• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.14-15
• /
• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• 한국전기전자재료학회논문지
• /
• 제26권11호
• /
• pp.806-809
• /
• 2013

In this study, $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3+0.10\;wt%Bi_2O_3+0.35\;wt%B_2O_3$ ceramics were prepared by conventional soild-state sintering process. The specimens were sintered at temperature range from $1,060^{\circ}C$ to $1,100^{\circ}C$. XRD (X-ray diffractron), SEM (scanning electron microscope) were used to analyze the crystal structure and microstructural sproperties of specimens. And also, $T_{O-T}$, TC were observed by the mesurement of temperature dependence of dielectric constant. Excellect physical properties of the piezoelectric constant $d_{33}$= 170 pC/N, electromechanical coupling factor kp= 0.312, Tc= $315^{\circ}C$ were obtained, respectively, from the specimen sintered at $1,080^{\circ}C$.

• 한국전기전자재료학회논문지
• /
• 제25권9호
• /
• pp.692-701
• /
• 2012

Recently, many lead-free piezoelectric materials have been investigated for the replacement of existing Pb-based piezoelectric ceramics because of globally increasing environmental interest. There has been remarkable improvement in piezoelectric properties of some lead-free ceramics such as $(Bi,Na)TiO_3-(Bi,K)TiO_3-BaTiO_3$, $(Na,K)NbO_3-LiSbO_3$, and so on. However, no one still has comparable piezoelectric properties to lead-based materials. Therefore, new lead-free piezoelectric ceramics are required. $BiFeO_3$ has a rhombohedrally distorted perovskite structure at room temperature and a very high Curie temperature ($T_C$= 1,100 K). And a very large electric polarization of 50 ~ 60 ${\mu}C/cm^2$ has been reported both in epitaxial thin film and single crystal $BiFeO_3$. Therefore, a high piezoelectric effect is expected also in a $BiFeO_3$ ceramics. The recent research activities on $BiFeO_3$ or $BiFeO_3$-based solid solutions are reviewed in this article.

• Nuclear Engineering and Technology
• /
• 제51권5호
• /
• pp.1373-1380
• /
• 2019

Besides promising implications as fertile nuclear materials, thorium carbonitrides are of great interest owing to their peculiar physical and chemical properties, such as high density, high melting point, good thermal conductivity. This paper reports first-principles simulation results on the structural, electronic and magnetic properties of cubic thorium carbonitrides $ThC_xN_{(1-x)}$ (X = 0.03125, 0.0625, 0.09375, 0.125, 0.15625) employing formalism of density-functional-theory. For the simulation of physical properties, we incorporated full-potential linearized augmented plane-wave (FPLAPW) method while the exchange-correlation potential terms in Kohn-Sham Equation (KSE) are treated within Generalized-Gradient-Approximation (GGA) in conjunction with Perdew-Bruke-Ernzerhof (PBE) correction. The structural parameters were calculated by fitting total energy into the Murnaghan's equation of state. The lattice constants, bulk moduli, total energy, electronic band structure and spin magnetic moments of the compounds show dependence on the C/N concentration ratio. The electronic and magnetic properties have revealed non-magnetic but metallic character of the compounds. The main contribution to density of states at the Fermi level stems from the comparable spectral intensity of Th (6d+5f) and (C+N) 2p states. In comparison with spin magnetic moments of ThSb and ThBi calculated earlier with LDA+U approach, we observed an enhancement in the spin magnetic moments after carbon-doping into ThN monopnictide.

• 한국세라믹학회지
• /
• 제40권10호
• /
• pp.961-966
• /
• 2003

BiN $b_{0.975}$S $b_{0.025}$ $O_4$저온 동시 소결 세라믹 후막 및 적층 세라믹(Multi-Layer Ceramic, MLC) 공정 기술을 이용한 소형 마이크로파 필터를 설계 및 제작하였다. MLC 칩 대역 통과 필터(BPF)는 소형화와 낮은 가격이라는 장점을 가지고 있다. 제안된 필터는 stripline 공진기와 결합 캐패시터로 구성되며, IMT-2000용 단말기의 수신단 통과 대역에 적합하며 통과 대역 아래쪽 저지 대역에 감쇠극이 형성되도록 설계하였다. 상용 마이크로파 회로 및 구조 설계 tool를 이용하여 제안된 MLC칩 대역 통과 필터의 공진기 전자기적 결합량 변화 및 결합 캐패시턴스에 따른 필터의 주파수 특성, 특히 감쇠극의 위치 변화에 대해 살펴보았다. 제작된 MLC 칩 BPF의 주파수 특성은 시뮬레이션 결과와 매우 일치하였다.