• 제목/요약/키워드: Bi-Sb structure

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Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure

  • Yousif, Afnan K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권3호
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    • pp.239-243
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    • 2008
  • In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

방전플라즈마 소결된 Bi0.5Sb1.5Te3의 열/전기적 특성 (The Electric and Thermal Properties of Spark Plasma Sintered Bi0.5Sb1.5Te3)

  • 이길근;최영훈;하국현
    • 한국분말재료학회지
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    • 제19권4호
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    • pp.285-290
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    • 2012
  • The present study was focused on the analysis of the electric and thermal properties of spark plasma sintered $Bi_{0.5}Sb_{1.5}Te_3$ thermoelectric material. The crystal structure, microstructure, electric and thermal properties of the sintered body were evaluated by measuring XRD, SEM, electric resistivity, Hall effect and thermal conductivity. The $Bi_{0.5}Sb_{1.5}Te_3$ sintered body showed anisotropic crystal structure. The c-axis of the $Bi_{0.5}Sb_{1.5}Te_3$ crystal aligned in a parallel direction with applied pressure during spark plasma sintering. The degree of the crystal alignment increased with increasing sintering temperature and sintering time. The electric resistivity and thermal conductivity of the $Bi_{0.5}Sb_{1.5}Te_3$ sintered body showed anisotropic characteristics result from crystal alignment.

Photoferroelectric 반도체의 광학적 특성 연구 IV. (SbSI:V, SbSeI:V, BiSI:V, BiSeI:V, SbSI:Cr, SbSeI:Cr, BiSI:Cr, BiSeI:Cr, SbSI:Ni, SbSeI:Ni, BiSI:Ni 및 BiSeI:Ni 단결정의 광학적 특성에 관한 연구) (Optical Properties of Photoferroelectic Semiconductors IV.(Optical Properties of SbSI:V, SbSeI:V, BiSI:V, BiSeI:V, SbSI:Cr, SbSeI:Cr, BiSI:Cr, BiSeI:Cr, SbSI:Ni, SbSeI:Ni, BiSI:Ni and BiSeI:Ni Single Crystals))

  • 오석균;현승철;윤상현;김화택;김형곤;최성휴;윤창선;권숙일
    • 한국진공학회지
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    • 제2권2호
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    • pp.236-245
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    • 1993
  • SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, 및 BiSeI : Ni 단결정을 고순도(99.9999%)의 성분원소에 혼합물을 투명석 영관내에 넣고, $1{\times}10^{-6}mmHg$의 진공에서 봉입하여 합성한 ingot를 사용하여, 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정의 구조는 orthorhombic 구조이며, 광학적 energy band gap 구조는 간접전이형 이었고, energy gap의 온도의존성은 상전이에 관계되는 2개의 변곡점이 나타났으며, 연속된 영역에서는 Varshni 방정식을 만족하였다. 첨가한 3d 불순문(V, Cr, Ni)은 모결정의 $T_d$ 대칭을 갖는 주격자점에 +2가 ion으로 위치하며, 이들 ion의 energy 준위간의 전자전이에 의하여 불순물 광흡수 peak가 나타난다.

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플라즈마 아크 방전법에 의한 Bi-Sb-Te 나노 열전분말 제조 (Synthesis of Bi-Sb-Te Thermoelectric Nanopowder by the Plasma Arc Discharge Process)

  • 이길근;이동열;하국현
    • 한국분말재료학회지
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    • 제15권5호
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    • pp.352-358
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    • 2008
  • The present study focused on the synthesis of a bismuth-antimony-tellurium-based thermoelectric nanopowders using plasma arc discharge process. The chemical composition, phase structure, particle size of the synthesized powders under various synthesis conditions were analyzed using XRF, XRD and SEM. The powders as synthesized were sintered by the plasma activated sintering. The thermoelectric properties of sintered body were analyzed by measuring Seebeck coefficient, specific electric resistivity and thermal conductivity. The chemical composition of the synthesized Bi-Sb-Te-based powders approached that of the raw material with an increasing DC current of the are plasma. The synthesized Bi-Sb-Te-based powder consist of a mixed phase structure of the $Bi_{0.5}Sb_{1.5}Te_{3}$, $Bi_{2}Te_{3}$ and $Sb_{2}Te_{3}$ phases. This powder has homogeneous mixing state of two different particles in an average particle size; about 100nm and about 500nm. The figure of merit of the sintered body of the synthesized 18.75 wt.%Bi-24.68 wt.%Sb-56.57 wt.%Te nanopowder showed higher value than one of the sintered body of the mechanically milled 12.64 wt.%Bi-29.47 wt.%Sb-57.89 wt.%Te powder.

