• 한국광물학회지
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• 제11권2호
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• pp.117-125
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• 1998

Crystallization behavior of platinum minerals within Pt-Sb-Bi bearing ore magmas and mineralogical properties of the existing minerals were investigated at 1,00$0^{\circ}C$ by synthetic experiment. High purity reagents were used as starting materials and silica tubings as containers. Reaction products were analysed by reflecting microscopy, X-ray diffraction, electron probe microanalysis, and micro-hardness test. Stable minerals at 1,00$0^{\circ}C$ are platinum, electron probe microanalysis, and micro-hardness test. Stable minerals at $1,000^{\circ}C$ are platinum, stump-flite (PtSb) and geversite (PtSb2). They are in equilibrium with liquid (ore magma). Platinum contains considerable amount of Sb of 7.5 at.%, whereas Bi only up to 0.9 at.%. Pure stumpflite is hexagonal with space group P63/mmc, and unit cell parameters are a=4.1318(6), c=5.483(1)$\AA$. VHN50=417(2)$\AA$. Geversite has cubic structure with space group Pa3. Cell parameters are a=6.4373(2)$\AA$ and Vicker hardness values VHN50=663.5 (566~766). Both stumpflite and geversite show solid solution and their end-members are Pt48.8Sb40.7-Bi10.5, and Pt33.7-Sb59.8Bi6.5, respectively. Although stumpflite (m.p. $1,043^{\circ}C$) and unnamed PtBi (m.p. 7$65^{\circ}C$) do not form a complete solid solution at $1,000^{\circ}C$, they are known, at $600^{\circ}C$, to form a continuous solid solution. Geversit (m.p. $1,226^{\circ}C$) also forms complete solid solution with insizwaite (m.p. $660^{\circ}C$). Unit cell dimensions of the minerals above increases with the amount of Bi substituting for Sb.

• 정보저장시스템학회논문집
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• 제1권1호
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• 한국세라믹학회지
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• 제29권11호
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• pp.855-862
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• 1992

Thermoelectric power, electrical conductivity and Hall effect were measured, as functions of temperature in the range of 100 to 600 K, on polycrystalline Bi4/3Sb2/3Te3 which had been prepared via uniaxial hot-pressing at different temperatures in the range of 373 K to 773 K, aiming at searching a profitable processing route to a polycrystalline thermoelectric material, a promising, viable alternative to a single crystalline one. It was found that, with increasing temperature of pressing under a fixed pressure, the material, normally a p-type prior to being hot-pressed, underwent a transition to n-type. This transition was confirmed to be due to plastic deformation during hot-pressing and interpreted as being attributed to the change of the major ionic defect BiTe' into TeBi˙at temperature high enough for structure elements mobility. Thermoelectric figure-of-merit of the hot-pressed material was discussed in connection with the p-n transition in addition to microstructure.

• Bulletin of the Korean Chemical Society
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• 제18권1호
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• pp.91-97
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• 1997

In the course of magnetic study on several perovskite-type oxides, A2Fe(Ⅲ)BO6 (A = Ca, Sr, Ba and B = Sb, Bi), we have observed a strong irreversibility in their dc-magnetizations. When the structural data and the Mossbauer spectra are considered, such an irreversibility is to be associated with some competitions between the nearest-neighbors (nn) and the next-nearest-neighbors (nnn) in their magnetic sublattices. Particularly, the Mossbauer spectra indicate that Sr2FeBiO6 of cubic perovskite-structure is apparently well ordered crystalline compound. Nontheless this antiferromagnet shows a magnetic property which resembles that of a spin-glass. The strong history dependence is observed below 91 K and the irreversible magnetic behavior is also observed from the measurement of hysteresis loops at 10 K after zero-field-cooled (zfc) and field-cooled (fc) processes. Considering the nn and the nnn superexchanges of almost same order in ordered perovskite, it is proposed that there exists a competition and cancellation of antiferromagnetic and ferromagnetic superexchange between the nearest-neighbors and the next-nearest-neighbors, thus introducing a certain degree of frustration.

