• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Journal of Magnetics
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• v.9 no.1
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• pp.23-26
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• 2004

A magneto-current (MC) was investigated for magnetic tunnel transistor (MTT) with amorphous n-type Si film. A relative MC (more than 49.6%) was observed at an emitter-base bias voltage ($V_{EB}$) of 0.65 V at room temperature. Above a $V_{EB}$ of 0.70 V, however, a rapid decrease in MC was observed in the amorphous Si-based MTT. The collector current increasing and transfer ratio as emitter-base voltage were mainly due to the rapid creation electrons of conduction band states in the Si collector. This approach would make integration in various components and systems easier than a MTT grown on a semiconductor wafer.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.239-250
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• 2003

The reliability degradation phenomena in the SiGe hetero-junction bipolar transistor (HBT) are investigated in this review. In the case of the SiGe HBT the decrease of the current gain, the degradation of the AC characteristics, and the offset voltage are frequently observed, which are attributed to the emitter-base reverse bias voltage stress, the transient enhanced diffusion, and the deterioration of the base-collector junction due to the fluctuation in fabrication process, respectively. The reverse-bias stress on the emitter-base junction causes the recombination current to rise, increasing the base current and degrading the current gain, because hot carriers formed by the high electric field at the junction periphery generate charged traps at the silicon-oxide interface and within the oxide region. Because of the enhanced diffusion of the dopants in the intrinsic base induced by the extrinsic base implantation, the shorter distance between the emitter-base junction and the extrinsic base than a critical measure leads to the reduction of the cut-off frequency ($f_t$) of the device. If the energy of the extrinsic base implantation is insufficient, the turn-on voltage of the collector-base junction becomes low, in the result, the offset voltage appears on the current-voltage curve.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.3
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• pp.11-17
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• 1998

Although GaAs HBTs are very attractive for high power amplifier because of their power handling capablity, they can't be actively commercialized due to the degradation of current gain occured in hihg current operation. In this paper we analyzed the type of current gain degradation of GaAs HBTs under high constant current stress, and identified the mechanism by using two dimensional numerical simulation. The cause of degradation was found out to be the variation of surface recombination states at the interface between GaAs extrinstic base and the nitride passivating the surface of base. The energy radiated from recombination of carriers in bulk as well as near the surface is estimated to activate the change of the surface states.

• Journal of Welding and Joining
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• v.30 no.2
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• pp.76-80
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• 2012

In this study, the effect of the welding current on the hardness characteristics and microstructure in the resistance spot welding of 1GPa grade cold-rolled DP steel was investigated, Also, correlation between the hardness and microstructure was discussed. In spite of the change in the welding current, the hardness distributions near weld was similar. the hardness in the HAZ and the fusion zone was higher than that of the base metal and the hardness in the fusion zone was variated with the location. Especially, the hardness of HAZ adjacent to the base metal showed maximum value, and softening zone in the base metal adjacent to HAZ was found. With the increasing of welding current, there were no difference in maximum hardness and average hardness in the fusion zone were, but the hardness of the softening zone reduced. The difference in the hardness in each location of weld due to grain size of prior austenite. The softening of the base metal occurred by tempering of the martensite.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1371-1374
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• 1995

It is well known that the degradation of transformer oil conseqently lead to the failure of transformer. This paper discussed the characteristics of the degradation sensor checking transformer oil condition in live line. The degadation sensor is composed of base ring, electrodes and porous ceramic, passed through the transformer oil and checks the transformer oil condition through sensor's leakage current. So it is important to minimize the leakage current of base ring and connection parts. To investigate the leakage current of base ring and connection parts the characteristics of V-T-I and DC 2 KV and other examinations were performed. It is verified that ionized transformer oil caused by the expansion of temperature increases in the leakage current of porous ceramic sensor. It is certification that the leakage current of other parts of porous ceramic is very small(about 2%) compared with the porous ceramic body and it is confirmed that the leakage current in porous ceramic is changed sensitively according to the new oil(NO) and and the degradation oil(DO).

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1765-1768
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• 1996

It is well known that the degradation transformer oil is mainly effected to the failure of transformer. In this paper it is discussed the characteristics of the degradation sensor checking transformer oil condition in live line. The degadation sensor composed with base ring, electrodes and porous ceramic passed through the transformer oil and checked the transformer oil condition with sensor's leakage current. It is important to minimize the leakage current of base ring and connection parts. To investigate the leakage current of base ring and connection parts it is examined the characteristics of V-T-I and DC 2 KV and other examinations. It is verified that ionized transformer caused by the expansion of oil temperature increase in the leakage current of porous ceramic sensor. It is certificated that the leakage current of other parts of porous ceramic is very small (about 2 %) than the porous ceramic and it is confirmed that the leakage current in porous ceramic is changed sensitively according to the new oil(NO) and and the degradation oil(DO).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.840-843
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• 2001

In this study, temperature dependency of current gain for AlGaAs/GaAs/GaAs HBT is analytically proposed over the temperature range between 300K and 600K. Energy bandgap, effective mass, intrinsic carrier concentration are considered as temperature dependent parameters. Collector current which is numerically calculated is then analytically expressed to enhance the speed of calculation for current gain. From the results, current gain decreases as the temperature increases. These results will be used to expect the unity current gain frequency f$_{T}$ in conjunction with emitter-base and collector- base capacitances.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.67-70
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• 2000

In this paper, all SCR recombination currents including setback and graded layer's recombination currents are analytically introduced for the first time. Different emitter-base structures are tested to prove the validity of the model. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. In this paper, recombination current model included setback layer and graded layer is proposed. New recombination current model also includes abrupt heterojunction's recombination current model. In this paper, new recombination current model analytically explains effects of setback layer and graded layer.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.229-237
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• 2005

The degradation phenomena in SiGe hetero-junction bipolar transistors(SiGe HBTs) induced by bias stress are investigated in this review. If SiGe HBTs are stressed over a specific time interval, the device parameters deviate from their nominal values due to the internal changes in the devices. Reverse-bias stress on emitter-base(EB) junctions causes base current increase and current gain decrease because carriers accelerated by the electrical field generate recombination centers. When forward-bias current stress is conducted at an ambient temperature above $140^{\circ}C$ , hot carriers produced by Auger recombination or avalanche multiplication induce current gain fluctuation. Mixed-mode stressing, where high emitter current and high collector-base voltage are simultaneously applied to the device, provokes base current rise as EB reverse-bias stressing does.