• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.1
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• pp.12-18
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• 2003

Recently the research for utilization of waste heat produced from electric power plants, casting factories, heat treating factories or commercial building are being afforded by the need for energy saving. The objective of this study is to develop a thermoelectric generation system which converts unused energy from close-at-hand sources such as garbage incineration heat and industrial exhaust etc. into electricity. This paper presents a thermoelectric technology on a optimum system design method and efficiency and cost effective thermoelectric element on order to extract the maximum power output from energy conversion of waste energy. It is shown that the longitudinal stresses of module contacted with two point constrained AI tubes could be released more than those with a one-point constrained.

• Vacuum Magazine
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• v.1 no.4
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• pp.21-24
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• 2014

Thermolectric devices could convert temperature gradient into electricity (Seebeck effect) and electric power into temperature gradient across the themoelectric element (Peltier effect). $Bi_2Te_3$ has been widely used as thermoelectric material for more than 40 years, due to the superior thermoelctric characteristics. However, Bi and Te materials are predicted to face supply shortage, giving strong necessity for the development of new thermoelctric materials. Based on the theoretical prediction, nanostructure are expected to give dramatic enhnacement of thermoelectirc characteristics by controlling phonon propagation. Thus, silicon, which had been considered as improper material for thermoelectricity, is now being considered as strong cadidate material for thermoelectricity. This review will focus on the nanotechnology applied research activities in silicon as thermoelectric materials.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• Korean Journal of Materials Research
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• v.33 no.7
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• pp.295-301
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• 2023

Thermoelectric (TE) energy harvesting, which converts available thermal resources into electrical energy, is attracting significant attention, as it facilitates wireless and self-powered electronics. Recently, as demand for portable/wearable electronic devices and sensors increases, organic-inorganic TE films with polymeric matrix are being studied to realize flexible thermoelectric energy harvesters (f-TEHs). Here, we developed flexible organic-inorganic TE films with p-type Bi_0.5Sb_1.5Te₃ powder and polymeric matrices such as poly(3,4-eethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and poly (vinylidene fluoride) (PVDF). The fabricated TE films with a PEDOT:PSS matrix and 1 wt% of multi-walled carbon nanotube (MWCNT) exhibited a power factor value of 3.96 µW·m^-1·K^-2 which is about 2.8 times higher than that of PVDF-based TE film. We also fabricated f-TEHs using both types of TE films and investigated the TE output performance. The f-TEH made of PEDOT:PSS-based TE films harvested the maximum load voltage of 3.4 mV, with a load current of 17.4 µA, and output power of 15.7 nW at a temperature difference of 25 K, whereas the f-TEH with PVDF-based TE films generated values of 0.6 mV, 3.3 µA, and 0.54 nW. This study will broaden the fields of the research on methods to improve TE efficiency and the development of flexible organic-inorganic TE films and f-TEH.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.11a
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• pp.43-43
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.331-331
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• 2003

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.38-38
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.134-135
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• 2004

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.129-129
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• 2017

열전재료는 열에너지를 전기에너지로 또는 전기에너지를 열에너지로 직접 변환하는데 가장 널리 사용되는 재료이다. $Bi_2Te_3$계 열전 재료는 400K 이하의 비교적 저온 영역에서 높은 성능지수(Dimensionless Figure of merit, ZT($={\alpha}2{\sigma}T/{\kappa}$, ${\alpha}$: 제백계수, ${\sigma}$: 전기전도도, T: 절대온도, ${\kappa}$: 열전도도))를 나타내는 열전재료이며 자동차 시트나 정수기 등에 응용되고 있다. 열전모듈은 제조시 수십 개에서 수백 개 이상의 n형 및 p형 열전소자를 알루미나($Al_2O_3$)와 같은 세라믹 기판(substrate) 상에 접합된 동 전극 위에 전기적으로 서로 직렬로 접합시켜 제조한다. 기존의 열전모듈의 제조방법에는 동 전극 위에 위에 Sn합금 분말과 플럭스(flux)의 혼합물인 솔더페이스트를 스크린 인쇄법을 사용하여 동 전극에 도포한 다음, 그 위에 열전소자를 얹고 약 520K의 열풍을 가하여 솔더를 용융시켜 열전소자와 동 전극을 접합시킨다. 스크린 인쇄법에서는 인쇄 압력이 일정하지 않으면, 솔더페이스트 층의 두께가 균일하지 않게 되어 열전소자 접합부의 불량을 유발시킨다. 그러나 열모듈은 단 하나의 접합 불량이 모듈 전체의 열전변환성능에 심각한 영향을 줄 수 있기 때문에 본 연구에서는 이러한 문제점을 해결하기 위해, 솔더페이스트를 도포하지 않고 열전소자를 직접 동 전극과 접합할 수 있는 방법을 고안하였다. 무전해도금을 이용한 니켈층을 형성시킨 $Bi_2Te_3$계 열전소자 표면에 약 $50{\mu}m$의 주석도금층을 전기도금법을 구사하여 형성시켰다. 그 후, wire cutting을 통하여 $3mm{\times}3mm{\times}3mm$의 크기로 절단한 주석도금된 열전소자를 동 전극에 얹고 1.1KPa의 압력을 가하면서 523K의 핫플레이트 위에서 3분간 방치하여 직접(direct) 열압착 접합을 실시하였다. 접합부의 단면을 SEM을 이용하여 관찰한 결과, 동 전극과 열전소자 사이의 계면에 용융 후 응고된 주석층이 결함없이 균일하게 형성된 양호한 접합부를 관찰할 수 있었다. 따라서, 솔더페이스트를 이용하지 않고, 열전소자 표면에 주석도금을 실시한 후, 동 전극과 직접 열압착 본딩을 실시하는 방법은 균일한 접합계면을 얻을 수 있는 새로운 공정으로 기대된다.

• Journal of Powder Materials
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• v.23 no.4
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• pp.263-269
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• 2016

Graphene oxide (GO) powder processed by Hummer's method is mixed with p-type $Bi_2Te_3$ based thermoelectric materials by a high-energy ball milling process. The synthesized GO-dispersed p-type $Bi_2Te_3$ composite powder has a composition of $Bi_{0.5}Sb_{1.5}Te_3$ (BSbT), and the powder is consolidated into composites with different contents of GO powder by using the spark plasma sintering (SPS) process. It is found that the addition of GO powder significantly decreases the thermal conductivity of the pure BSbT material through active phonon scattering at the newly formed interfaces. In addition, the electrical properties of the GO/BSbT composites are degraded by the addition of GO powder except in the case of the 0.1 wt% GO/BSbT composite. It is found that defects on the surface of GO powder hinder the electrical transport properties. As a result, the maximum thermoelectric performance (ZT value of 0.91) is achieved from the 0.1% GO/BSbT composite at 398 K. These results indicate that introducing GO powder into thermoelectric materials is a promising method to achieve enhanced thermoelectric performance due to the reduction in thermal conductivity.