• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• ETRI Journal
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• v.38 no.2
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.23 no.2
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• pp.67-74
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• 2017

In this work, the effects of nano $TiO_2$ on functionality and stability of low density polyethylene (LDPE) composite films were investigated for food packaging application. LDPE-nano $TiO_2$ composite films were prepared with various $TiO_2$ contents (0, 0.5, 1.0, 3.0 and 5.0wt%) by melt-extrusion and their basic properties such as crystallinity, chemical bonds and surface morphology were examined by XRD, FTIR and SEM. Ultraviolet (UV) light barrier property of as-prepared LDPE-nano $TiO_2$ composite films was also studied and the presence of nano $TiO_2$ resulted in significant improvement of UV light barrier compared to the pure LDPE film. To evaluate influence of nano $TiO_2$ on LDPE properties required as packaging material, thermal, mechanical, gas barrier and optical properties of LDPE-nano $TiO_2$ composite films were characterized with various analytical techniques including TGA, UTM, OTR, WVTR and UV-vis spectroscopy. As a result, except optical property of LDPE, no significant effects were found in other properties. Opacity of pure LDPE was greatly increased with increasing concentration of nano $TiO_2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.7-15
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• 2015

We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.

• Composites Research
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• v.35 no.3
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• pp.121-126
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• 2022

Owing to advantages of polymeric materials for hydrogen tank liner like light-weight property and high specific strength, polymer based composites have gained much attention. Despite of many benefits, polymeric materials for fuel cell tank cause problems which is critical to applications as low gas barrier property, and poor processability when adding fillers. For these reasons, improving gas barrier property of polymer composites is required to study for expanding application fields. This work presents impermeable polymer nanocomposites by introducing thin barrier coating using layer by layer (LBL) deposition method. Also, bi-layered and quad-layered nanocomposites were fabricated and compared for identifying relationship between deposition step and gas barrier property. Reduction in gas permeability was observed without interrupting mechanical property and processability. It is discussed that proper coating conditions were suggested when different coating materials and deposition steps were applied. We investigated morphology, gas barrier property and mechanical properties of fabricated nanocomposites by FE-SEM, Oxygen permeation analyzer, UTM, respectively. In addition, we revealed the mechanism of barrier performance of LBL coating using materials which have high aspect ratio.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.13 no.1
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• pp.9-18
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• 2007

Nanocomposite has been considered as an emerging technology in developing a novel food packaging materials. Polymer nanocomposites exhibit markedly improved packaging properties due to their nanometer size dispersion. These improvements include increased barrier properties pertaining to gases such as oxygen, carbon dioxide, and water vapor, as well as to UV rays, and increased mechanical properties such as strength, stiffness, dimensional stability, and heat resistance. Additionally, biologically active ingredients can be added to impart the desired functional properties to the resulting packaging materials. New packaging materials created with this technology demonstrate an increased shelf life with maintaining high quality of the product. Nanotechnology offers big benefits for packaging. Nanocomposite technology paves the way for packaging innovation in the flexible and rigid packaging applications, offering enhanced properties such as greater barrier protection, increased shelf life and lighter-weight materials.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1191-1198
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• 2023

Bentonite buffer material is a critical component in an engineered barrier system (EBS) for disposing high-level radioactive waste (HLW). The bentonite buffer material protects the disposal canister from groundwater penetration and releases decay heat to the surrounding rock mass; thus, it should possess high thermal conductivity, low hydraulic conductivity, and moderate swelling pressure to safely dispose the HLWs. Bentonite clay is a suitable buffer material because it satisfies the safety criteria. Several additives have been suggested as mixtures with bentonite to increase the thermal-hydraulic-mechanical-chemical (THMC) properties of bentonite buffer materials. Therefore, this study investigated the geotechnical, mineralogical, and THMC properties of several candidate additives such as sand, graphite, granite, and SiC powders. Datasets obtained in this study can be used to select adequate additives to improve the THMC properties of the buffer material.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1275-1281
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• 1997

ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.823-826
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• 2008

Phosphate glass added the various alkali additives is one of the substitutive materials for the barrier-ribs in plasma display panel. The results of differential thermal analysis and coefficient of thermal expansion show that the alkali oxides affect the thermal properties of phosphate glass.