• Korean Journal of Materials Research
• /
• v.5 no.6
• /
• pp.743-747
• /
• 1995

The relationship between the variation of crystallinity and the resultant self-bonding strength of PEEK was examined by using DSC in conjunction with the shear test. DSC measurement of the crystallinity produced at different bonding conditions demonstrated that even though PEEK specimens contain the same amount of crystallinity, the resultant self-bonding strength is sensitively dependent on bonding history. It also showed that all crystallization during the bending process occurs only in the healing and annealing stage and no additional crystallization occurs in the cooling stage.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.14 no.2
• /
• pp.25-30
• /
• 2015

This study involved the fabrication of precision machine tools using a polycrystalline diamond tip [sintered PCD and cemented carbide (WC-Co) tip] and WC-Co shanks via diffusion bonding with a paste-type nickel alloy filler metal. Diffusion bonding is a process whereby two materials are pressed together at high temperature and high pressure for a sufficient period of time to allow significant atomic diffusion to occur. For smooth progress, a filler metal of nickel alloy was used at the interface. Optical microscopy images were used to observe the copula of the bonded layer. It was confirmed that cracks occurred near the junction in all cases. The tensile strength of the bond was measured using a universal testing machine (UTM) with WC-Co proportional test specimens.

• Journal of computational fluids engineering
• /
• v.8 no.2
• /
• pp.33-41
• /
• 2003

A simplified simulation model is designed to investigate the vacuum-driven bonding of glass panels in the cell process for LCD manufacturing. The bonding process is modelled by the transient flow of a weakly-compressible fluid in a very thin channel between two horizontal glass panels. An order of magnitude scaling analysis is conducted based on the characteristic feature of the channel of which height is much smaller than the horizontal length scales. It is revealed that the flow in the channel is represented by a Poiseuille flow of a compressible fluid. A finite volume model has been constructed to acquire the numerical solution to the derived simplified equations. For a simple test problem of pressure-driven microchannel flow, an assessment is made of the accuracy and validity of the proposed model. The basic aspects of vacuum-driven bonding are examined numerically, and the applicability of the present simulation model is illustrated.

• Journal of the Korean Society for Heat Treatment
• /
• v.29 no.2
• /
• pp.56-61
• /
• 2016

Heating experiments using the Ti-3Al-2.5V tube materials in a vacuum furnace have been performed to investigate a pertinent range of working temperatures and holding times for the development of the successive or simultaneous operation of superplastic hydroforming and diffusion bonding. The specimens were heated at $820^{\circ}C$, $870^{\circ}C$ and $920^{\circ}C$ respectively. Holding times at each temperature were varied up to 4 hours. Holding times longer than 1 hour were selected to consider the diffusion bonding process after or during the hydroforming process in the superplastic state. Grain sizes were varied from $5.7{\mu}m$ of the as-received tube to $9.2{\mu}m$ after heating at $870^{\circ}C/4hours$. Homogeneus granular microstructures could be maintained up to $870^{\circ}C$, while microstructures at $920^{\circ}C$ showed no more granular type.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05b
• /
• pp.38-41
• /
• 2001

In this work, we have been studied the characteristics of each nitride film for the optimization of PMD(pre-metal dielectric) liner nitride process, which can applicable in the recent semiconductor manufacturing process. The deposition conditions of nitride film were splited by PO (protect overcoat) nitride, baseline, low hydrogen, high stress and low hydrogen, respectively. And also we tried to catch hold of correlation between BPSG(boro-phospho silicate glass) deposition and densification. Especially, we used FTIR area method for the analysis of density change of Si-H bonding and Si-NH-Si bonding, which decides the characteristics of nitride film. To judge whether the deposited films were safe or not, we investigated the crack generation of wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation.

