($Bi_2Te_3$ doped $Ge_2Sb_2Te_5$ Thin Films for the Phase Change Random Access Memory Application

  • Oh, Jin-Ho (School of Materials Science and Engineering, Seoul National University) ;
  • Ryu, Seung-Wook (School of Materials Science and Engineering, Seoul National University) ;
  • Lee, Jong-Ho (School of Materials Science and Engineering, Seoul National University) ;
  • Park, Hae-Chan (R&D Division, Hynix Semiconductor Inc.) ;
  • Hong, Suk-Kyoung (R&D Division, Hynix Semiconductor Inc.) ;
  • Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University)
  • Published : 2007.11.16