• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.637-639
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• 1997

Samples of $YTa_7O_{19}$ doped with $Tm^{3+}$ were prepared using the solid state reaction method to investigate their photoluminescence characteristics. The samples were identified by XRD and SEM, and the optical measurement was also carried out. Under 359 nm excitation, $YTa_7O_{19}$ doped with $Tm^{3+}$ exhibited a narrow-band blue emission, at about 455 nm. The maximum emission intensity was obtained at $YTa_7O_{19}$ doped with 0.12 mole $Tm^{3+}$. This revealed the concentration quenching of emission intensity.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.49-52
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• 2009

We have investigated the effect of the surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of ITO thin films, we have processed photolithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the ITO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the ITO thin films. Device structure was ITO/$\alpha$-NPD/DPVB/Alq3/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer (minolta CS-1000A). The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1170-1176
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• 1996

Porous silicon was prepared by anodic reaction. The process was controlled by current density and etching time an the thickness change and the room temperature PL was measured. The thickness of porous silicon was increased with etching time and was decreased after critical time. It was the same as increasing current density. It needed only 15 sec to electropolish the surface of porous silicon above current density 70 mA/cm2. We can understand that increasing etching time leads narrow size of Si column by porous silicon formation mechanism. And the sample with narrow Si column revealed PL blue shift. The specimens were heated in the range of 300-1000$^{\circ}C$ in order to see PL changes. The heat treatment was proceeded in H2 atmosphere vacuum system to avoid oxidation. The PL was disappeared above 600$^{\circ}C$. In high temperature some sintered Si columns were observed in SEM photography. There was no difference of -Hx bonds which was suggested as evidence of hydride compounds luminescence between 500$^{\circ}C$ and 600$^{\circ}C$. Thus it is concluded that quantum confinement is major factor of PL of porous silicon.

• Journal of Information Display
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• v.3 no.2
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• pp.6-12
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• 2002

In order to achieve white emission from organic light emitting devices (OLEDs), five distinct structures were fabricated and tested. The white emission was obtained using two different color-emitting materials (yellow from rubrene-doped $Alq_3$ and blue from DPVBi) with or without a carrier-blocking layer. For enhancing the red emission, two types of devices with three-color emitting materials were fabricated. The white emission, close to the CIE coordinate of (0.3,0.3), was achieved by using two blocking layers as well that as without a blocking layer. This paper covers the subject of controlling the location of exciton recombination zone. It has been found that there is a trade-off in that the devices with three color emitting layers do not show as much luminescence efficiency compared to those with two color emitting layers, but rather, show distinct red emission in the resultant emission spectra. The highest power efficiency was measured to be 1.15lm/W at 2,000 $cd/m^2$ for a structure with two color-emitting layers.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.569-574
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• 2006

Transparent glass-ceramics containing fresnoite crystals have been prepared by controlled heat treatment in $K_2O-BaO-TiO_2-SiO_2$ and their nonlinear optical and luminescent properties were investigated using Maker fringe method and Spectrofluorometer. The second harmonic generation was observed in all samples and the values decreased with increasing $K_2O$ content. The luminescence of blue light at ${\sim}482nm$ could be observed and it was shown that the luminescent property was controlled by the $K_2O$ content.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.383-384
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• 2007

The nano and micro-sized $ZnGa_2O_4$ phosphor were prepared by precipitation method and solid-state method. The luminescence, formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The result of XRD analysis showed that $ZnGa_2O_4$ spinel structure was formed at as-prepared in the case of precipitation method. However, micro-sized phosphor was required high heating treatment to have a satisfactory spinel structure. The CL intensity of nano-sized phosphor was about 4-fold higher than that of micro-sized phosphor. The emission spectra of all $ZnGa_2O_4$ phosphor show a self activated blue emission band at around 420 nm in the wide range of 300~600 nm.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.338-342
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• 2020

Tin oxide (SnO₂) nanocrystals are synthesized by a thermal evaporation method using a mixture of SnO₂ and Mg powders. The synthesis process is performed in air at atmospheric pressure, which makes the process very simple. Nanocrystals with a belt shape start to form at 900 ℃ lower than the melting point of SnO₂. As the synthesis temperature increases to 1,100 ℃, the quantity of nanocrystals increases. The size of the nanocrystals did not change with increasing temperature. When SnO₂ powder without Mg powder is used as the source material, no nanocrystals are synthesized even at 1,100 ℃, indicating that Mg plays an important role in the formation of the SnO₂ nanocrystals at temperatures as low as 900 ℃. X-ray diffraction analysis shows that the SnO₂ nanocrystals have a rutile crystal structure. The belt-shaped SnO₂ nanocrystals have a width of 300~800 nm, a thickness of 50 nm, and a length of several tens of micrometers. A strong blue emission peak centered at 410 nm is observed in the cathodoluminescence spectra of the belt-shaped SnO₂ nanocrystals.

• Journal of Institute of Convergence Technology
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• v.4 no.1
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• pp.21-27
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• 2014

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8:Eu^{2+}$, $MAlSiN_3:Eu^{2+}$ M-SiON(M=Ca, Sr, Ba), ${\alpha}/{\beta}-SiAlON:Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440-460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.11-15
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• 2017

Red phosphors, $Sr_2Si_5N_8:Eu^{2+}$, were synthesized as a single-phase crystal structure by optimizing carbon and $Eu^{2+}$ contents in a carbothermal reduction nitridation method. With increasing $Eu^{2+}$ contents, the photoluminescence spectra were red-shifted from 600 nm peak for 1 mol% for to 700 nm for 7 mol%. It was suggested that this red shift is attributed to the energy transfer from one low-energy sited $Eu^{2+}$ (1) to other high-energy sited $Eu^{2+}$ (2). Finally, the best red sample (620 nm emission peak and 80 nm half width for 3 mole% of $Eu^{2+}$) was packaged on a Blue LED together with two additional green and yellow phosphors, the fabricated White LED showed a high color-rendering index of 90 and white color coordinates of x= 0.321 and y = 0.305.