Co를 첨가한 $ZnO-Bi_2O_3-Sb_2O_3$ 바리스터의 소결 및 전기적 특성 (Sintering and the Electrical Properties of Co-doped $ZnO-Bi_2O_3-Sb_2O_3$ Varistor System)

  • 김철홍;김진호
    • 한국세라믹학회지
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    • 제37권2호
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    • pp.186-193
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    • 2000
  • Effects of 1.0 mol% CoO addition on sintering and the electrical properties of ZnO-Bi2O3-Sb2O3(ZBS) varistor system with 3.0 mol% co-addition of Sb2O3 and Bi2O3 at various Sb/Bi ratio (0.5, 1.0, and 2.0) were investigated. Cobalt had little influence on the liquid-phase formation and the pyrochlore decomposition temepratures of ZBS, while densification was mainly dependent on Sb/Bi ratio: when Sb/Bi=0.5, excess Bi2O3 irrelevant to the formation of pyrochore(Zn2Sb3Bi3O14) forms eutectic liquid at ~75$0^{\circ}C$ which promotes densification and grain growth; with Sb/Bi=2.0, the second phase Zn7Sb2O12 formed by excess Sb2O3 irrelevant to the formation of the pyrochlore retards densification up to ~100$0^{\circ}C$. These phases caused the coarsening and uneven distribution of the second phase particles on the grain boundaries of ZnO above the pyrochlore decomposition temperature(~105$0^{\circ}C$), which led to broad size dist-ribution of ZnO; the specimen with Sb/Bi=1.0 showed homogeneous microstructure compared with the others, which enabled improved varistor characteristics. Doping of Co increased the nonlinearity and the potential barrier height of ZBS, which is thought to stem from improved sintering behavior such as homogenized microstructure due to size reduction and even distribution of the second phase and suppressed volatility of Bi2O3, as well as the improvement in the potential barrier structure via increased donor and interface electron trap densities.

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Sb 치환에 따른 $BiNbO_4$ 세라믹스의 고주파 유전특성의 변화 (Microwave Dielectric Properties of Sb substituted $BiNbO_4$ Ceramics)

  • 임혁;오영제;최세영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.646-649
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    • 2002
  • The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.

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둔전금광산(屯田金鑛山) 남광상(南鑛床)에서 산출(産出)되는 Sb, Bi 유염광물(硫鹽鑛物)의 산출상태(産出狀態)와 생성환경(生成環境) (Mode of Occurrences and Depositional Conditions of Sb, Bi Sulfosalt Minerals from South Ore Deposits, Dunjeon Gold Mine)

  • 박희인;이찬희
    • 자원환경지질
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    • 제25권1호
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    • pp.17-25
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    • 1992
  • South ore deposits of the Dunjeon gold mine is a fissure-filling vein emplaced in the Cretaceous granodiorite, skarnized and/or hornfelsified Ordovician Dumudong Formation. Mineralization can be divided into three distinct depositional stages on the basis of vein structure and mineral assemblages. Sb, Bi sulfosalts minerals, such as tetrahedrite, bournonite, boulangerite, cosalite, lillianite, heyrovskyite, unknown Pb-Bi-Sb-S mineral, native Sb, native Bi and Au-Ag minerals are mainly deposited in stage II. The formation temperature and sulfur fugacties of Sb, Bi minerals in the stage II deduced from thermodynamic considerations are from $172^{\circ}$ to $378^{\circ}C$ and $10^{-10.6}$ to $10^{-19.4}$ atm. Those temperatures are good agreement with temperature data obtained by fluid inclusion study which has reported already.

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Photoferroelectric 반도체의 광학적 특성 연구 III.($SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, 및 $Sb_{1-x}Bi_xSeI:Co$ 단결정의 광학적 특성에 관한 연구) (Optical Properties of Photoferroelectric Semiconductors III.(Optical Properties of $SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co\;and\;Sb_{1-x}Bi_xSeI:Co$ Single Crystals))

  • 현승철;오석균;윤상현;김화택;김형곤;최성휴;김창대;윤창선;권숙일
    • 한국진공학회지
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    • 제2권2호
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    • pp.227-235
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    • 1993
  • $SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.

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산화물 환원공정에 의한 Bi-Sb-Te계 열전분말 합성 (Synthesis of Bi-Sb-Te-based Thermoelectric Powder by an Oxide-reduction Process)

  • 이길근;김성현;하국현;김경태
    • 한국분말재료학회지
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    • 제17권4호
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    • pp.336-341
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    • 2010
  • The present study focused on the synthesis of Bi-Sb-Te-based thermoelectric powder by an oxidereduction process. The phase structure, particle size of the synthesized powders were analyzed using XRD and SEM. The synthesized powder was sintered by the spark plasma sintering method. The thermoelectric property of the sintered body was evaluated by measuring the Seebeck coefficient and specific electric resistivity. The $Bi_{0.5}Sb_{1.5}Te_3$ powder had been synthesized by a combination of mechanical milling, calcination and reduction processes using mixture of $Bi_2O_3$, $Sb_2O_3$ and $TeO_2$ powders. The sintered body of the $Bi_{0.5}Sb_{1.5}Te_3$ powder synthesized by an oxide-reduction process showed p-type thermoelectric characteristics, even though it had lower thermoelectric properties than the sintered body of the $Bi_{0.5}Sb_{1.5}Te_3$ thermoelectric powder synthesized by the conventional melting-crushing method.

Electric Property of $Bi_{0.4}Ti_3Sb_{1.6}$ Thermoelectric Material Prepared by Powder Metallurgy Process

  • Shin, Sung-Chul;Lee, Gil-Geun;Kim, Woo-Yeol;Ha, Gook-Hyun
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.684-685
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    • 2006
  • In the present study, the powder metallurgical fabrication of $Bi_{0.4}Te_3Sb_{1.6}$ thermoelectric materials has been studied with specific interest to control the microstructure by the mechanical grinding process. The $Bi_{0.4}Te_3Sb_{1.6}$ thermoelectric powders with a various particle size distribution were prepared by the combination of the mechanical milling and blending processes. The specific electric resistivity of the $Bi_{0.4}Te_3Sb_{1.6}$ sintered bodies mainly depended on the orientation of the crystal structure rather than the particle size of the raw powders.

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