006

In this study, we describe a low-temperature wafer-level thermocompression bonding using electroplated gold seal line and bonding pads by electroplating method for RF-MEMS devices. Silicon wafers, electroplated with gold (Au), were completely bonded at $320^{\circ}C$ for 30 min at a pressure of 2.5 MPa. The through-hole interconnection between the packaged devices and external terminal did not need metal filling process and was made by gold films deposited on the sidewall of the throughhole. This process was low-cost and short in duration. Helium leak rate, which is measured to evaluate the reliability of bonded wafers, was $2.7{\pm}0.614{\times}10^{-10}Pam^{3}/s$. The insertion loss of the CPW packaged was $-0.069{\sim}-0.085\;dB$. The difference of the insertion loss between the unpackaged and packaged CPW was less than -0.03. These values show very good RF characteristics of the packaging. Therefore, gold thermocompression bonding can be applied to high quality hermetic wafer level packaging of RF-MEMS devices.