• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.119-125
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• 2017

We have studied the effects of Ag on the characteristics of $Sn_{43}Bi_{57}Ag_x$(wt%) lead-free solders for photovoltaic ribbon. Ag atoms in the solder formed an alloy phase of Ag3Sn after reacting with some part of Sn atoms, while they did not react with Bi atoms, but decreased the mean size of Bi solid phase and the thickness of solder. When Ag atoms of 3.0 wt% was added to eutectic $Sn_{43}Bi_{57}$(wt%) solder, it showed the optimally useful results that the peel strength of photovoltaic ribbon greatly increased and the sheet resistance of the solder decreased. In the meanwhile, the eutectic $Sn_{43}Bi_{57}$(wt%) solder showed a low melting temperature of $138.9^{\circ}C$, and showed a very similar result regardless of the added amount of Ag atoms.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.155-158
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• 2014

The phase transformation of Sn-Pb-Bi solder for photovoltaic ribbon during soldering was studied using real-time synchrotron x-ray scattering. At room temperature, Sn and Pb crystal phases in the solder existed separately. By heating to $92^{\circ}C$, a new PbBi alloy crystal phase was formed, which grew further up to $160^{\circ}C$. The Sn crystal phase first started to melt at $160^{\circ}C$, and was mostly melted at $165^{\circ}C$. In contrast, the Pb and PbBi crystal phases started to melt at $165^{\circ}C$, and were mostly melted at $170^{\circ}C$. The useful result was obtained, that the solder's melting temperature decreased from $183^{\circ}C$ to $170^{\circ}C$ by addition of a small amount of Bi atoms to the eutectic Sn62-Pb38 (wt%) solder. Our study first revealed the detailed in-situ phase transformation of Sn-Pb-Bi solder during heating to the eutectic temperature. Considering the results of peel strength and hardness, adding 1 wt% of Bi atoms to the Sn62-Pb38 (wt%) solder produced an appropriate composition.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.35-40
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• 2007

The pull strength and fracture mechanism were investigated to evaluate the reliability and compatibility of Sn-8Zn-3Bi joints, the solder paste on lead and lead-free plating under thermal shock conditions. At the Sn-8Zn-3Bi solder joint, no crack initiation was observed during thermal shock test. After 1000 cycles, the strength of the solder joint decreased not sharply but reduced gradually compared with initial conditions. The decrement of strength was affected by ${\gamma}-Cu_5Zn_8$ IMC growth which caused the IMC fracture on the fracture surface and a change in fracture mode and initial crack point. Clearly, the Sn-8Zn-3Bi solder shows good reliability properties and compatibility with lead-free plated Cu LF under thermal shock temperatures between 248K and 423K.

• Journal of Korea Foundry Society
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• v.21 no.4
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• pp.239-245
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• 2001

Microstructure and mechanical properties of Sn-3.1 wt.%Ag-6.9 wt.%Bi system solders on Cu-substrate were studied. The Sn3.1 wt.%Ag-6.9 wt.%Bi alloy was designed by phase diagram and chemical properties and was prepared by melting in argon atmosphere. The mechanical properties of solder/Cu joints were examined by shear strength test, and also creep test. The microstructure of Sn-3.1 wt.%Ag-6.9 wt.%Bi alloy consists of Bi-rich phase and $Ag_3Sn$ precipitate in {\beta}-Sn$ matrix phase. The shear strength of the joint was decreased with aging treatment. Crack path under shear test was through the solder. Similar crack path change mode was observed at the creep test of solder/Cu joint. The creep behavior of Sn-3.1 wt.%Ag-6.9 wt.%Bi alloy represented the inverse primary creep behavior at all test condition. It is suggested that the inverse primary creep behavior is induced from Bi solute atoms in Sn-matrix. The creep resistance of Sn-3.1Ag-6.9Bi alloy is better than that of Sn-3.5 wt.%Ag alloy at all test conditions.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.95-103
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• 2021

