• Journal of Welding and Joining
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• v.31 no.6
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• pp.77-83
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• 2013

3D packaging technology using TSV (Through Silicon Via)has been studied in the recent years to achieve higher performance, lower power consumption and smaller package size because electrical line is shorter electrical resistivity than any other packaging technology. To stack TSV chips vertically, reliable and robust bonding technology is required because mechanical stress and thermal stress cause fracture during the bonding process. Cu pillar/solder ${\mu}$-bump bonding process is usually to interconnect TSV chips vertically although it has weak shape to mechanical stress and thermal stress. In this study, we suggest Insert-Bump (ISB) bonding process newly to stack TSV chips. Through experiments, we tried to find optimal bonding conditions such as bonding temperature and bonding pressure. After ISB bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.175-182
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• 2017

In light emitting diode (LED) chip packaging, wire bonding is an important process that connects the LED chip on the lead frame pad with the Au wire and enables electrical operation for the next process. The wire bonding process is divided by two types: thermo compression bonding and ultrasonic bonding. Generally, the wire bonding process consists of three steps: 1st ball bonding that bonds the shape of the ball on the LED chip electrode, looping process that hangs the wire toward another connecting part with a loop shape, and 2nd stitch bonding that forms and bonds to another electrode. This study analyzed the factors affecting the LED die bonding processes to optimize the process capability that bonds a small Zener diode chip on the PLCC (plastic-leaded chip-carrier) LED package frame, and then applied response surface analysis. The design of experiment (DOE) was established considering the five factors, three levels, and four responses by analyzing the factors. As a result, the optimal conditions that meet all the response targets can be derived.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.469-470
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• 2007

• Journal of Welding and Joining
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• v.35 no.3
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• pp.52-61
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• 2017

Transient liquid phase (TLP) bonding is essential technology to repair micro-cracking on the airfoil of blades and vanes for gas turbines. Understanding of the characteristics of TLP bonding of the superalloys is necessary in the application of the technology for repairing these components. In this study, the focus was on investigating TLP bonding characteristics of ${\gamma}^{\prime}$ precipitation strengthened Ni based superalloy. TLP bonding was carried out with an amorphous filler metal in various bonding conditions, and the microstructural characterization was investigated through optical microscopy (OM) and electron probe micro-analysis (EPMA). The experimantal results explained clearly that bonding temperatures had critical effects on the TLP bonding behaviors, and that isothermal solidication of the joints made at higher temperatures than $1170^{\circ}C$ was controlled by Ti diffusion instead of B.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.7-13
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• 2019

Power module is getting attention from electronic industries such as solar cell, battery and electric vehicles. Transient liquid phase (TLP) boding, sintering with Ag and Cu powders and wire bonding are applied to power module packaging. Sintering is a popular process but it has some disadvantages such as high cost, complex procedures and long bonding time. Meanwhile, TLP bonding has lower bonding temperature, cost effectiveness and less porosity. However, it also needs to improve ductility of the intermetallic compounds (IMCs) at the joint. Wire boding is also an important interconnection process between semiconductor chip and metal lead for direct bonded copper (DBC). In this study, TLP bonding using Sn-based solders and wire bonding process for power electronics packaging are described.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.55-60
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• 2020

The recent semiconductor packaging technology is evolving into a high-performance system-in-packaging (SIP) structure, and copper-to-copper bonding process becomes an important core technology to realize SIP. Copper-to-copper bonding process faces challenges such as copper oxidation and high temperature and high pressure process conditions. In this study, the bonding interface quality of low-temperature copper-to-copper bonding using a two-step plasma treatment was investigated through quantitative bonding strength measurements. Our two-step plasma treatment formed copper nitride layer on copper surface which enables low-temperature copper bonding. The bonding strength was evaluated by the four-point bending test method and the shear test method, and the average bonding shear strength was 30.40 MPa, showing that the copper-to-copper bonding process using a two-step plasma process had excellent bonding strength.

• Transactions of Materials Processing
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• v.11 no.7
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• pp.596-600
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• 2002

The ultrasonic bonding method and its feasibility are investigated in this work for joining the micro components and MEMS packaging. The ultrasonic bonding process is analyzed using a lumped mode, and preliminary experiments using the eutectic solder and copper pin were carried out to verify possibility to MEMS packaging. The ultrasonic bonding process appears to be adequate for MEMS packaging by providing localized heating at the selected area. Microscopic behavior of the bond joint through ultrasonic vibration needs further investigation.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.857-863
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• 2014

In this work, we introduce various bonding technologies for 3D package and suggest Insert-Bump bonding (ISB) process newly to stack multi-layer chips successively. Microstructure of Insert-Bump bonding (ISB) specimens is investigated with respect to bonding parameters. Through experiments, we study on find optimal bonding conditions such as bonding temperature and bonding pressure and also evaluate in the case of fluxing and no-fluxing condition. Although no-fluxing bonding process is applied to ISB bonding process, good bonding interface at $270^{\circ}C$ is formed due to the effect of oxide layer breakage.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.763-768
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• 2005

Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified for other bonding methods such as ACF In bonding process, the bonding forte and temperature are known as the most dominant bonding parameters. A parametric study is performed for these two parameters. For the test sample, we used standard flip-chip test kit which consists of FR4 boards and dummy flip-chips. The bonding test was performed fur two types of flip-chips with different chip size and lead pitch. The bonding temperatures are chosen between $25^{\circ}C\;to\;300^{\circ}C$. The bonding forces are chosen between 5N and 300N. The bonding strength is checked using bonding force tester. After the bonding force test, the samples are examined by microscope to determine the failure mode. The relations between the bonding strength and the bonding parameters are analyzed and compared with bonding models. Finally, the most suitable bonding condition is suggested in terms of temperature and force.

• Journal of Welding and Joining
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• v.18 no.1
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• pp.70-76
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• 2000

A rolled steel for structural parts and lead bronze alloy were bonded each other by a new semi-solid diffusion bonding process to investigate the effect of the process parameters, for example bonding temperature and bonding time, on the interface characteristics, and bonding behavior. It can be possible that manufacture of the bonded steel/lead bronze which has a cylindrical shape with inserted the lead bronze alloy into the steel ring by the diffusion bonding process under the semi-solid condition of the lead bronze alloy without any pressure and flux. It has been know that the control of the amount of the liquid phase in semi-solid lead bronze alloy was very important to obtain soundness interface, since the shear strength of the bonded steel/lead bronze at 850℃ for 60 minutes under the condition of about 40% of the liquid phase in the lead bronze alloy shows maximum value, 210 MPa. The shear strength increases with an increase in bonding time and show maximum value, and then decreases.