• 한국주조공학회지
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• 제25권1호
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• pp.40-50
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• 2005

A series of heavy section ductile cast iron ingots with the cube length of 250mm were systematically investigated as functions of casting parameters of sand casting. Abnormal graphite formation was specially observed with the variation of Si content and Bi or Sb addition. Effects of chilling during casting and adaptation of riserless system were also examined, and proved to be effective for the prevention of both shrinkage and abnormal graphite such as chunky one. The formation of chunky graphite was effectively prevented by low Si content despite the promotion of pearlite matrix structure. The ferritic matrix was encouraged to form by high Si content and chunky graphite formation was effectively suppressed by the addition of Bi and Sb. Bi addition, however, was not good enough to control the microstructure owing to the sensitive cooling rate dependent inoculation behavior and relative low ability of nodulization. Sb addition, on the other hand, was proved to be effective for the microstructural control and enhancement of various mechanical properties such as strength, elongation, and impact energy. It may be suggested that optimized casting parameters should be applied to produce heavy section ductile cast iron with reliability.

• 폴리머
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• 제39권2호
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• pp.225-234
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• 2015

In this study, we proposed to synthesize thermally stable, soluble and conjugated Schiff base polymer (SbP). For this reason, a specific molecule namely 4,4'-thiodiphenol which has sulfur and oxygen bridge in its structure was used to synthesize bi-functional monomers. Bi-functional amino and carbonyl monomers namely 4,4'-[thio-bis(4,1-phenyleneoxy)] dianiline (DIA) and 4,4'-[thiobis(4,1-phenyleneoxy)]dibenzaldehyde (DIB) were prepared from the elimination reaction of 4,4'-thiodiphenol with 4-iodonitrobenzene and 4-iodobenzaldehyde, respectively. The structures of products were confirmed by elemental analysis, FTIR, $^1H$ NMR and $^{13}C$ NMR techniques. The molecular weight distribution parameters of SbP were determined by size exclusion chromatography (SEC). The synthesized SbP was characterized by solubility tests, TG-DTA and DSC. Also, conductivity values of SbP and SbP-iodine complex were determined from their solid conductivity measurements. The conductivity measurements of doped and undoped SbP were carried out by Keithley 2400 electrometer at room temperature and atmospheric pressure, which were calculated via four-point probe technique. When iodine was used as a doping agent, the conductivity of SbP was observed to be increased. Optical band gap ($E_g$) of SbP was also calculated by using UV-Vis spectroscopy. It should be stressed that SbP was a semiconductor which had a potential in electronic and optoelectronic applications, with fairly low band gap. SbP was found to be thermally stable up to $300^{\circ}C$. The char of SbP was observed 29.86% at $1000^{\circ}C$.

• 한국세라믹학회지
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• 제49권1호
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• pp.43-47
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• 2012

Electromigration in molten $Ge_2Sb_2Te_5$ (GST) was characterized using pulsed DC stress to an isolated line structure. When an electrical pulse was applied to the GST, GST lines were melted by Joule heating, and Ge and Sb atoms migrate to the cathode, whereas Te atoms migrate to the anode. This elemental separation in the molten GST was caused by an electrostatic force-induced electromigration. The effects of O-, N-, and Bi-doping on the electromigration were also investigated, and atomic mobility changes by the doping were investigated by quantifying $DZ^*$ values. The Bi -doping did not affect the $DZ^*$ values of the constituent atoms in the molten GST, but the D$DZ^*$ values decreased by O-doping and N-doping.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.555-560
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• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• 한국재료학회지
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• 제21권4호
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• pp.192-195
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• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• 한국전기전자재료학회논문지
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• 제28권4호
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• pp.229-233
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• 2015

In this paper, in order to develop outstanding Pb-free piezoelectric composition ceramics, the $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3+0.3wt%Bi_2O_3+0.4wt%Fe_2O_3+xwt%CuO$ (x= 0~0.8 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effects of CuO-doping on the structure and electrical properties of the NKL-NST ceramics were systematically studied. The results show that the ceramics exhibit a pure perovskite structure with orthorhombic phase at room temperature, and secondary phase was found in the ceramics. The 0.4 wt%CuO added ceramics sintered at $950^{\circ}C$ showed the optimum properties of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient(kp) and mechanical quality factor(Qm) : $d_{33}=213$[pC/N], kp= 0.43, Qm= 423,respectively.