• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.267-272
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• 2021

In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grass-type black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 ㎛ was formed at radio-frequency (RF) power of 150 - 170 W. The process pressure was 250 mTorr, the O₂/SF₆ gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of Si_xO_yF_z did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 10³ to 25 × 10³ cps. When the Ag thickness was 150 nm, the increase declined to 30 × 10³ cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 10³ to 33 × 10³ cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 10³ cps.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.207-212
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• 2011

In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.496-500
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to significantly impact terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (RIE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi-Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7% efficiency of mono-crystalline silicon solar cell and 10.2% multi-crystalline silicon solar cell.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.352-362
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• 2012

This paper explores the use of a variety of carbon nanoparticles to impart electrical, thermal conductivity, good frictional properties to silicon nitride matrices. We used the highly promising types of carbon as carbon nanotubes, exfoliated graphene and carbon black nanograins. A high-efficiency attritor mill has also been used for proper dispersion of second phases in the matrix. The sintered silicon nitride composites retained the mechanical robustness of the original systems. Bending strength as high as 700 MPa was maintained and an electrical conductivity of 10 S/m was achieved in the case of 3 wt% multiwall carbon nanotube addition. Electrically conductive silicon nitride ceramics were realized by using carbon nanophases. Examples of these systems, methods of fabrication, electrical percolation, mechanical, thermal and tribological properties are discussed.

• Journal of the Korea Organic Resources Recycling Association
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• v.32 no.1
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• pp.39-47
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• 2024

In this study, LiDAR-detective black material is synthesized by recycling silicon sludge (SS) that is generated from semiconductor manufacturing process, and its recognition is confirmed using two types of LiDAR sensors (MEMS and Rotating LiDAR). In detail, metal impurities on the surface of SS is removed, followed by coating of titanium dioxide (TiO₂) and subsequent chemical reduction to obtain SS-derived black TiO₂ (SS/bTiO₂) material. As-prepared SS/bTiO₂ is mixed with transparent paint to prepare hydrophilic black paints and applied to a glass substrate using a spray gun. SS/bTiO₂-based paint shows similar blackness (L^*=15.7) compared to commercial carbon black-based paint, and remarkable NIR reflectance (26.5R%, 905nm). Furthermore, MEMS and Rotating LiDAR have successfully detected the SS/bTiO₂-based paint. This is attributed to the occurrence of high reflection of light at the interface between the black TiO₂ and the silicon sludge according to the Fresnel's reflection principle. Hence, the new application field to effectively recycle silicon sludge generated in the semiconductor manufacturing process has been presented.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.10-14
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.246-249
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• 2013

Nano-sized ${\beta}$-SiC nanoparticles were synthesized combined with a sol-gel process and a carbothermal process. TEOS and carbon black were used as starting materials for the silicon source and carbon source, respectively. $SiO_2$ nanoparticles were synthesized using a sol-gel technique (Stober process) combined with hydrolysis and condensation. The size of the particles could be controlled by manipulating the relative rates of the hydrolysis and condensation reactions of tetraethyl orthosilicate (TEOS) within the micro-emulsion. The average particle size and morphology of synthesized silicon dioxide was about 100nm and spherical, respectively. The average particles size and morphology of the used carbon black powders was about 20nm and spherical, respectively. The molar ratio of silicon dioxide and carbon black was fixed to 1:3 in the preparation of each combination. $SiO_2$ and carbon black powders were mixed in ethanol and ball-milled for 12 h. After mixing, the slurries were dried at $80^{\circ}C$ in an oven. The dried powder mixtures were placed in alumina crucibles and synthesized in a tube furnace at $1400{\sim}1500^{\circ}C$ for 4 h with a heating rate of $10^{\circ}C$/min under flowing Ar gas (160 cc/min) and furnace cooling down to room temperature. SiC nanoparticles were characterized by XRD, TEM, and SAED. The XRD results showed that high purity beta silicon carbide with excellent crystallinity was synthesized. TEM revealed that the powders are spherical shape nanoparticles with diameters ranging from 15 to 30 nm with a narrow distribution.

