• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1096-1098
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• 1999

The performance of as plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the optimum preparation conditions of MgO Protecting layer by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage, lower erosion rate as a consequence of ion bombardment, higher optic transparency and higher crack resistance in annealing process than those samples prepared by conventional magnetron sputtering or E-beam eraporation.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.27-34
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• 2001

A new functionally gradient metal coating method using an atomic mixing technique was developed. In this work the effect of silver atomic mixing on the tribological characteristics of silver$.$ films. has been investigated experimentally. Atomic mixing was implemented by using the, bombardment .of accelerated Ar ions during the thermal evaporation coating process of silver films. Experiments were performed in dry conditions using a ball-on-disk test rig at a load range of 19.6 mN - 17.64 N and a sliding velocity of 20 mm/sec. Results showed that the life of functionally gradient silver coating was enhanced about 100 times more than that of thermally evaporated silver coating and 2 times more than that of IBAD silver coating. The functionally gradient. film also showed low friction and wear compared to those of the evaporated silver and

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.197-197
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• 2012

Device 제작에 사용된 graphene은 일반적인 lithography 공정에서 resist residue에 의한 오염을 피할 수 없으며 이로 인하여 graphene의 pristine한 성질을 잃어버린다. 본 연구에서는 graphene을 저밀도의 argon inductively coupled plasma (Ar-ICP)를 통해 처리함으로서 graphene based back-gated field effect transistor (G-FET)의 특성변화를 유도한 결과에 대해서 보고한다. Argon capacitively coupled plasma (Ar-CCP)은 에 노출된 graphene은 강한 ion bombardment energy로 인하여 쉽게 planar C-C ${\pi}$ bonding (bonding energy: 2.7 eV)이 breaking되어 graphene의 defect이 발생되었다. 하지만 우리의 경우 저밀도의 Ar-ICP가 적용될 때 graphene의 defect이 제한되며 이와 동시에 contamination 만을 제거할 수 있었다. 소자의 전기적 측정 (Gsd-Vbg)을 통하여 contamination으로 인하여 p-doping된 graphene은 pristine 상태로 회복되었으며 mobility도 회복됨이 확인되었다. Ar-ICP를 이용한 graphene cleaning 방법은 저온공정, 대면적 공정, 고속공정을 모두 만족시키며 thermal annealing, electrical current annealing을 대체하여 graphene 기반 소자를 생산함에 있어 쉽고 빠르게 적용할 수 있는 강점이 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.151-151
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• 2011

Atmospheric-pressure plasmas are used in a variety of materials processes. The lifetime of most atmospheric-pressure plasma sources is limits by electrode erosion due to energetic ion bombardment. These drawbacks were solved recently by several microplasma sources based on microstrip structure, which are more efficient and less prone to perturbations than other microplasma sources. In this work, we propose microplasma sources based on strip line and microstrip line, developed for the generation of microplasmas even in atmospheric air and analyzes these systems with microwave field simulation via comparative study with two previous microwave sources (Microstrip Spit Ring Resonator (MSRR), Microstrip Structure Source (MSS)).

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.101-102
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the de bias voltage of -10V showed lower discharge voltage, lower erosion rate by ion bombardment, higher optic transparency and higher crack resistance in annealing process than those samples prepared by conventional magnetron sputtering or E-beam evaporation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1011-1015
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• 2002

In this study, Au thin films were etched with a Cl$_2$/Ar gas combination in an inductively coupled plasma. The highest etch rate of the Au thin film was 3500 A/min at a Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in Cl$_2$/Ar plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions[l].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.184-189
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• 2002

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.547-549
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• 2000

Silicone insulators have many advantages over porcelain insulators. Especially silicone insulators have good characteristics of impact hardness, surface insulation, ease of processing, mass productivity and don't have risk of bombardment and vandalism. Recently insulation part made by silicone are becoming widely used. In this paper we introduce the development of Sealing End for 132kV XLPE cable with silicone composite hollow insulator and the adoption of it to a actual transmission line in abroad. This paper contains of design procedure, structure, electrical performance of it.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.89-92
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• 2003

ITO thin films were deposited by RF-magnetron sputtering method and crystallization behavior of the films with and without external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed. Because RF-sputtering transfers the high-energy to the growing film by energetic bombardment, it is believed that considerable activation energy for the crystallization of the film has transferred during deposition, which resulted in the crystallization of ITO thin films without external energy supply.

• Journal of Welding and Joining
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• v.32 no.1
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• pp.108-111
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• 2014

Low arc weldability of aluminum alloy is enhanced by applying variable polarity TIG and the result is theoretically investigated to figure out the mechanism. Conventionally, it is well known fact that DCEP (reverse polarity) arc is effective on aluminum welding. The reason is due to oxide layer removal by plasma ion bombardment and therefore it is named as cleaning effect. Another fact of polarity characteristic is that DCEN shows higher heat input efficiency therefore conventional variable polarity arc used to apply DCEP portion as small as possible. However, higher DCEP portion shows bigger weldment in this research and it is explained by adopting a theory of arc concentration on oxide layer with tunneling effect which was not clearly mentioned before in several variable polarity TIG welding research. Disagreement between variable polarity TIG welding result and conventional arc polarity theory is rationally explained for the first time with help of electron emission theory.