• Applied Microscopy
• /
• 제27권3호
• /
• pp.257-263
• /
• 1997

Microstructural characterizations of II-VI blue laser diodes which consist of quaternary $Zn_{1-x}Mg_xS_ySe_{l-y}$ cladding layer, ternary $ZnS_ySe_{l-y}$ guiding layer and $Zn_{0.8}Cd_{0.2}Se$ quantum well as active layer were carried out using the transmission electron microscope working at 300 kV. Even though the entire structure is pseudomorphic to GaAs substrate, the structure had contained numerous extended stacking faults and dislocations which had created at ZnSe/GaAs interfaces and then further grown to the top of the epilayers. These faults might be expected to cause the degradation and shortening the lifetime of laser devices.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2012년도 춘계학술대회 논문집
• /
• pp.859-860
• /
• 2012

• 한국결정성장학회지
• /
• 제12권1호
• /
• pp.11-20
• /
• 2002

The world at the end of the $20^{th}$ Century has become "blue" Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

• Journal of the Optical Society of Korea
• /
• 제13권3호
• /
• pp.386-391
• /
• 2009

PSPICE circuit parameters of the blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were extracted directly from the three level rate equations. The relevant optical gain parameters were separately calculated from the self-consistent multiband Hamiltonian. The resulting equivalent circuit model for a blue laser diode was schematically presented, and its modulation characteristics, including the pulse response and the frequency response, have been demonstrated by using a conventional PSPICE.

• 한국세라믹학회지
• /
• 제37권1호
• /
• pp.33-43
• /
• 2000

Up-conversion of rare-earth element added glass is promising area for short wavelength laser source by utilizing high power semiconductor infra-red laser if the efficiency can be increased by proper method. In this study, relatively low phonon energy fluoride glasses were prepared by co-doping rare-earth elements to realize the high efficiency up-convertor. The physical, chemical, andoptical properties of co-doped fluoride glasses were measured. 10 combinations of 5 different rare-earth fluoride elements doped samples were prepared and their transition temperatures, chemical durability, density, hardness, refractive index, absorption, fluorescence, and fluorescence lifetime were measured. 480nm wavelengths blue up-conversion was found in the Yb3+/Tm3+ co-doped glass sample with 800nm laser source and the optimum composition for the most efficient blue up-conversion was found from the glass sample with 0.3 mol% TmF3 and 1 mol% YbF3.

• 대한소아치과학회지
• /
• 제24권1호
• /
• pp.139-147
• /
• 1997

Argon laser used in this case report, is special in having two wavelength of 488, 514nm blue-green visible light spectrum. Blue light is used for composite resin polymerization and caries detection. Green light is used for soft tissue surgery and coagulation. Maximum absorption of this laser light occurs in red pigmentation such as hemoglobin. The argon laser may be well-suited for selective destruction of blood clots and hemangioma with minimal damage to adjacent tissues. Argon laser light penetrates tissue to the 1 mm depth, so its thermal intensity is lower than $CO_2$ laser light. Also, due to its short wavelength it can be focused in a small spot and even single gene can be excised by this laser and microscopy. After applicating argon laser to 4 patient for surgical procedure and to 1 patient for curing the composite resin, following results were obtained. 1. Improved visibility were gained due to hemostasis and no specific technique were needed according to easy recontouring of the tissue. 2. Ability to use by contact mode, tactile sense was superior but tissue dragability and accumulation of tissue on the tip needed sweeping motion. 3. Additive local anesthetic procedure was needed. 4. No suture and less curing time reduced chair time, this made argon laser available in pediatric dentistry.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2014년도 추계학술대회 논문집
• /
• pp.110-111
• /
• 2014

RGB laser 를 이용하여 rf-magnetron sputtering 법으로 합성한 a-IGZO 박막의 photoresponse 를 관찰하였다. Air 분위기에서 red 파장을 조사 할 경우 비교적 slow recovery 특성을 보였으며, green 과 blue 파장을 조사 할 경우 red 보다 fast recovery 특성을 나타내었다. 그러나 진공에서 측정할 경우, red 파장에서는 recovery 가 빨라졌으며, green 과 blue 파장의 경우 recovery 가 매우 느려짐을 확인하였다. 이는 passivation 을 하지 않은 소자의 oxygen gas 의 흡/탈착 때문으로 예상할 수 있었으며, red 파장이 gas 탈착에 기여하는 정도가 매우 작고, green 과 blue 파장이 gas 탈착에 기여하는 정도가 매우 크기 때문인 것으로 생각할 수 있었다. 온도를 증가시킬 경우, 모든 경우에서 recovery 가 빠르게 나타났는데 이는 흡/탈착에 필요한 barrier 및 $V_o{^{2+}}$에서 Vo 로 돌아오기 위한 barrier 를 쉽게 넘어갈 수 있기 때문으로 이해 할 수 있었다. 이러한 결과를 stretched exponential equation 을 이용하여 해석하였으며 수치화 하였다.

• Journal of Information Display
• /
• 제11권1호
• /
• pp.12-16
• /
• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 1998년도 추계연구발표회 논문개요집
• /
• pp.24-25
• /
• 1998

• 전자공학회논문지
• /
• 제53권9호
• /
• pp.129-134
• /
• 2016

본 논문은 허상 디스플레이의 광원으로 적용되는 고휘도 레이저의 접합온도에 따른 파장 변이(an optical quenching) 제어와 광 출력 효율 증대를 위한 제어 방법에 대해 연구하였다. 차량용 헤드업 디스플레이(Head-up Display)와 같은 허상 디스플레이(Virtual Display)는 외부 조도 환경의 영향을 받는 디스플레이 특성으로 인하여 디스플레이 휘도와 광효율 측면의 기술요소에 대한 해결 방법이 요구된다. 태양광의 영향으로 인하여 헤드업 디스플레이는 고휘도 광원에 대한 필요가 증대되고 있으며, 이러한 문제점을 해결하기 위하여 고휘도 청색 레이저 광원이 검토되고 있다. 그러나 낮은 레이저 접합 온도 특성의 단점을 갖고 있어 수명 감소와 광효율 감소라는 문제점을 지니고 있으며 특히 청색 파장 변이를 일으키는 원인이 된다. 이러한 문제점을 해결하기 위하여 고주파 펄스폭 변조 방식의 전류인가 방법과 황색 형광 물질을 사용한 칼라 휠 방식의 DMD(digital micro mirror device) 초소형 패널을 적용하였다. 적응형 펄스폭 변조 방식의 주파수와 듀티비 분석과 최적화를 통하여 청색 레이저의 파장 변이를 방지하고 37%의 광효율을 증대 효과를 얻었다.