• IEIE Transactions on Smart Processing and Computing
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• v.3 no.5
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• pp.285-297
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• 2014

This paper presents the results of an investigation into bi-directional communication in spectrum sharing-based cognitive radio (Bi-CR) systems. A Bi-CR system can increase the spectral efficiency significantly by sharing the spectrum and through the bi-directional use of spatial resources for two-way communication. On the other hand, the primary user experiences more interference from the secondary users in a Bi-CR system. Satisfying the interference constraint by simply reducing the transmission power results in performance degradation for secondary users. In addition, secondary users also experience self-interference from echo channels due to full duplexing. These imperfections may weaken the potential benefits of the Bi-CR system. Therefore, a new way to overcome these defects in the Bi-CR system is needed. To address this need, this paper proposes some novel power allocation schemes for the Bi-CR system. This contribution is based on two major analytic environments, i.e., noise-limited and interference-limited environments, for providing useful analysis. This paper first proposes an optimal power allocation (OPA) scheme in a noise-limited environment and then analyzes the achievable sum rates. This OPA scheme has an effect in the noise-limited environment. In addition, a power allocation scheme for the Bi-CR system in an interference-limited environment was also investigated. The numerical results showed that the proposed schemes can achieve the full duplexing gain available from the bi-directional use of spatial resources.

• Journal of Power Electronics
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• v.18 no.4
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• pp.1190-1200
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• 2018

A current sourced bi-directional wireless power transfer (WPT) system is proposed to solve the problems that exist in the bi-directional WPT for vehicle-to-grid (V2G) systems. These problems include the fact that these systems are not safe enough, the output power is limited and the control methods are complicated. Firstly, the proposed system adopts two different compensation and control methods on both the primary and secondary sides. Secondly, based on an AC impedance analysis, the working principle is analyzed and the parameter configuration method with frequency stability is given. In order to output a constant voltage, a bi-directional DC/DC circuit and a controllable rectifier bridge are adopted, which are based on the "constant primary current, constant secondary voltage" control strategy. Finally, the effectiveness and feasibility of the proposed methods are verified by experimental results.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.89-94
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• 2010

Bi-Te films were processed by coevaporation of Bi and Te dual sources with variations of the mole ratio of the Bi and Te evaporation sources, and thermoelectric properties of the coevaporated Bi-Te films were characterized. The coevaporated Bi-Te films were n-type semiconductors and exhibited Seebeck coefficients of $-60{\sim}-80{\mu}V/K$. The Terich Bi-Te film, processed with Bi and Te dual sources of 30 mol% Bi : 70 mol% Te ratio, exhibited a power factor of $5{\times}10^{-4}W/m-K^2$. On the other hand, a power factor of $17.7{\times}10^{-4}W/m-K^2$ was obtained for the Bi-rich film coevaporated using Bi and Te dual sources of 90 mol% Bi : 10 mol% Te ratio.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.388-391
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• 1999

Well oriented Bi2212 superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape method in which Cu-free BSCO powder mixture was' printed on copper plate and heat-treated. And we examined the effect of heat-treatment atmosphere for the superconducting properties and microstructure of Bi2212. The composition of Cu-free BSCO powder mixture was Bi$_2O_3$ : SrCO$_3$ : CaCO$_3$ = 1.2~2 : 1 : 1 and the heat-treatment for the superconducting formation reaction was performed in air, oxygen, nitrogen and low oxygen pressure. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Among the nonsuperconducting phases, it is known that the (Sr,Ca)CuO$_3$ phase restrain the formation of the Bi2212 superconducting phase. Because a kind of the nonsuperconducting phases is controled by the oxygen partial pressure, the optimum condition in which the remnants of the second phases don't leave in the fully processed conductor was determined by XRD and the critical tempera to re (Tc) analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.64-67
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• 2002

The Physical and magnetic properties such as microstructure, permeability and power loss of Ni-Zn ferrite with composition of $Ni_{0.8}Zn_{0.2}Fe_2O_4$, were investigated as the function of $Bi_2O_3$ and CaO contents. The power loss increased in proportion to the amount of $Bi_2O_3$ up to 0.3 wt% but it decreased over than 0.3 wt% addition. The highest permeability of 134 was obtained to the specimen added 1.0 wt% $Bi_2O_3$ since $Bi_2O_3$ contents were strongly dominant to grain growth and size than that of CaO. $Bi_2O_3$ liquid phase created during sintering process promoted sintering and grain growth so that grain size and permeability increased compared to that of the specimens which were sintered with free-additive and CaO. Also, lots of pores existed in the specimen which was added $Bi_2O_3$ wt% with the biggest grain size.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.248-255
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• 2009

A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.11
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• pp.1-10
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• 1993

This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.1-8
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• 2008

Effects of annealing process in a reduction ambient on thermoelectric properties of the $(Bi,Sb)_{2}Te_3$ thin films prepared by thermal evaporation have been investigated. With annealing at $300^{\circ}C$ for 2 hrs in a reduction ambient(50% $H_2$+50% Ar), the crystallinity of the $(Bi,Sb)_{2}Te_3$ thin films were substantially improved with remarkable increase in the grain size. Seebeck coefficients of the $(Bi,Sb)_{2}Te_3$ thin films increased from$\sim90{\mu}V/K$ to $\sim180{\mu}V/K$ with annealing in the reduction ambient due to decrease in the hole concentration. Power factors of the $(Bi,Sb)_{2}Te_3$ thin films were remarkably improved for $5\sim16$ times with annealing in the reduction atmosphere. After annealing in the reduction ambient, a $(Bi,Sb)_{2}Te_3$ evaporated film exhibited a maximum power factor of $18.6\times10^{-4}W/K^{2}-m$.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.49-54
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• 2010

The n-type $Bi_2(Te,Se)_3$ powders were fabricated by melting/grinding method and were hot-pressed in order to compare thermoelectric properties of the hot-pressed specimens with those of the $Bi_2(Te,Se)_3$ ingot. Effects of mechanical milling treatment of the $Bi_2(Te,Se)_3$ powders on thermoelectric characteristics of a hot-pressed specimen were also examined. The hot-pressed $Bi_2(Te,Se)_3$ exhibited power factors of $27.3{\sim}32.3{\times}10^{-4}W/m-K^2$ which were superior to $24.2{\times}10^{-4}W/m-K^2$ of the ingot. The $Bi_2(Te,Se)_3$, hot-pressed after mechanical milling treatment of the powders, possessed a non-dimensional figure-of-merit of 1.02 at $100^{\circ}C$ and exhibited extrinsic-intrinsic transition at $130^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.251-256
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• 2001

Bi-2223 tapes have been developed for low-field power applications at liquid nitrogen temperature. When the Bi-2223 tapes are used in an application such as a power transmission cable or a power transformer, they are supplied with an AC transport current simultaneously. AC loss taking into account such real applications is a crucial issue for power applications fo the Bi-2223 tapes to be feasible. In this paper, the transport losses for different AC current levels and arrangements of the neighboring tapes have been measured in a 1./5 m long Bi-2223 tape. The significant increase of the transport losses due to neighboring tape's AC currents is observed. An increase of the transport losses caused by a decrease of the Bi-2223 tape's critical current is a minor effect. The measured trasprot losses could not be explained by a dynamic resistance loss based on DC voltage-current characteristics in combination with the neighboring tape's AC currents.The trasport losses do not depend on the frequency of the neighboring tape's AC currents but is arrangements in the range of small current especially.