• Current Optics and Photonics
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• v.8 no.4
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• pp.399-405
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• 2024

In this paper, an optical modulator based on monolayer graphene and triple-layer black phosphorus (BP) heterojunction in the optical communication band range is designed. The influences of geometric parameters, chemical potential, BP orientation and dispersion on the fundamental mode of this modulator were determined in detail by the finite-difference time-domain (FDTD) method. Using appropriate geometric parameter settings, the extinction ratio of this proposed modulator is 0.166 dB, while the modulator with a working length of 3 ㎛ can realize a 0.498 dB modulation depth. The 3-dB bandwidth of this modulator could achieve up to 2.65 GHz with 27.23 fJ/bit energy consumption. The extinction ratio and bandwidth of the proposed modulator increased by 66% and 120.83%, respectively, compared to the monolayer graphene-based ridge-type waveguide modulator. Energy consumption was reduced by 97.28%, compared to a double-layer graphene-based modulator.

• Journal of the Korean Ceramic Society
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• v.45 no.7
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• pp.430-437
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• 2008

Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1700 to $1850^{\circ}C$ using SiC, silicon (Si), and three different carbon (C) sources, including carbon black, phenol resin, and xylene. The effects of the Si:C ratio and carbon source on porosity and strength were investigated as a function of sintering temperature. Porous SBSC ceramics fabricated from phenol resin showed higher porosity than the others. In contrast, porous SBSC ceramics fabricated from carbon black showed better strength than the others. Regardless of the carbon source, the porosity increased with decreasing the Si:C ratio whereas the strength increased with increasing the Si:C ratio.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.18-18
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• 2008

3차원 패키징 System In Package (SIP)구조에서 Chip to Chip 단위 Interconnection 역할을 하는 Through Silicon Via(TSV)를 형성하기 위하여 Pulsating RF bias가 장착된 Inductively Coupled Plasma Etcher 장비를 이용하였다. 이 Pulsating 플라즈마 공정 방법은 주기적인 펄스($50{\sim}500Hz$)와 듀티($20{\sim}99%$) cycle 조절이 가능하며, 플라즈마 에칭특성에 영향을 주는 플라즈마즈마 발생 On/Off타임을 조절할 수 있다. 예를 들면, 플라즈마 발생 Off일 경우에는 이온(SFx+, O+)과 래디컬(SF*, F*, O*)의 농도 및 활성도를 급격하게 줄이는 효과를 얻을 수가 있는데, 이러한 효과는 식각 에칭시, 이온폭격의 손상을 급격하게 줄일 수 있으며, 실리콘 표면과 래디컬의 화학적 반응을 조절하여 에칭 측벽 식각 보호막 (SiOxFy : Silicon- Oxy- Fluoride)을 형성하는데 영향을 미친다. 그리고, TSV 형성에 있어서 큰 문제점으로 지적되고 있는 언더컷과 수평에칭 (Horizontal etching)을 개선하기 위한 방법으로, Black-Siphenomenon을 이번 실험에 적용하였다. 이 Black-Si phenomenon은 Bare Si샘플을 이용하여, 언더컷(Undercut) 및 수평 에칭 (Horizontal etching)이 최소화 되는 공정 조건을 간편하게 평가 할 수 있는 방법으로써, 에칭 조건 및 비율을 최적화하는 데 효율적이었다. 결과적으로, Pulsating RF bias가 장착된 Inductively Coupled Plasma Etcher 장비를 이용한 에칭실험은 펄스 주파수($50{\sim}500Hz$)와 듀티($20{\sim}99%$) cycle 조절이 가능하여, 이온(SFx+, O+)과 래디컬(SF*, F*, O*)의 농도와 활성화를 조절 하는데 효과적이었으며, Through Silicon Via (TSV)를 형성 하는데 있어서 Black-Si phenomenon 적용은 기존의 Continuous 플라즈마 식각 결과보다 향상된 에칭 조건 및 에칭 프로파일 결과를 얻는데 효과적이었다.