• 제목/요약/키워드: Bi-2212

검색결과 198건 처리시간 0.022초

이온빔 스퍼터법으로 제작한 Bi 박막의 초전도 특성 (Superconducting Characteristics of Bi Thin Films Fabricated by Ion Beam Sputtering)

  • 이희갑;박용필;오금곤
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.222-225
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    • 2000
  • BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $Po_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$ (onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a smd amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in d of the obtained films.

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Sticking Coefficient in Bi-thin Film Prepared by IBS Method

  • Yang, Sung-Ho;Park, Yong-Pil;Chun, Min-Woo;Park, Sung-Gyun;Park, Woon-Shik
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.193-197
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    • 2000
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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Characteristics of HTS Tube Depending on Chemical Compositions

  • Jung, Seung-Ho;Jang, Guneik
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권1호
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    • pp.27-30
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    • 2003
  • The Bi2212 based HTS tubes with 4 different compositions, Bi:Sr:Ca:Cu = 2.0:2.0:1.0:2.0, 2.1:2.0:1.0:2.0,2.2:1.8:1.0:2.0 and 2.2:1.8.1.0.2:2 with 10% of SrSO$_4$ were studied. For tube fabrication the optimum range of melt temperatures and preheating temperature and time for mold were 105$0^{\circ}C$~110$0^{\circ}C$ and 55$0^{\circ}C$ for 30min respectively. The mold rotating speed was 1000rpm. Typical tube dimension was 30/24mm in outside/inside diameter and 60mm in length. A tube was annealed at 84$0^{\circ}C$ for 40 hours in oxygen atmosphere. The plate like grains more than 20${\mu}{\textrm}{m}$ were well developed along the rotating direction of mold regardless of initial chemical compositions. The specimen with Bi2212 composition exhibited $T_c$ of 83K while the specimen with other compositions are lower than 60K. The measured $I_c and J_c$ at 77K(B = 0T) in Bi2212 composition were about 80A and 266A/$\textrm{cm}^2$.

에피택시 성장으로 제작한 BSCCO 박막의 단결정 형성 (Single Crystal Formation of BSCCO Thin Films by Epitaxy Growth)

  • 천민우;양승호;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.671-674
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    • 2004
  • BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO3) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795 $^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785\;^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

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IBS법으로 제작한 BSCCO 박막의 상안정 영역 (BSCCO Thin Films Fabricated by ion Beam Sputtering Method)

  • 양승호;양동복;박용필
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2003년도 춘계종합학술대회
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    • pp.538-541
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    • 2003
  • BSCCO superconducting thin films have been fabricated by co-deposition using IBS(Ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cases, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and PO$_3$, and it was distributed in the rezone. The XRD peak of the generated film continuously changed according to the substrate temperature.

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공증착법으로 제작한 BSCCO 초전도 박막의 부착계수 해석 (Analysis of Sticking Coefficient in BSCCO Superconductor Thin Film Fabricated by Co-deposition)

  • 안인순;천민우;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.300-303
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    • 2001
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

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Evaluation of Sticking Coefficient in BSCCO Thin Film Fabricated by Co-sputtering

  • Lee, Hee-Kab;Park, Yong-Pil;Lee, Kwon-Hyun;Lee, Joon-Ung
    • 한국전기전자재료학회논문지
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    • 제13권1호
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    • pp.80-84
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    • 2000
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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The application of hydrated fine MgO particles for flux pinning center in the HTS-BSCCO system

  • 김성환;김철진;정준기;박성창;유재무
    • Progress in Superconductivity
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    • 제3권2호
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    • pp.188-192
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    • 2002
  • To introduce flux pinning center in HTS-BSCCO system, nano-size MgO particles were uniformly distributed within the Bi-2223 grain by partial hydration of MgO. The existing method MgO doped Bi-2223 used nato-size MgO powders, which resulted in agglomeration during mixing or grain growth during heat-treatment due to the high surface energy of the fine particles. By hydration of the MgO surface, the agglomeration of the MgO powders was avoided and the size of remaining MgO core was controlled by changing hydration medium and time. The thin film obtained by spin coating of (Bi_$1.8/Pb_{0.4}$)$Sr_2$$_{Ca}$$2.2/Cu_3$ $O_{y}$ nitrate solution mixed with hydrated MgO showed the even distribution of nano-size MgO particles in the Bi-2212 grains.s.s.

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공증착법으로 제작한 BSCCO 초전도 박막의 부착계수 해석 (Analysis of Sticking Coefficient in BSCCO Superconductor Thin Film Fabricated by Co-deposition)

  • 안인순;천민우;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.300-303
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    • 2001
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

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