• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.94-97
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• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

• 한국세라믹학회지
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• 제48권6호
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• pp.630-635
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• 2011

Bismuth vanadate($BiVO_4$) with monoclinic phase as photocatalyst under visible light is synthesized by precipitation reaction in hot water. Properties such as crystal phase, particle morphology and visual light absorbance as well as the effects of thermal treatment for $BiVO_4$ powders are investigated. $BiVO_4$ powders with both single monoclinic phase and 0.2 ${\mu}m$ in particle size are synthesized when precipitate is stirred in water for 5 h at 95$^{\circ}C$. Well-developed monoclinic phase and light absorption property under 535 nm are observed as a result of thermal treatment for 1 h at 300$^{\circ}C$ after precipitation reaction in water for 5 h at 95$^{\circ}C$. Degradation of monoclinic crystal is found in firing above 350$^{\circ}C$, and particle growth is occurred in firing above 550$^{\circ}C$.

• 한국세라믹학회지
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• 제51권4호
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• pp.260-264
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• 2014

We developed a novel double dopant bismuth oxide system with Tb and W. When Tb was doped as a single dopant, a Tb dopant concentration more than 20 mol% was required to stabilize bismuth oxides with a high conductivity cubic structure. High temperature XRD analysis of 25 mol% Tb-doped bismuth oxide (25TSB) confirmed that the cubic structure of 25TSB was retained from room temperature to $700^{\circ}C$ with increase in the lattice parameter. On the other hand, we achieved the stabilization of high temperature cubic phase with a total dopant concentration as low as ~12 mol% with 8 mol% Tb and 4 mol% W double dopants (8T4WSB). Moreover, the measured ionic conductivity of 10T5WSB was much higher than 25TSB, thus demonstrating the feasibility of the double dopant strategy to develop stabilized bismuth oxide systems with higher oxygen ion conductivity for the application of SOFC electrolytes at reduced temperature. In addition, we investigated the long-term stability of TSB and TWSB electrolytes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.152-156
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• 2000

Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Nuclear Engineering and Technology
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• 제56권4호
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• pp.1213-1224
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• 2024

The liquid lead-bismuth cooled fast reactor has been in a single-phase, low-pressure, and high-temperature state for a long time during operation. Considering the requirement of calculation efficiency for long-term transient accident calculation, based on a homogeneous hydrodynamic model, one-dimensional heat conduction model, coolant flow and heat transfer model, neutron kinetics model, coolant and material properties model, this study used the fully implicit difference scheme algorithm of the convection-diffusion term to solve the basic conservation equation, to develop the transient analysis program NUSOL-LMR 2.0 for the lead-bismuth fast reactor system. The steady-state and typical design basis accidents (including reactivity introduction, loss of flow caused by main pump idling, excessive cooling, and plant power outage accidents) for the ABR have been analyzed. The results are compared with the international system analysis software ATHENA. The results indicate that the developed program can stably, accurately, and efficiently predict the transient accident response and safety characteristics of the lead-bismuth fast reactor system.