• The Korean Journal of Physiology and Pharmacology
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• v.26 no.3
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• pp.157-164
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• 2022

Disulfiram (DSF) is an aldehyde dehydrogenase inhibitor. DSF has potent anti-cancer activity for solid and hematological malignancies. Although the effects on cancer cells have been proven, there have been few studies on DSF toxicity in bone marrow cells (BMs). DSF reduces the metabolic activity and the mitochondrial membrane potential of BMs. In subset analyses, we confirmed that DSF does not affect the proportion of BMs. In addition, DSF significantly impaired the metabolic activity and differentiation of BMs treated with granulocyte macrophage-colony stimulating factor, an essential growth and differentiation factor for BMs. To measure DSF toxicity in BMs in vivo, mice were injected with 50 mg/kg, a dose used for anti-cancer effects. DSF did not significantly induce BM toxicity in mice and may be tolerated by antioxidant defense mechanisms. This is the first study on the effects of DSF on BMs in vitro and in vivo. DSF has been widely studied as an anti-cancer drug candidate, and many anti-cancer drugs lead to myelosuppression. In this regard, this study can provide useful information to basic science and clinical researchers.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.178-180
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• 2017

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a $0.25{\mu}m$ AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a non-uniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.

• Korean Journal of Construction Engineering and Management
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• v.3 no.1 s.9
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• pp.65-73
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• 2002

By its nature, software part of the construction industry such as engineering and so forth has been kept secret to outside, as it determines a company$^{\circ}{\phi}s$ competitiveness. As a result, construction field knowledge usually disappears with the end of a project. The objective of this study is to develop the knowledge management (BM) learning model tuned in to construction area in order to manage project-related knowledge and promote the knowledge management. This study presented a learning model for knowledge management in the construction field, with the aim to integrate a series of processes. The model is composed of EIP, EDMS, knowledge and failure cases management, CoP and e-Learning.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.826-831
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• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.389-393
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• 2003

The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.11 s.353
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• pp.210-215
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• 2006

In this paper, we develop the PLL system of the local oscillator system using Gunn oscillator VCO for millimeter wave band receiving system. The local oscillator system consists of the $86{\sim}115GHz$ Gunn. diode oscillator part, the RF processing part including the diplexer and the harmonic mixer, and the DPLL system including Gunn modulator and controller. Based on this configuration, we verify the frequency and power stability of the developed local oscillator system. We developed system which applied to DPLL technique instead of the existing analog PLL method to accomplish this purpose. The developed system for this purpose is tested the frequency and power stability for a long time to confirm performance. Since we confirmed this system that had frequency characteristic of within ${\pm}10Hz$, very fine output drift power characteristic of $0.2{\sim}0.3dBm$ and about 200MHz locking range, it verified suitable for cosmic radio receiving system through the test result.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.29-36
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• 2009

In this paper, the design and implementation of LNA and down-mixer using 90 nm CMOS process are presented for 60 GHz band WPAN receiver. In order to extract characteristics of the transistor used to design each elements under the optimum bias conditions, the S-parameter of the manufactured cascode topology was measured and the effect of the RF pad was removed. Measured results of 3-stages cascode type LNA the gain of 25 dB and noise figure of 7 dB. Balanced type down-mixer with a balun at LO input port shows the conversion gain of 12.5 dB within IF frequency($8.5{\sim}11.5\;GHz$) and input PldB of -7 dBm. The size and power consumption of LNA and down-mixer are $0.8{\times}0.6\;mm^2$, 43 mW and $0.85{\times}0.85\;mm^2$, 1.2 mW, respectively.

• The Journal of the Korean Society for Microbiology
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• v.21 no.3
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• pp.399-406
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• 1986

This study was performed to establish human plasmacytoma cell line as the partner cells for producing human hybridoma. Bone marrow cells from a multiple myeloma patient from Seoul National University Hospital, Korea were cultured and established as the cell line, named as HMC-BM4. HMC-BM4 cells were cultivated in RPMI 1640 media containing 8-azaguanine(8-AG; gradually increasing concentration from $1\;{\mu}g/ml$ to $20\;{\mu}g/ml$). 8-AG resistant cells were collected and cloned by limiting dilution. Each clone was divided and tested to die in hypoxanthine, aminopterine and thymidine (HAT) selection media. Finally one clone was selected and named as HMC-AR, which was sensitive to HAT selection media. HMC-AR cells showed typical morphology of plamacytoma in Wright staining. No cell formed the rosette with sheep erythrocytes. Surface membrane $\mu$ heavy chain was detected in 20% of HMC-AR cells and cytoplasmic $\mu$ heavy chain in 90% of them by direct immunofluorescent staining. Ia-like antigen was found in 90% of HMC-AR cells by indirect immunofluorescent staining using anti-Ia-like antigen monoclonal antibody, 1BD9-2. And about $1.0\;{\mu}g/ml$ of human $\mu$ heavy chain was detected in the 3-day culture supernatant of HMC-AR cells. 88% of cells contained 46 chromosomes. Mycoplasma was not detected in HMC-AR cells by Hoechst 33258 staining. This cell line would be used for making hybridomas secreting human monoclonal antibody.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.2
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• pp.97-104
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• 2017

In this paper, we designed and fabricated the multi band Transceiver Assembly(TCA) for the Multi Channel Synthetic Aperture Radar(MCSAR) containing C-band, X-band, Ku-band and we researched to verify electrical performance of TCA. The transceiver consists of transmitters, receivers, signal selection modules for each band, and stability oscillator, frequency synthesizer, controller, power distributor. The transceiver has a receive path selection and bandwidth selection functions in accordance with the operating mode. And the transceiver can transmit and receive all three bands simultaneously, each band has a bandwidth of up to 300 MHz. Final transmission output of transceiver for each band is over 20 dBm to be suitable for driving the T/R module. Receiver bandwidth is selected according to the required function and receiver gain has approximately C-band 52 dB, X-band 50 dB, Ku-band 60 dB, the maximum noise figure of Ku-band V polarization is 4.28 dB in the whole band H, V polarization. As a result of the electrical performance test, a multi-band TCA is satisfied the property requirements of the MCSAR.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.118-121
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• 2003

A new approach, using MEMS, for improving the performance of high efficiency amplifiers is proposed in this paper. The MEMS tuning element is described as a variable-length shorted CPW stub. Class-E amplifiers can be optimally tuned by these MEMS tuning elements because their operation varies with the impedance of the output tuning circuit. A MEMS tuning element was simulated using full-wave EM simulators to obtain its S-parameters. A Class-E amplifier with the MEMS was designed at 8GHz. The non-linear operation of this amplifier was simulated to explore the effect of the MEMS tuning. Comparing the initially designed amplifier without MEMS, the Power Added Efficiency (PAE) of the amplifier with MEMS is improved from 46.3% to 66.9%. For the amplifier with MEMS, the nonlinear simulation results are PAE = 66.90%, $\eta$(drain efficiency) = 75.89%, and $P_{out}$ = 23.37 dBm at 8 GHz. In this paper, the concept of the MEMS tuning element is successfully applied to the Class E amplifier designed with transmission lines.