• Journal of Korea Foundry Society
• /
• v.13 no.1
• /
• pp.42-49
• /
• 1993

Conventional manufacturing process for cast iron-babbitt metal composite is complicate and bimetallic bonding by centrifugal casting is also difficult because their melting point is largely different and nonmetallic inclusion exists on outer shell. This study is aiming to simplify multistage process by adding Cu-powder as insert metals during cast iron solidification. The variables on fabrication of composite pipe are mold rotating speed and inner surface temperature of outer metal. The optimum temperature range for fusion bonding between cast iron and Cu-layer was $1100^{\circ}C-1140^{\circ}C$ in case of mold rotating speed was 700rpm. When the inner surface of Cu-layer was at $900^{\circ}C$, the value of interfacial hardness between Cu-layer and babbitt metal were higher than Cu-matrix by forming diffusion layer, interfacial products between Cu-layer and babbitt metal are proved to be $Cu_6Sn_5({\eta})$by XRD.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.4
• /
• pp.37-42
• /
• 2011

In this paper, novel carbon nanotube (CNT)-filled Solderable electrically conductive adhesive (ECA) and joining process have been developed. To investigate the bonding characteristics of CNT-filled Solderable ECA, three types of Solderable ECAs with different CNT weight percent (0, 0.1, 1wt%) were formulated. For a joining process, the quad flat package (QFP) chip was used. The QFP chip had a size of $14{\times}14{\times}2.7$ mm and a 1 mm lead pitch. The test board had a Cu daisy-chained pattern with 18 ${\mu}m$ thick. After the bonding process, the bonding characteristics such as morphology of conduction path, electrical resistance and pull strength were measured for each formulated ECAs. As a result, the electrical and mechanical bonding characteristics for a QFP joints using CNT-filled ECA were improved about 10% compared to those of QFP joints using ECA without CNT.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.25 no.9B
• /
• pp.1635-1640
• /
• 2000

In this paper, a 18 GHz oscillator is designed with the push-push method an fabricated by semi-MMIC process, in which the second harmonic is the main output signal with the suppressed fundamental mode. In semi-MMIC process, passive components with microstrip transmission line are implemented using MMIC process on semi-insulating GaAs substrate. Then, chip types of P-HEMT, resistors, and capacitors are connected through Au wire-bonding. Also, the ground plane is inserted around the circuit and connected each other with the back-side of substrate through Au wire-bonding instead of via-hole. The semi-MMIC push-push oscillator shows the output powder of -10.5 dBm, the fundamental frequency suppression of -17.3 dBc/Hz, and the phase noise of -97.9 dBc/Hz at the offset frequency of 100 kHz.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2007.05a
• /
• pp.332-335
• /
• 2007

The superplastic forming (SPF) has been widely used in the automotive and aerospace industry because it has great advantages to produce very light and strong components. Finite element method (FEM) is used to model the process of superplastic forming/diffusion bonding (SPF/DB), to predict the pressure-time curve and to analyze the process parameter. In this study, process design of SPF/DB is carried out a 3-sheet sandwich part. SPF/DB process with pressure control was analyzed by using finite element method. For obtaining proper shape, step-by-step pressurization is proposed. The first step of SPD/DB process is obtained by applying of pressure in patches. From the next step it applied pressure to all regions (between inner sheets, between inner and face sheets). By using the proposed pressurization scheme, deficit in part shape is found to be eliminated.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.2
• /
• pp.37-41
• /
• 2014

One of the important developments in next generation electronic devices is the technology for power delivery and heat dissipation. In this study, the Cu-to-Cu flip chip bonding process was evaluated using the square ABL power bumps and circular I/O bumps. The difference in bump height after Cu electroplating followed by CMP process was about $0.3{\sim}0.5{\mu}m$ and the bump height after Cu electroplating only was about $1.1{\sim}1.4{\mu}m$. Also, the height of ABL bumps was higher than I/O bumps. The degree of Cu bump planarization and Cu bump height uniformity within a die affected significantly on the misalignment and bonding quality of Cu-to-Cu flip chip bonding process. To utilize Cu-to-Cu flip chip bonding with ABL bumps, both bump planarization and within-die bump height control are required.