• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.8
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• pp.880-886
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• 2007

We have proposed a new "hybrid" envelope elimination and restoration(EER) transmitter architecture using an efficiency optimized power amplifier(PA) and modified bias modulator. The efficiency of the PA at the average drain voltage is very important for the overall transmitter efficiency because the PA operates mostly at the average power region of the modulation signal. Accordingly, the efficiency of the PA has been optimized at the region. Besides, the bias modulator has been accompanied with the emitter follower for the minimization of memory effect. A saturation amplifier, class $F^{-1}$ is built using a 5-W PEP LDMOSFET for forward-link single-carrier wideband code-division multiple-access(WCDMA) at 1-GHz. For the interlock experiment, the bias modulator has been built with the efficiency of 64.16% and peak output voltage of 31.8 V. The transmitter with the proposed PA and bias modulator has been achieved an efficiency of 44.19%, an improvement of 8.11%. Besides, the output power is enhanced to 32.33 dBm due to the class F operation and the PAE is 38.28% with ACLRs of -35.9 dBc at 5-MHz offset. These results show that the proposed architecture is a very good candidate for the linear and efficient high power transmitter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.145-148
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• 2001

A large area plasma source using parallel $2{\times}2$ ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with $CH_4$ gas chemistry is optimized with the DOE (Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on $350{\times}300mm$ substrate at the 50Hz magnetization frequency of the E-ICP operation technique,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.145-148
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• 2001

A large area plasma source using parallel 2x2 ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with CH$_4$ gas chemistry is optimized with the DOE(Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on 350x300mm substrate at the 50Hz magnetization frequency of the E-ICP operation technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.834-837
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• 2004

BST thin films were etched with inductively coupled $CF_4(C1_2+Ar)$ Plasmas. The maximum etch rate of the BST thin films was 53.6 nm/min for a 10 % $CF_4$ to the $Cl_2/Ar$ gas mixture at RF power of 700 W, DC bias of -150 V, and chamber pressure of 2 Pa. Small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. Consequently, the increased chemical effect caused the increase in the etch rate of the BST thin films. To clarify the etching mechanism, the surface reaction of the BST thin films was investigated by X-ray photoelectron spectroscopy.

• Journal of Power Electronics
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• v.6 no.1
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• pp.73-82
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• 2006

Plasma display panels (PDPs) have a serious thermal problem, because the luminance efficiency of a conventional PDP is about 1.5 1m/W and it is less than $3\~5\;lm/W$ of a cathode ray tube (CRT). Thus there is a need for improving the luminance efficiency of the PDP. There are several approaches to improve the luminance efficiency of the PDP and we adopted a driving PDP at high frequency range from 400kHz up to over 700kHz. Since a PDP is regarded as an equivalent inherent capacitance, many types of sustaining drivers have been proposed and widely used to recover the energy stored in the PDP. However, these circuits have some drawbacks for driving PDPs at high frequency ranges. In this paper, we investigate the effect of the parasitic components on the PDP itself and on the driver when the reactive energy of the panel is recovered. Various drivers are classified and evaluated based on their suitability for high frequency drivers. Finally, a current-fed driver with a DC input voltage bias is proposed. This driver overcomes the effect of parasitic components in the panel and driver. It fully achieves a ZVS of all full-bridge switches and reduces the transition time of the panel polarity. It is tested to validate the high frequency sustaining driver and the experimental results are presented.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1028-1034
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• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• Journal of Environmental Science International
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• v.19 no.8
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• pp.983-999
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• 2010