Sn-58Bi-xRu composite solders were prepared by adding Ru nanoparticles to Sn-58Bi, a typical low-temperature solder, and the interfacial reaction and solder joint reliability were analyzed by reacting with Cu/OSP and ENIG surface treated PCB boards. The Cu₆Sn₅ IMC formed by the reaction with Cu/OSP had little change in thickness depending on the Ru content, and ductile fracture occurred inside the solder during the high-speed shear test without any significant change even after 100 hr aging. In reaction with ENIG, the Ni₃Sn₄ IMC thickness tended to decrease as the Ru content increased, and ENIG-specific brittle fracture was found in some specimens. Since Ru element is not found near the interface, it is judged not to be significantly involved in the interfacial reaction, and it is analyzed that it mainly exists together with the Bi phase.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.47-52
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• 2005

Worldwide movement for prohibition of Pb usage drives imminent implementation of Pb-free solders in microelectronic packaging industry. Reliability information of Pb-free solders has not been completely constructed yet. One of the potential reliability concerns of Pb-free solders is allotropic transformation of Sn known as tin pest. Volume increase during the formation of tin pest could deteriorate the reliability of solder joints. It was also reported that the addition of soluble elements (i.e. Pb, Bi, and Sb) into Sn can effectively suppress the tin pest. However, the mechanical properties of the tin pest resistant alloys have not been studied in detail. In this study, lap shear creep test was conducted with Sn and Sn-0.7Cu based solder alloys doped with minor amount of Bi or Sb. Shear strain rates of the alloy were generally higher than those of Sn-3.5Ag based alloys. Rupture strains and corresponding Monkman- Grant products were largest for Sn-0.5Bi alloy and smallest for Sn-0.7Cu-0.5Sb alloy. Rupture surface Sn-0.5Bi alloy showed highly elongated $\beta$-Sn globules necked to rupture by shear stresses, while elongation of $\beta$-Sn globules of Sn-0.7Cu-0.5Sb alloy was relatively smaller.

• Proceedings of the KWS Conference
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• 2003.05a
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• pp.37-39
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• 2003

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.95-103
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• 2005

The interfacial reaction between 42Sn-58Bi solder (in wt.$\%$ unless specified otherwise) and electroless Ni-P/immersion Au has been investigated before and after thermal aging, with a focus on formation and growth of an intermetallic compound (IMC) layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 (bare Ni), 0.1, and $1{\mu}m$ was plated on the $5{\mu}m$ thick electroless Ni-P ($14{\~}15 at.\%$P) layer. Then, the 42Sn-58Bi solder balls were fabricated on three different UBM structures by screen-printing and pre-reflow. The $Ni_3Sn_4$ layer (IMC1) was formed at the joint interface after pre-reflow for all the three UBM structures. On aging at $125^{\circ}C$, a quaternary phase (IMC2) was observed above the $Ni_3Sn_4$ layer in the Au-containing UBM structures, which was identified as $Sn_{77}Ni{15}Bi_6Au_2$ (in at.$\%$). The thick $Sn_{77}Ni{15}Bi_6Au_2$ layer deteriorated the integrity of the solder joint and the shear strength of the solder bump was decreased by about $40\%$ compared with non-aged joints.

• Journal of Welding and Joining
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• v.16 no.3
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• pp.157-166
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• 1998

Recently as environmental pollution caused by Pb has posed a serious threat to the global environment, the trend to regulate the usage of Pb in electronic industry is one the rise. Currently, the solder alloy with high Pb content, Sn-37%Pb, is utilized in the electronic assembly therefore, the objective of this study is to develop an alternative solder alloy for the existing Sn-37%Pb solder alloy. First thing, this work choosed Sn-5%Pb-1.5%Ag, Sn-5%Pb-1.5%Ag-x%Bi(x=1~5%) for candidate solder alloys, and examined their properties such as melting range, wettability, microhardness, tensile property, oxidation behavior and microstructure. Wettability was on the same level of Sn-37%Pb. Dissolution of Pb ion in Sn-5%Pb solder was 0.46ppm. This solder alloy revealed cellular dendrite microstructure $\beta$-Sn matrix, Pb-rich phase, Ag/Sn, and Cu/Sn Intermetallic compounds. The range of solidification temperature was within 3$0^{\circ}C$. Also these alloy displayed higher tensile strength and lower elongation than Sn-37%Pb. The resistance of oxidation in Sn-5%Pb-1.5%Ag solder alloy was superior to that of Sn-37%Pb solder alloy. But that of Sn-5%Pb-1.5%Ag-5%Bi solder alloy was equal to that of Sn-37%Pb solder alloy.