• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.168-171
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• 2003

Bismuth layered structure, Cerium-substituted $Bi_4Ti_3O_{12}$ ($(Bi,Ce)_4Ti_3O_{12}$) thin films were prepared on the $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition method. We investigated the Ce-subsitituted effect on the grain orientation and ferroelectric properties. $Ce^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of BTO decreased the deeree of c-axis orientation and increased the remanent polariation (2Pr). The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The $(Bi,Ce)_4Ti_3O_{12}$ (BCT) thin films, which were annealed $700^{\circ}C\;and\;800^{\circ}C$ for 10min and 30min, showed a perovskite phase and dense microstructure. As the thickness of the BCT film was decresed that the ferroelectric properties of the BCT thin films were good.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.386-392
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• 2021

Multiferroics exhibiting the coexistence and a possible coupling of ferromagnetic and ferroelectric order are attracting widespread interest in terms of academic interests and possible applications. However, room-temperature single-phase multiferroics with soft ferromagnetic and displacive ferroelectric properties are still rare owing to the contradiction in the origin of ferromagnetism and ferroelectricity. In this study, we demonstrated that sizable ferromagnetic properties are induced in the ferroelectric bismuth ferrite-barium titanate system simply by introducing Co ions into the A-site. It is noted that all modified compositions exhibit well-saturated magnetic hysteresis loops at room temperature. Especially, 70Bi_0.95Co_0.05FeO₃-30Ba_0.95Co_0.05TiO₃ manifests noticeable ferroelectric and ferromagnetic properties; the spontaneous polarization and the saturation magnetization are 42 µC/cm² and 3.6 emu/g, respectively. We expect that our methodology will be widely used in the development of perovskite-structured multiferroic oxides.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.80-80
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• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.894-897
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• 2004

Sodum bismuth titanate $(Na_{0.5}Bi_{0.5}TiO_3$ or NBT) thin films coated on the $LaNiO_3$ (LNO) electrode by sol-gel methode and rapid thermal annealing (RTA) technique. The NBT (NBT/LNO/Si) thin films examined by x-ray diffraction (XRD). The orientation of NBT was observed for films coated at $900^{\circ}C$, 5 min and $600^{\circ}C$, 60 min. Filed emission scanning electron microscopy (FE-SEM) showed uniform surface composed of grains. The grain size of NBT thin films increased with increasing annealing temperature.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.162-166
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• 2016

0.75BF-0.25BT ceramics were prepared by sintering at $980-1040^{\circ}C$ in air or under atmosphere powder. A sample with 1 mole %-excess $Bi_2O_3$ was also prepared to compensate for $Bi_2O_3$-evaporation. Physical and piezoelectric properties of these three samples were compared. When the sintering temperature increased from $980^{\circ}C$ to $1040^{\circ}C$, the density of the sample sintered in air decreased continuously due to Bi-evaporation. Due to the suppression of Bi-evaporation, the sample sintered under atmosphere powder had a higher density at sintering temperatures above $1000^{\circ}C$ than did the sample sintered in air. The addition of 1 mole %-excess $Bi_2O_3$ successfully compensated for Bi-evaporation and kept the density at the higher value until $1020^{\circ}C$. Grain size increased continuously when the sintering temperature increased from 980 to $1040^{\circ}C$, irrespective of the sintering atmosphere. When the sintering temperature increased, the piezoelectric constant ($d_{33}$) and the electromechanical coupling factor ($k_p$) increased for all samples. The sample with 1 mole % excess-$Bi_2O_3$ showed the highest density and the best piezoelectric properties at sintering temperature of $1020^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.33.1-33.1
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• 2010

