• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.203-209
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• 1998

Crystallographic and magnetic properties of single phase garnet $Y_{3-x}Bi_xFe_5O_{12}$ (x=0.0, 0.25, 0.5, 0.75, 1.0) were studied by using x-ray diffraction, Mossbauer spectroscopy and vibrating sample magnetometer (VSM). Ultra-fine polycrystalline cubic samples have been prepared by sol-gel method. The lattice constant increase linearly with increasing an amount of Bi. Annealing temperature was larger than 800 $^{\circ}C$ for the growth of a single-phase garnet powder. The second phase of garnet, $(BiFeO_3)$, was at 1000 $^{\circ}C$ for x=0.75, and 950 $^{\circ}C$ for x=1.00. From Mossbauer spectroscopy and VSM measurements, the magnetization and the coercivity were decreased and the Curie temperature $Y_{3-x}Bi_xFe_5O_{12}$(x=0.0, 0.25, 0.5, 0.75, 1.0) was slightly increased as increasing the Bi content.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.47-52
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• 2003

A new type of Bi based glass frit was developed for Ag paste in PDP applications and its properties are compared with the commercially used Pb based glass frit. After optimization of the properties of Bi based frits for PDP application such as the softening temperature and the coefficient of thermal expansion (C.T.E), the screen printed electrodes prepared with the Bi based fit contained Ag paste were characterized. In $Bi_2O_3-B_2O_3-Al_2O_3$ glass system with the more than 50% of $Bi_2O_3$, the softening temperature, the thermal expansion coefficient and the line resistivity was 400∼$480^{\circ}C$, 7.31∼$10.02\times 10^{-6}/^{\circ}C$> and 4.1∼4.8$\Omega$ respectively. Properties of the Bi based frits are comparable with the Pb based frits. A printability and an uniformity of the Bi based frits were excellent in screen printed Ag eletrode. The Bi based frit system is an excellent candidate material for Pb free and Alkali free frit in PDP applications.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1369-1373
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• 1999

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.300-304
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• 1999

To tap the feasibility of exploiting the 2$^{nd}$ phases as flux-pinning centers in the (Bi,Pb)$_2Sr_2Ca_2CuO_{10}$ superconductor, the size and the distribution of the precipitates have been controlled by changing reaction temperature and time, oxygen partial pressure Po$_2$ and annealing condition. Various annealing heat treatments were also conducted on the as-received 61 filament Bi-2223 tapes with Bi$_{1.8}Pb_{0.4}Sr_2Ca_{2.2}Cu_3O_8$ starting composition and annealed specimen were analyzed with XRD, SEM, EDS and TEM.. The grain size of (Ca,Sr)$_2$(BiPb)O$_4$ or Bi$_{0.5}Pb_3Sr_2Ca_2CuO_{\delta}$ was controllable by optimizing the heat treatment condition and critical current density (J$_c$) showed dependence on the size of the 2$^{nd}$ phases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.738-748
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• 2008

In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.303-308
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• 2015

Pd-functionalized ${\beta}-Bi_2O_3$ nanowires are synthesized by thermal evaporation of Bi powder using VLS mechanism followed by Pd coating and annealing. In this study, sensing properties of Pd-functionalized ${\beta}-Bi_2O_3$ nanowires sensor to selected concentrations of $NO_2$ gas were examined. Scanning electron microscopy showed that the nanowires with diameters in a range of 100 - 200 nm and lengths of up to a few tens of micrometers. Transmission electron microscopy and X-ray diffraction confirmed that the products corresponded to the nanowires of ${\beta}-Bi_2O_3$ crystals and Pd nanoparticles. Pd-functionalized ${\beta}-Bi_2O_3$ nanowires sensor showed an enhanced sensing performance to $NO_2$ gas compared to as-synthesized ${\beta}-Bi_2O_3$ nanowires sensor. As synthesized and Pd-functionalized ${\beta}-Bi_2O_3$ nanowire sensors showed responses of 178% - 338% and 196% - 535% at $300^{\circ}C$, respectively, to 0.05 - 2 ppm $NO_2$. In addition, the underlying mechanism of the enhancement of the sensing properties of ${\beta}-Bi_2O_3$ nanowires by Pd-functionalization is discussed.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.183-188
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• 1999

The crystallization behavior and electrical conductivity of the $CuO-Bi_2O_3-V_2O_5$ glasses with various CuO content were investigated. The glass formation regin was 0~20 mol% Bi2O3, 5~55 mol% CuO, and 30~90 mol% $V_2O_5$ with Tg=$275^{\circ}C$~$290^{\circ}C$. Among glasses with various compositions, the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass heat-treated at $358^{\circ}C$ for 8 h showed the highest conductivity of ~ at room temperature. The heat-treated glasses increased in electrical conductivity by the order of 104 compared to non heat-treated glass. The linear relationship between 1n($\sigma$T)and $T^{-1}$ indicated that electrical conduction in the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass occurred by a small polaron hopping.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.129-129
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• 2002

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.689-695
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• 2012

We have examined the co-doping effects of 1/2 mol% NiO and 1/4 mol% $Cr_2O_3$ (Ni:Cr = 1:1) on the reaction, microstructure, and electrical properties, such as the bulk defects and the grain boundary properties, of ZnO-$Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi = 0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Ni,Cr-doped ZBS, ZBS(NiCr) varistors were controlled using the Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$), ${\alpha}$-spinel ($Zn_7Sb_2O_{12}$), and ${\delta}-Bi_2O_3$ were detected for all of compositions. For the sample with Sb/Bi = 1.0, the Pyrochlore was decomposed and promoted densification at lower temperature by Ni rather than by Cr. A homogeneous microstructure was obtained for all of the samples affected by ${\alpha}$-spinel. The varistor characteristics were not dramatically improved (non-linear coefficient, ${\alpha}$ = 5~24), and seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.17 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy, the grain boundaries were found to have been divided into two types, i.e., one is tentatively assigned to ZnO/$Bi_2O_3$ (Ni,Cr)/ZnO (0.98 eV) and the other is assigned to a ZnO/ZnO (~1.5 eV) homojunction.