• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1040-1048
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• 1998

Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400$\AA$. As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100$\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150$\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400$\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100$\AA$)/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.139-145
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• 1989

An eutectic melt in the system(Bi2O3)0.85·(Nb2O5)0.15-6Bi2O3·SiO2 was unidirectionally solidfield at a rate of 0.5mm/h under a thermal gradient of 100℃/cm. Double crucibles and seed crystal plate were used in order to botain the composite crystals which had uniform microstructure throughout the ingot. The obtained composite crystals showed uniform microstructure, in which needle-like δ-(Bi2O3)0.85·(Nb2O5)0.15 crystals were arrayed in parallel in a matrix of γ-6Bi2O3·SiO2 single crystal. It was found that the <110> direction of δ-(Bi2O3)0.85·(Nb2O5)0.15 crystal was essentially parallel to the <111> direction of γ-6Bi2O3·SiO2 crystal in the composite crystals. A transverse thin plate of the composite crystals showed a high resolution optical transmission like an optical fiber array, and sharp chatoyancy was observed in the cabochon shaped composite crystals. Then, this may be useful for applications such as screen of a cathode ray tube or artificial cat's eye gem stones.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.589-593
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• 2002

The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.1
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• pp.89-94
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• 2007

High duality BiSrCaCuO thin films fabricated by using the i-beam sputtering method at various substrate temperatures, $T_{sub}$ and oxidation gas pressures, $pO_3$. The correlation diagrams of the BiSrCaCuO phases with Tsub and $pO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on $T_{sub}$ and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.167-167
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• 2003

Bi가 첨가된 강유전체 YMnO$_3$ (YBM)와 YMnO$_3$을 펄스 레이저 증착법을 이용하여 MgO(111)기판 위에 증착하였다. 증착시 기판온도와 산소분압에 따른 YBM 박막과 YMnO3 박막의 결정성장거동에 대하여 연구하였고, Bi의 첨가량에 따른 YBM 박막의 저온결정성화 효과에 대하여 관찰하였다. YMnO$_3$는 830 $^{\circ}C$이상에서 산소분압이 감소함에 따라서 c축 우선성장 거동을 보였다. 그에 비해 YBM은 700 $^{\circ}C$이상에서 산소분압이 증가함에 따라 c축 우선성장 하는 것을 관찰하였다. 이것은 Bi 첨가효과로 인해 저온결정화와 높은 산소분압에서 c축 우선성장을 하는 것으로 생각된다. Atomic Force Microscopy (AFM)분석과 Secondary Electron Microscopy(SEM)을 통하여 Bi의 첨가량이 증가함에 따라서 표면거칠가 감소하고 grain size가 증가함을 알 수 있었다. Bi의 거동을 살펴 보기 위해 Rutherford Backscattering spectroscopy (RBS)분석을 해보았다. 이 분석을 통해 Bi를 첨가한 YMnO$_3$는 Bi가 표면에 산화물형태로 존재함을 알 수 있었다.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.184-189
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• 2002

This study, compared with data of PbO-base glass system is a part of new glass composition design with Bi-base composition for PDP Rib. As $Bi_2O_3-B_2O_3-ZnO$ glass composition including Bi, which have similar density value and work facility to PbO, properties of softening point, thermal expansion coefficient, chemical durability, dielectric constant, and structural changing by XPS were investigated. $Bi_2O_3-B_2O_3-ZnO$ glass system, added 50∼80 wt% $Bi_2O_3$ widely, were presented 400∼480$^{\circ}C$ softening temperature, $68{\sim}72{\times}10^{-7}/^{\circ}C$ thermal expansion coefficient and 13∼25 dielectric constant. These results were showed similar physical properties with Pb-base glass system of same composition content, application possibility as starting composition of rib material was identified through micro-control of components and physical properties. The bonding energy of $O_{1s}$ as the $Bi_2O_3$ content decreasing was increased and full width at half-maximum (FWHM) was decreased, which is caused by non-bridging oxygen increasing.

• Journal of Powder Materials
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• v.29 no.1
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• pp.41-46
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• 2022

In this study, we report the microstructure and characteristics of Ag-SnO₂-Bi₂O₃ contact materials using a controlled milling process with a subsequent compaction process. Using magnetic pulsed compaction (MPC), the milled Ag-SnO₂-Bi₂O₃ powders have been consolidated into bulk samples. The effects of the compaction conditions on the microstructure and characteristics have been investigated in detail. The nanoscale SnO₂ phase and microscale Bi2O3 phase are well-distributed homogeneously in the Ag matrix after the consolidation process. The successful consolidation of Ag-SnO₂-Bi₂O₃ contact materials was achieved by an MPC process with subsequent atmospheric sintering, after which the hardness and electrical conductivity of the Ag-SnO₂-Bi₂O₃ contact materials were found to be 62-75 HV and 52-63% IACS, respectively, which is related to the interfacial stability between the Ag matrix, the SnO₂ phase, and the Bi₂O₃ phase.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.563-567
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• 2011

We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.186-193
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• 2000

Effects of 1.0 mol% CoO addition on sintering and the electrical properties of ZnO-Bi2O3-Sb2O3(ZBS) varistor system with 3.0 mol% co-addition of Sb2O3 and Bi2O3 at various Sb/Bi ratio (0.5, 1.0, and 2.0) were investigated. Cobalt had little influence on the liquid-phase formation and the pyrochlore decomposition temepratures of ZBS, while densification was mainly dependent on Sb/Bi ratio: when Sb/Bi=0.5, excess Bi2O3 irrelevant to the formation of pyrochore(Zn2Sb3Bi3O14) forms eutectic liquid at ~75$0^{\circ}C$ which promotes densification and grain growth; with Sb/Bi=2.0, the second phase Zn7Sb2O12 formed by excess Sb2O3 irrelevant to the formation of the pyrochlore retards densification up to ~100$0^{\circ}C$. These phases caused the coarsening and uneven distribution of the second phase particles on the grain boundaries of ZnO above the pyrochlore decomposition temperature(~105$0^{\circ}C$), which led to broad size dist-ribution of ZnO; the specimen with Sb/Bi=1.0 showed homogeneous microstructure compared with the others, which enabled improved varistor characteristics. Doping of Co increased the nonlinearity and the potential barrier height of ZBS, which is thought to stem from improved sintering behavior such as homogenized microstructure due to size reduction and even distribution of the second phase and suppressed volatility of Bi2O3, as well as the improvement in the potential barrier structure via increased donor and interface electron trap densities.