BiFeO3 (BFO)는 강자성과 유전체 특성을 모두 구현할 수 있는 재료로서 연구가 활발히 진행되고 있다. BFO 박막을 제조하는 방법에는 sputtering, chemical solution deposition, pulsed laser deposition methods 등이 알려져 있으나, 이러한 방법들은 근본적으로 고 진공을 사용하거나, 고온에서의 열처리, 낮은 성막 속도 등의 문제점이 있어, 상온에서 비교적 쉽게 박막을 제조할 수 있는 Aerosol deposition에 관한 관심이 증가하고 있다. 본 연구에서는 BFO의 강자성, 강유전 특성을 향상시키기 위해 Ba(Cu1/3Nb2/3)O3 (BCN)를 첨가한 Ba(Cu1/3Nb2/3)O3 (BFO-BCN) 복합재료를 합성하였다. 합성한 마이크론 크기의 입자를 사용하여 나노 결정립 크기의 Ba(Cu1/3Nb2/3)O3 (BFO-BCN) 박막을 상온에서 진공 분말 분사 공정(Aerosol-Deposition)을 이용하여 제조하고, 강자성 및 강유전성 특성을 평가하였다. Aerosol deposition방법으로 제조된 BFO-BCN박막은 BFO박막에 비해 우수한 강자성과 강유전 특성 나타내었다.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.655-658
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• 2004

Lithium ferrites are a low-cost material which have been prominent in the high frequency core industry because of their excellent temperature performance and high squareness ratio. In order to develope the lithium ferrites with the high squareness and low coercive force, the ferrites of $Li_{0.48}Bi_{0.02}Ni_{0.04}Fe_{2.46-x}O_4$ were investigated the by varying composition, temperature and frequency. Electric loss of the Li-ferrite was lowered with the substitution of $Mn_{2}O_3$. The addition of $Mn_{2}O_3$ increased the magnetic induction (Bm&Br) but decreased the coercive force (Hc) and the squareness ratio (R=Br/Bm). Also, the Br value was stable at environmental temperature variation.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.258-261
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• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1134-1136
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• 1993

The mean grain size of sample decreases with increasing the addition of $Al_2O_3$ in the basic composition of YIG. It is mean that the addition of $Al_2O_3$ is helpless the development of magnetic properties in YIG garnet, considering the relation of ${\mu}{\propto}D^{1/3}$. To increase addition of $Al_2O_3$ decreased the area of hysterisis loop. It is known that the addition of $Al_2O_3$ is help the development of magnetic properties in YIG garnet, considering the relation of loss component factor and the area of hysterisis loop. As a results, sample with the addition of $Al_2O_3$ 0.5 mol % among the fabricated samples is must effective in the magnetic properties of YIG Garnet.

• Economic and Environmental Geology
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• v.46 no.2
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• pp.199-206
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• 2013

The Daehyun gold-silver deposit consists of two hydrothermal quartz veins that fill NE-trending fractures in the Cambro-Ordovician calcitic marble. I have sampled wallrock, hydrothermaly-altered rock and gold-silver ore vein to study the element dispersion and element gain/loss during wallrock alteration. The hydrothermal alteration doesn't remarkably recognized at this deposit and consists of mainly calcite, dolomite, quartz and minor epidote. The ore minerals composed of arsenopyrite, pyrrhotite, pyrite, sphalerite, stannite, chalcopyrite, galena, electrum, native bismuth and silver-bearing mineral. Based on analyzed data, the chemical composition of wallrock consists of mainly $SiO_2$, CaO, $CO_2$ with amounts of $Al_2O_3$, $Fe_2O_3(T)$ and MgO. The contents of $SiO_2$, $Fe_2O_3(T)$, MgO, CaO and $CO_2$ vary significantly with distance from ore vein. The element dispersion doesn't remarkably recognized during wallrock alteration and only occurs near the ore vein margin because of physical and chemical properties of wallrock. Remarkable gain elements during wallrock alteration are $Fe_2O_3(T)$, total S, Ag, As, Bi, Cd, Cu, Ni, Pb, Sb, Sn, W and Zn. Remarkable loss elements are $SiO_2$, MnO, MgO, CaO. $CO_2$ and Sr. Therefore, Our result may be used when geochemical exploration carry out at deposits hosted calcitic marble in the Hwanggangri metallogenic district.