• Title/Summary/Keyword: Beta voltaic

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Measurement of low energy beta radiation from Ni-63 by using peeled-off Gafchromic EBT3 film

  • Ji, Wanook;Kim, Jong-Bum;Kim, Jin-Joo
    • Nuclear Engineering and Technology
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    • 제54권10호
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    • pp.3811-3815
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    • 2022
  • Ni-63 is pure beta source which emits low energy beta particles. The Ni-63 sources were fabricated to develop the beta-voltaic battery which converts decay energy into electrical energy for power generation. Activity distribution of the source was important factor of power producibility of the beta-voltaic battery. Liquid scintillation counter widely used for measurement of low energy beta emitters was not suitable to measure activity distribution. In this study, we used the peeled-off Gafchromic™ EBT3 film to measure the activity distribution of the Ni-63 source. Absorbed dose was increased proportionally to the source activity and exposure duration. The low energy beta particles could transport the energy into the active layer without the polyester protective layer. Also, Activity distribution was measured by using the peeled-off EBT3 film. Two-dimensional dosimetric distribution was suitable to measure the activity distribution. To use the peeled-off EBT3 film is user-friendly and cost-effective method for quality assurance of the Ni-63 sources for the beta-voltaic battery.

63Ni in beta voltaic battery

  • Kim, Jin Joo;Uhm, Young Rang;Son, Kwang Jae
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2014년도 자성 및 자성재료 국제학술대회
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    • pp.176-176
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    • 2014
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베타전지용 PN 접합 반도체 표면에 도금된 Ni 후막의 특성 (Characteristics of Electroplated Ni Thick Film on the PN Junction Semiconductor for Beta-voltaic Battery)

  • 김진주;엄영랑;박근용;손광재
    • 방사선산업학회지
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    • 제8권3호
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    • pp.141-146
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    • 2014
  • Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a $^{63}Ni$ plating condition on the PN junction semiconductor needed for production of beta-voltaic battery. PN junction semiconductors with a Ni seed layer of 500 and $1000{\AA}$ were coated with Ni at current density from 10 to $50mA\;cm^{-2}$. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of $10mA\;cm^{-2}$ in seed layer with thickness of $500{\AA}$, $20mA\;cm^{-2}$ of $1000{\AA}$. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased.

63Ni 도금선원 및 베타 전지 제조 (Synthesis of Electroplated 63Ni Source and Betavoltaic Battery)

  • 엄영랑;유권모;최상무;김진주;손광재
    • 방사선산업학회지
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    • 제9권4호
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    • pp.167-170
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    • 2015
  • Radioisotope (Nuclear) battery using $^{63}Ni$ was prepared as beta cell. The electroplated $^{63}Ni$ on Ni foil is fabricated, and beta cell and photovoltaic hybrid battery was designed to use at both day and night in space project. A Ni-plating solution is prepared by dissolving metal particles including $^{62}Ni$ and $^{63}Ni$ from neutron irradiation of ($n,{\gamma}$). Electroplating solution of a chloride bath consists on nickel ions in HCl, $H_3BO_3$, and KOH. The deposition was carried out at current density of $10mA\;cm^{-2}$. The prepared beta source was attached on a PN junction and measured I-V properties. The power output at activity of 0.07 mCi and 0.45 mCi were 0.55 pW and 2.69 nW, respectively.

Towards effective indirect radioisotope energy converters with bright and radiation hard scintillators of (Gd,Y)3Al2Ga3O12 family

  • Korzhik, M.;Abashev, R.;Fedorov, A.;Dosovitskiy, G.;Gordienko, E.;Kamenskikh, I.;Kazlou, D.;Kuznecova, D.;Mechinsky, V.;Pustovarov, V.;Retivov, V.;Vasil'ev, A.
    • Nuclear Engineering and Technology
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    • 제54권7호
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    • pp.2579-2585
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    • 2022
  • Ceramics of quaternary garnets (Gd,Y)3Al2Ga3O12 doped with Ce, Tb have been fabricated and evaluated as prospective materials for indirect energy converters of α-and β-voltaic. Samples were characterized at excitation with an X-ray source and an intense 150 keV electron beam and showed good temperature stability of their emission and tolerance to irradiation. The role of X-rays accompanied the α-particle emitting in the increase of the conversion efficiency is clarified. The garnet-type structure of the matrix in the developed materials allows the production of quality crystalline mass with a light yield exceeding that of the commonly used YAG: Ce scintillator by a factor of two times.