• Journal of the Korean Ceramic Society
• /
• v.26 no.1
• /
• pp.139-145
• /
• 1989

An eutectic melt in the system(Bi2O3)0.85·(Nb2O5)0.15-6Bi2O3·SiO2 was unidirectionally solidfield at a rate of 0.5mm/h under a thermal gradient of 100℃/cm. Double crucibles and seed crystal plate were used in order to botain the composite crystals which had uniform microstructure throughout the ingot. The obtained composite crystals showed uniform microstructure, in which needle-like δ-(Bi2O3)0.85·(Nb2O5)0.15 crystals were arrayed in parallel in a matrix of γ-6Bi2O3·SiO2 single crystal. It was found that the <110> direction of δ-(Bi2O3)0.85·(Nb2O5)0.15 crystal was essentially parallel to the <111> direction of γ-6Bi2O3·SiO2 crystal in the composite crystals. A transverse thin plate of the composite crystals showed a high resolution optical transmission like an optical fiber array, and sharp chatoyancy was observed in the cabochon shaped composite crystals. Then, this may be useful for applications such as screen of a cathode ray tube or artificial cat's eye gem stones.

• Journal of Powder Materials
• /
• v.14 no.6
• /
• pp.354-361
• /
• 2007

The bi-materials with Al-Mg alloy and its composites reinforced with SiC and $Al_2O_3$ particles were prepared by conventional powder metallurgy method. The A1-5 wt%Mg and composite mixtures were compacted under $150{\sim}450\;MPa$, and then the mixtures compacted under 400 MPa were sintered at $773{\sim}1173K$ for 5h. The obtained bi-materials with Al-Mg/SiCp composite showed the higher relative density than those with $Al-Mg/Al_2O_3$ composite after compaction and sintering. Based on the results, the bi-materials compacted under 400 MPa and sintered at 873K for 5h were used for mechanical tests. In the composite side of bi-materials, the SiC particles were densely distributed compared to the $Al_2O_3$ particles. The bi-materials with Al-Mg/SiC composite showed the higher micro-hardness than those with $Al-Mg/Al_2O_3$ composite. The mechanical properties were evaluated by the compressive test. The bi-materials revealed almost the same value of 0.2% proof stress with Al-Mg alloy. Their compressive strength was lower than that of Al-Mg alloy. Moreover, impact absorbed energy of bi-materials was smaller than that of composite. However, the bi-materials with Al-Mg/SiCp composite particularly showed almost similar impact absorbed energy to $Al-Mg/Al_2O_3$ composite. From the observation of microstructure, it was deduced that the bi-materials was preferentially fractured through micro-interface between matrix and composite in the vicinity of macro-interface.

• Journal of Powder Materials
• /
• v.11 no.6 s.47
• /
• pp.462-466
• /
• 2004

The bi-materials composed of $Al-5wt{\%}Mg$ and its composite reinforced with SiC particles were prepared by ball-milling and subsequent sintering process. The size of powder in Al-Mg/SiCp mixture decreased with increasing ball-milling time, it was saturated above 30 h when the ball and powder was in the ratio of 30 to 1. Both $Al-5wt{\%}Mg$ powders mixture and $Al-5wt{\%}Mg/SiCp$ mixture were compacted under a pressure of 350MPa and were bonded by sintering at temperatures ranging from 873K to 1173K for 1-5h. At 873k, the sound bi-mate-rials could not be obtained. In contrast, the bi-materials with the macroscopically well-bonded interface were obtained at higher temperatures than 873K. The length of well-bonded interface became longer with increasing temperature and time, indicating the improved contact in the interface between unreinforced Al-Mg part and Al-Mg/SiCp composite part. The relative density in the bi-materials increased as the sintering temperature and time increased, and the bi-materials sintered at 1173K for 5h showed the highest density.

• Journal of the Korean Ceramic Society
• /
• v.23 no.2
• /
• pp.13-20
• /
• 1986

Composite polycrystals including ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystal which have needlelike regular structure are useful for the high resolution optical devices. For the purpose of obtaining the composite polycrystals described above the melts of eutectic composition in the three eutectic systems including $6Bi_2O_3$.$SiO_2$ composition were unidirectionally solidified at a rate of 0.05 and 0.25 cm/h under a thermal gradient of 10$0^{\circ}C$/m. Composite polycrystals of relatively regular structure in which needlelike ${\gamma}$-$6Bi_2O_3$.$SiO_2$ crystals were arrayed in parallel with $2Bi_2O_3$.$B_2O_3$ crystal matrix were obtained when the eutectic melt of $6Bi_2O_3$.$SiO_2 -2Bi_2O_3$.$B_2O_3$ system was solidified at a rate of 0.25 cm/h. Partial structural irregularity however was found in the obtained composite polycrystals.

• Journal of the Korean Vacuum Society
• /
• v.14 no.1
• /
• pp.29-34
• /
• 2005

The degradation of the SiGe hetero-junction bipolar transistor(HBT) properties in SiGe BiCMOS process was investigated in this paper. The SiGe HBT prepaired by SiGe BiCMOS process, unlike the conventional one, showed the degraded DC characteristics such as the decreased Early voltage, the decreased collector-emitter breakdown voltage, and the highly increased base leakage current. Also, the cutoff frequency(f/sub T/) and the maximum oscillation frequency(f/sub max/) representing the AC characteristics are reduced to below 50%. These deteriorations are originated from the change of the locations of emitter-base and collector-base junctions, which is induced by the variation of the doping profile of boron in the SiGe base due to the high-temperature source-drain annealing. In the result, the junctions pushed out of SiGe region caused the parastic barrier formation and the current gain decrease on the SiGe HBT device.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.2
• /
• pp.119-123
• /
• 2006

This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2002.05a
• /
• pp.129-129
• /
• 2002

• Proceedings of the Korean Vacuum Society Conference
• /
• 1995.02a
• /
• pp.67-67
• /
• 1995

• Journal of the Korean Vacuum Society
• /
• v.2 no.2
• /
• pp.227-235
• /
• 1993

$SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.200-201
• /
• 2007

The SBT($SrBi_2Ta_2O_9$) thin films with $Bi_2O_3$ buffer layer were deposited on Pt/Ti/$SiO_2$/Si substrate by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics. In SBT thin films, the deficiency of bismuth during the process due to its volatility results in an obvious non stoichiometry of the films and the presence of secondary phases. $Bi_2O_3$ buffer layer was found to be effective to achieve the low temperature crystallization and improve the ferroelectric properties of SBT thin films. Ferroelectric properties and crystallinities of SBT thin films with various post annealing of $Bi_2O_3$ buffer layer were observed as various annealing temperature, using X-Ray Diffraction (XRD), scanning electron microscopy (SEM), Keithley 237 and HP 4192A Impedance Analyzer.