• Title/Summary/Keyword: Biot-Savarts law

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ELF 3D Magnetic Field and Eddy Current Calculation of Human Body Around Transmission Lines (송전선로 주변의 3차원 자기장 및 인체 유도 와전류 계산)

  • Myeong, Seong-Ho;Lee, Dong-Il;Sin, Gu-Yong;Han, In-Su;Park, Jong-Geun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.10
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    • pp.485-491
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    • 2002
  • Since Wertheimer and Leeper reported possible adverse health effects of magnetic field in 1979, worldwide researches on this issue have been conducted. More recently, the U.S. Congress instructed the NIEHS (National Institute of Environmental Health Sciences), NIH (National Institute of Health) and DOE (Department of Energy) to direct and manage EMF RAPID (Electric and Magnetic Fields Research and Public Information Dissemination) program aimed at providing scientific evidence to clarify the potential for health risks from exposure to extremely low frequency electric and magnetic fields(ELF-EMF). Although they concluded that the scientific evidence suggesting adverse health risks of ELF-EMF is weak, the exposure to ELF-EMF cannot be recognized as entirely safe. Therefore, the purpose of this article is to describe magnetic field 3-D calculation and to evluate eddy current of human body compare to international guide line recognized one of the basic problems. In open boundary problem, Magnetic field using FEM is not advantageous in the point of the division of area and the proposition of the fictitious boundary. Therefore, we induced the analytic equation of magnetic field calculations so but the finite line segment based on Biot-Savarts law Also, Eddy currents induced due to ELF-EMF magnetic field are computed. To calculate induced currents, impedance method is used in this paper, An example model of human head with resolution of 1.27cm is used. In this paper, We evaluate the magnetic field and eddy current of human head around 765 kV transmission lines compare to international guide line.

Analysis of I-V Characteristics in the Multi-channel Superconducting Vortex Flow Transistor (다채널 고온 초전도 볼텍스 유동 트랜지스터의 I-V 특성 해석)

  • 고석철;강형곤;임성훈;최효상;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.10
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    • pp.931-937
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    • 2003
  • The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a computer program.

Vortex Dynamics of Superconducting Flux Flow Transistor in a Channel (채널부분의 초전도 자속 흐름 트랜지스터 볼텍스 동력학)

  • Ko, Seok-Cheol;Kang, Hyeong-Gon;Lim, Sung-Hun;Lee, Jong-Hwa;Han, Byoung-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.546-549
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    • 2003
  • The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a Matlab program.

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