Wind power energy is one of the favorable and fast growing renewable energies. It is most important for exact analysis of wind to evaluate and forecast the wind power energy. The purpose of this study is to improve the performance of numerical atmospheric model by data assimilation over a complex coastal area. The benefit of the profiler is its high temporal resolution and dense observation data at the lower troposphere. Three wind profiler sites used in this study are inhomogeneously situated near south-western coastal area of Korean Peninsula. The method of the data assimilation for using the profiler to the model simulation is the three-dimensional variational data assimilation (3DVAR). The experiment of two cases, with/without assimilation, were conducted for how to effect on model results with wind profiler data. It was found that the assimilated case shows the more reasonable results than the other case compared with vertical observation and surface Automatic Weather Station(AWS) data. Although the effect of sonde data was better than profiler at a higher altitude, the profiler data improves the model performance at lower atmosphere. Comparison with the results of 4 June and 5 June suggests that the efficiency with hourly assimilated profiler data is strongly influenced by synoptic conditions. The reduction rate of Normalized Mean Error(NME), mean bias normalized by averaged wind speed of observation, on 4 June was 28% which was larger than 13% of 5 June. In order to examine the difference in wind power energy, the wind power density(WPD) was calculated and compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.48-48
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• 2009

최근 빠른 동작속도와 고 집적도를 얻기 위해 metal oxide semiconductor field effect transistor (MOSFET) 의 크기는 계속 해서 줄어들고 있다. 동시에 게이트의 절연층도 얇아지게 된다. 절연층으로 사용되는 $SiO_2$ 의 두께가 2nm 이하로 얇아 지게 되면 터널링에 의해 누설 전류가 발생하게 된다. 이 문제를 해결하기 위해 $SiO_2$ 를 대체할 고유전체 물질의 연구가 활발하다. 고유전체 물질 중에는 $ZrO_2,\;Al_2O_3,\;HfO_2$ 등이 많이 연구 되어 왔다. 하지만 유전상수 이외에 band gap energy, thermodynamic stability, recrystallization temperature 등의 특성이 좋지 않아 대체 물질로 문제점이 있다. 이를 보안하기 위해 산화물을 합금과 결합시키면 서로의 장점들이 합쳐져 기준들을 만족하는 물질을 만들 수 있고 $HfAlO_3$가 그 중 하나이다. Al를 첨가하는 이유는 문턱전압을 낮추기 위해서다. $HfAlO_3$는 유전상수 18.2, band gap energy 6.5 eV, recrystallization temperature 800 $^{\circ}C$이고 열역학적 특성이 안정적이다. 게이트 절연층은 전극과 기판사이에 적층구조를 이루고 있어 이방성인 드라이 에칭이 필요하고 공정 중 마스크물질과의 선택비가 높아야한다. 본 연구는 $HfAlO_3$박막을 $BCl_3/Ar,\;N_2/BCl_3/Ar$ 유도결합 플라즈마를 이용해 식각했다. 베이스 조건은 RF Power 500 W, DC-bias -100 V, 공정압력 15 mTorr, 기판온도 40 $^{\circ}C$ 이다. 가스비율, RF Power, DC-bias, 공정 압력에 의한 마스크물질과 의 선택비를 알아보았다.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.229-233
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• 1993

The effects of differential partial pressures of oxygen during sputtering on the magnetic and recording characteristics of magneto-optical disks were investigated. Different flows of oxygen were deliberately introduced into the sputtering chamber to have a variety of partial pressures of oxygen during sputtering. A residual gas analyzer was employed to monitor the oxygen peak before, during, and after sputtering and to estimate the reacted oxygen amount. Most of the oxygen introduced into the chamaber was reacted during sputtering. As the partial pressure of oxygen increased, the oxygen content of the TbFeCoCr film increased also. The oxygen appeared to be bound as Tb-O, effectively decreasing the magnetically active Tb content of the film The coercivity decreased but the squareness of the Kerr hysteresis loops was still excellent. The perpendicular anisotropy was not significantly affected by oxygen amount. The carrier-to-noise ratio, includi!1g the write power sensitivity and bias field sensitivity did not change too much with oxygen content in the film The disks sputtered with oxygen showed better bias field sensitivity with lower write power threshold than the disk sputtered without oxygen, due to high demagnetization during domain formation. No significant degradation of coercivity for the disk sputtered oxygen was observed during an accelerated aging test.