Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
- /
- Pages.546-549
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- 2003
Vortex Dynamics of Superconducting Flux Flow Transistor in a Channel
채널부분의 초전도 자속 흐름 트랜지스터 볼텍스 동력학
- Ko, Seok-Cheol (Jeonbuk National Univ.) ;
- Kang, Hyeong-Gon (Jeonbuk National Univ.) ;
- Lim, Sung-Hun (Jeonbuk National Univ.) ;
-
Lee, Jong-Hwa
(Jeonbuk National Univ.)
;
- Han, Byoung-Sung (Jeonbuk National Univ.)
- 고석철 (전북대학교 전자정보공학부) ;
- 강형곤 (전북대학교 반도체물성연구소) ;
- 임성훈 (전북대학교 전자정보공학부) ;
-
이종화
(전북대학교 전자정보공학부)
;
- 한병성 (전북대학교 전자정보공학부)
- Published : 2003.07.10
Abstract
The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a Matlab program.